INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Lead-Free Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 50 khz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 50W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 khz) Absolute Maximum Ratings PD - 94924 IRG4PC30WPbF Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I C @ T C = 25 C Continuous Collector Current 23 I C @ T C = 0 C Continuous Collector Current 2 A I CM Pulsed Collector Current 92 I LM Clamped Inductive Load Current 92 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 80 mj P D @ T C = 25 C Maximum Power Dissipation 0 P D @ T C = 0 C Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance G C E n-channel TO-247AC V CES = 600V V CE(on) max. = 2.70V @, 2A Parameter Typ. Max. Units R θjc Junction-to-Case.2 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) www.irf.com 2/30/03
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V,.0A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.34 V/ C V GE = 0V,.0mA 2. 2.7 2A V CE(ON) Collector-to-Emitter Saturation Voltage 2.45 23A See Fig.2, 5 V.95 2A, T J = 50 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, 250µA g fe Forward Transconductance 6 S V CE = 0 V, 2A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 5 76 2A Q ge Gate - Emitter Charge (turn-on) 7.6 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 8 27 t d(on) Turn-On Delay Time 25 t r Rise Time 6 T J = 25 C ns t d(off) Turn-Off Delay Time 99 50 2A, V CC = 480V t f Fall Time 67 0, R G = 23Ω E on Turn-On Switching Loss 3 Energy losses include "tail" E off Turn-Off Switching Loss 3 mj See Fig.,, 3, 4 E ts Total Switching Loss 0.26 0.35 t d(on) Turn-On Delay Time 24 T J = 50 C, t r Rise Time 7 2A, V CC = 480V ns t d(off) Turn-Off Delay Time 50, R G = 23Ω t f Fall Time 50 Energy losses include "tail" E ts Total Switching Loss 0.55 mj See Fig. 3, 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 980 V GE = 0V C oes Output Capacitance 7 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 8 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor %. Pulse width 5.0µs, single shot. 2 www.irf.com
Load Current ( A ) 40 30 20 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Power Dissipation = 24W Triangular wave: Clamp voltage: 80% of rated Ideal diodes 0 A 0 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) 0 0 I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C V CC = 50V 5µs PULSE WIDTH 5.0 6.0 7.0 8.0 9.0.0.0 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current (A 25 20 5 5 V GE = 5V V CE, Collector-to-Emitter Voltage(V) 3.0 2.5 2.0 80 us PULSE WIDTH 24 A 2 A 6 A 0 A 25 50 75 0 25 50 T, Case Temperature ( C) C.5-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) D = 0.50 0.20 0. 0.05 0.02 t2 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 0.0 2. Peak T J= PDM x Z thjc + TC 0.0000 0.000 0.00 0.0 t, Rectangular Pulse Duration (sec) PDM t Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 2000 500 00 500 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V CC = 400V 2A 0 0 V CE, Collector-to-Emitter Voltage (V) 0 0 20 30 40 50 60 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.5 0.4 0.3 0.2 V CC = 480V T = 25 J C 2A Total Switching Losses (mj) R G = Ohm 23Ω V CC = 480V 24 A 2 A 6 A 0.0 0 20 30 40 50 R GR, G Gate, Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance 0.0-60 -40-20 0 20 40 60 80 0 20 40 60 T J, Junction Temperature ( C ) Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj).5.0 0.5 R G = Ohm 23Ω T J = 50 C V CC = 480V I, Collector-to-Emitter Current (A) C 00 0 V GE = 20V T = 25 C J SAFE OPERATING AREA 0.0 0 5 5 20 25 30 I C, Collector-to-emitter Current (A) 0 00 V, Collector-to-Emitter Voltage (V) CE Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.com
50V c 00V L V * C D.U.T. d 0-480V 480µF 960V R L = 480V 4 X I C @25 C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 00V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V c d 90% e % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) www.irf.com 7
TO-247AC Package Outline Dimensions are shown in millimeters (inches) 5.90 (.626) 5.30 (.602) - B - 3.65 (.43) 3.55 (.40) 0.25 (.0) M - A - 5.50 (.27) D B M - D - 5.30 (.209) 4.70 (.85) 2.50 (.089).50 (.059) 4 20.30 (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 2 3.40 (.056) 3X.00 (.039) 0.25 (.0) M C A S 3.40 (.33) 3.00 (.8) 2X - C - 4.30 (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) NOTES: 0.80 (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) DIMENSIONING & TOLERANCING PER ANSI Y4.5M, 982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. LEAD ASSIGNMENTS Hexfet IGBT LEAD ASSIGNMENTS - Gate - Gate 2 - Drain - GATE2 - Collector 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - DRAIN4 - Collector TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFPE30 035H 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.2/03 8 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/