P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC TO-263 S DRAIN connected to TAB G G D S Top View SUP65P4-5 G D S Top View SUB65P4-5 D Ordering Information: SUP65P4-5-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS - 4 V Gate-Source Voltage V GS ± 2 T C = 25 C - 65 Continuous Drain Current (T J = 75 C) I D T C = 25 C - 37 A Pulsed Drain Current I DM - 24 Avalanche Current I AR - 6 Repetitive Avalanche Energy a L =. mh E AR 8 mj T C = 25 C (TO-22AB and TO-263) 2 c Power Dissipation P D W T A = 25 C (TO-263) b 3.75 Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263) b R thja 4 Free Air (TO-22AB) R thja 62.5 C/W Junction-to-Case R thjc.25 Notes: a. Duty cycle %. b. When mounted on " square PCB (FR-4 material). c. See SOA curve for voltage derating. Document Number: 774 S-238-Rev. B, 2-Nov- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUP/SUB65P4-5 SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µa - 4 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µa - - 3 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na Zero Gate Voltage Drain Current I DSS V DS = - 4 V, V GS = V, T J = 25 C - 5 µa V DS = - 4 V, V GS = V - V DS = - 4 V, V GS = V, T J = 75 C - 25 On-State Drain Current a I D(on) V DS = - 5 V, V GS = - V - 2 A Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = - V, I D = - 3 A.2.5 V GS = - V, I D = - 3 A, T J = 25 C Drain-Source On-State Resistance a.24 R DS(on) Ω V GS = - V, I D = - 3 A, T J = 75 C.3 V GS = - 4.5 V, I D = - 2 A.8.23 Forward Transconductance a g fs V DS = - 5 V, I D = - 5 A 2 S Dynamic b Total Gate Charge c Q g Input Capacitance C iss 54 Output Capacitance C oss V GS = V, V DS = - 25 V, f = MHz 64 Reverse Transfer Capacitance C rss 3 85 3 Gate-Source Charge c Q gs V DS = - 2 V, V GS = - V, I D = - 65 A 25 Gate-Drain Charge c Q gd 5 Turn-On Delay Time c t d(on) 5 25 Rise Time c t r V DD = - 2 V, R L =.3 Ω 38 58 Turn-Off Delay Time c t d(off) I D - 65 A, V GEN = - V, R G = 2.5 Ω 75 5 Fall Time c t f 4 2 Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I S - 65 Pulsed Current I SM - 24 A Forward Voltage a V SD I F = - 65 A, V GS = V -.2 -.5 V Reverse Recovery Time t rr 4 8 ns Peak Reverse Recovery Charge I RM(REC) I F = - 65 A, di/dt = A/µs 2 4 A Reverse Recovery Charge Q rr.4. µc pf nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Document Number: 774 S-238-Rev. B, 2-Nov- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUP/SUB65P4-5 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 25 2 V GS = thru 7 V 6 V 8 5 5 V 6 4 T C = 25 C 5 4 V 2 25 C 3 V, 2 V 2 4 6 8-55 C 2 3 4 5 6 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8.4 - Transconductance (S) g fs 6 4 2 T C = - 55 C 25 C 25 C R DS(on).3.2. V GS = 4.5 V V GS = V 2 4 6 8 Transconductance 2 4 6 8 2 On-Resistance vs. Drain Current 8 2 C - Capacitance (pf) 6 4 2 C oss C rss C iss - Gate-to-Source Voltage (V) V GS 6 2 8 4 V DS = 2 V I D = 65 A 6 2 8 24 3 V DS - Drain-to-Source Voltage (V) Capacitance 4 8 2 6 Q g - Total Gate Charge (nc) Gate Charge Document Number: 774 S-238-Rev. B, 2-Nov- 3 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUP/SUB65P4-5 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) (Normalized) - On-Resistance R DS(on) 2..5..5 V GS = V I D = 3 A - Source Current (A) I S T J = 5 C T J = 25 C - 5-25 25 5 75 25 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.3.6.9.2 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 I AV (A) at T A = 25 C 55 I D = 25 µa (a) I Dav I AV (A) at T A = 5 C V DS (V) 5 45 4...... t in (s) Avalanche Current vs. Time 35-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature 4 Document Number: 774 S-238-Rev. B, 2-Nov- THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SUP/SUB65P4-5 THERMAL RATINGS 75 6 45 3 5 - Drain Current (A) I D Limited by R DS(on)* T C = 25 C Single Pulse µs µs ms ms ms DC 25 5 75 25 5 75 T C - Case Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temperature.. V DS - Drain-to-Source Voltage (V) *V GS > minimum V GS at which R DS(on) is specified Safe Operating Area 2 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse Notes: P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 62.5 C/W 3. T JM - T A = P DM Z (t) thja 4. Surface Mounted. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?774. Document Number: 774 S-238-Rev. B, 2-Nov- 5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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