SMK0990FD Advanced N-Ch Power MOSFET

Similar documents
SMK1360FD Advanced N-Ch Power MOSFET

SMN630LD Logic Level N-Ch Power MOSFET

SMN01L20Q Logic Level N-Ch Power MOSFET

SMK0460IS Advanced N-Ch Power MOSFET

Features. Information I-PAK G D S. Marking. Part Number. Package. I-PAK (Short Lead) SMK0160. Unit. V Gate-source voltage T c =25 C I D I DM

Features. Information SOT-223. Part Number. Marking. Package SOT-223 SNN01Z60. Unit. V Gate-source voltage A A I DM T c =25 C I D.

Advanced Power Electronics Corp.

N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

TO-220 TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 7N65 SW7N65 TO-220 TUBE 2 SW F 7N65 SW7N65 TO-220F TUBE

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET

GP2M020A050H GP2M020A050F

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

TO-220SF. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW MN 12N65DA SW12N65DA TO-220SF TUBE. Symbol Parameter Value Unit

UNISONIC TECHNOLOGIES CO., LTD

GP1M018A020CG GP1M018A020PG

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

UNISONIC TECHNOLOGIES CO., LTD UFC8N80K

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET

HFI50N06A / HFW50N06A 60V N-Channel MOSFET

TO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit

AP2530GY-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp.

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET

GP2M005A050CG GP2M005A050PG

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

D1/D2 S1 G1 S2 G2 TO-252-4L

SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω

Dual N-channel Enhancement-mode Power MOSFETs

HFP4N65F / HFS4N65F 650V N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD

Value TO220 TO220F TO251N TO252 TO262 TO220SF V DSS Drain to source voltage 650 V

Preliminary TSM9N50 500V N-Channel Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

T C =25 unless otherwise specified

HGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS

Features V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit

UNISONIC TECHNOLOGIES CO., LTD

HRLD150N10K / HRLU150N10K 100V N-Channel Trench MOSFET

UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ

UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2

TO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET

SSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET

Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D

AP6900GSM-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp.

TSM3N90 900V N-Channel Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET

MMD65R900Q 650V 0.90Ω N-channel MOSFET

MDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω

MDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω

HCD6N70S / HCU6N70S 700V N-Channel Super Junction MOSFET

TO-92. Item Sales Type Marking Package Packaging 1 SWC 2N40D SW2N40D TO-92 TAPE 2 SW SA 2N40D SW2N40D SOT-223 REEL

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT18P10

TO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE

N-Channel Power MOSFET 500V, 9A, 0.9Ω

UNISONIC TECHNOLOGIES CO., LTD

HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET

G2 S2 S1 G1 SO-8. Symbol Parameter V ±20 ±20 V A A A 2.0 W Linear Derating Factor W/ C Storage Temperature Range

UNISONIC TECHNOLOGIES CO., LTD

N-Channel Power MOSFET 600V, 11A, 0.38Ω

N-Channel Power MOSFET 800V, 0.3A, 21.6Ω

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UTT50P04

P2G N2D/P2D P1S/P2S P1G N2G N1S N2S SO-8 N1G N1D/P1D. Symbol Parameter

MDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω

N-Channel Power MOSFET 100V, 160A, 5.5mΩ

UNISONIC TECHNOLOGIES CO., LTD

TO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc

UNISONIC TECHNOLOGIES CO., LTD

AOD436 N-Channel Enhancement Mode Field Effect Transistor

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V

TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE

Product Summery. Applications

Operating Junction and 55 to +175 C Storage Temperature Range

AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

UNISONIC TECHNOLOGIES CO., LTD UTD408

N-Channel Power MOSFET 100V, 81A, 10mΩ

N-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..

UNISONIC TECHNOLOGIES CO., LTD

MDP15N60G / MDF15N60G N-Channel MOSFET 600V, 15A, 0.40Ω

HCI70R500E 700V N-Channel Super Junction MOSFET

TSF18N60MR TSF18N60MR. 600V N-Channel MOSFET. Features. Absolute Maximum Ratings. Thermal Resistance Characteristics

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

SSF6014D 60V N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD

MDF10N60G N-Channel MOSFET 600V, 10A, 0.7Ω

N-Channel Power MOSFET 900V, 4A, 4.0Ω

Transcription:

z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω (Max.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package G D S SMK0990FD SMK0990 TO-220F-3L TO-220F-3L Marking Information AUK AUK YMDD ΔYMDD SMK0990 SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) YMDD -. : Management Code (H: Halogen Free) -. : Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (T C =25 C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 900 V Gate-source voltage V GSS 30 V Drain current (DC) * I D T c =25 C 9 A T c =100 C 5.7 A Drain current (Pulsed) * I DM 36 A Single pulsed avalanche energy (Note 2) E AS 900 mj Repetitive avalanche current (Note 1) I AR 9 A Repetitive avalanche energy (Note 1) E AR 4.8 mj Power dissipation P D 48 W Junction temperature T J 150 C Storage temperature range T stg -55~150 C * Limited only maximum junction temperature 1 of 9

Thermal Characteristics SMK0990FD Characteristic Symbol Rating Unit Thermal resistance, junction to case R th(j-c) Max. 2.6 Thermal resistance, junction to ambient R th(j-a) Max. 62.5 C/W Electrical Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS I D =250uA, V GS =0 900 - - V Gate threshold voltage V GS(th) I D =250uA, V DS =V GS 3-5 V Drain-source cut-off current I DSS V DS =900V, V GS =0V - - 1 ua V DS =720V, T c =125 C - - 100 ua Gate leakage current I GSS V DS =0V, V GS = 30V - - 100 na Drain-source on-resistance R DS(ON) V GS =10V, I D =4.5A - 1.2 1.4 Forward transfer conductance (Note 3) g fs V DS =10V, I D =4.5A - 9.2 - S Input capacitance C iss - 2100 - Output capacitance C oss V DS =25V, V GS =0V, f=1.0mhz - 175 - Reverse transfer capacitance C rss - 14 - Turn-on delay time (Note 3,4) t d(on) - 50 - Rise time (Note 3,4) t r V DD =450V, I D =9A, - 120 - Turn-off delay time (Note 3,4) t d(off) R G =25Ω - 100 - Fall time (Note 3,4) t f - 75 - (Note 3,4) Q g Total gate charge - 52 68 Gate-source charge (Note 3,4) Q gs V DS =720V, V GS =10V, I D =9A - 16 - Gate-drain charge (Note 3,4) Q gd - 20 - pf ns nc Source-Drain Diode Ratings and Characteristics (T C =25 C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode - - 9 A Source current (Pulsed) I SM in the MOSFET - - 36 A Forward voltage V SD V GS =0V, I S =9A - - 1.4 V Reverse recovery time (Note 3,4) t rr I S =9A, V GS =0V - 550 - ns Reverse recovery charge (Note 3,4) Q rr di F /dt=100a/us - 6.5 - uc Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=21mH, I AS =9A, V DD =50V, R G =25, Starting T J =25 C 3. Pulse test: Pulse width 300us, Duty cycle 2% 4. Essentially independent of operating temperature typical characteristics 2 of 9

Typical Characteristics Curve SMK0990FD Fig. 1 I D - V DS Fig. 2 I D V GS Fig. 3 R DS(ON) - I D Fig. 4 I S - V SD Fig. 5 Capacitance - V DS Fig. 6 V GS - Q G 3 of 9

SMK0990FD Typical Characteristics Curve (Continue) Fig. 7 BV DSS - T J Fig. 8 R DS(ON) - T J Fig. 9 I D - T C Fig. 10 Safe Operating Area Fig. 11 Transient Thermal Impedance 4 of 9

Fig. 12 Gate Charge Test Circuit & Waveform SMK0990FD Fig. 13 Resistive Switching Test Circuit & Waveform Fig. 14 E AS Test Circuit & Waveform 5 of 9

SMK0990FD Fig. 15 Diode Reverse Recovery Time Test Circuit & Waveform 6 of 9

SMK0990FD Package Outline Dimensions 7 of 9

SMK0990FD The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. 8 of 9

9 of 9