GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. PIN CONFIGURATION TO-220F Top View TO-3P/T-O247 Top View FEATURES Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits I DSS and V DS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware SYMBOL D GATE DRAIN SOURCE GATE DRAIN SOURCE G 1 2 3 1 2 3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Drain to Current - Continuous - Pulsed Rating Symbol Value Unit Gate-to-Source Voltage - Continue V GS ±30 V Total Power Dissipation TO220FP TO3P TO247 Derate above 25 TO220FP TO3P TO247 I D I DM 18 54 P D 52 Operating and Storage Temperature Range T J, T STG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy - T J = 25 (V DD = 100V, V GS = 10V, I L = 16A, L = 10mH, R G = 25Ω) Thermal Resistance - Junction to Case -TO220FP - Junction to Case -TO3P - Junction to Case -TO247 - Junction to Ambient - Junction to Ambient -TO220FP -TO3P,TO247 230 198 0.4 1.9 1.6 A W W/ E AS 1280 mj Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T L 260 ESD SENSITIVITY - HBM, C=100pF, R=1.5kΩ Vesd 2000 V (1) Drain current limited by maximum junction temperature θ JC θ JA 3.4 0.52 0.74 62.5 40 /W 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 1
ORDERING INFORMATION Part Number GPT18N50GN3P* GPT18N50GN247* GPT18N50DGN220FP* *Note: G : Suffix for PB Free Product Package TO-3P TO-247 TO-220F ELECTRICAL CHARACTERISTICS Unless otherwise specified, T J = 25. GP18N50 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (V GS = 0 V, I D = 250 μa) V (BR)DSS 500 V Drain-Source Leakage Current (V DS = 500 V, V GS = 0 V) I DSS 1 ua Gate-Source Leakage Current-Forward (V gsf = 30 V, V DS = 0 V) I GSSF 100 na Gate-Source Leakage Current-Reverse (V gsr = 30 V, V DS = 0 V) I GSSR 100 na Gate Threshold Voltage (V DS = V GS, I D = 250 μa) V GS(th) 3 5 V Static Drain-Source On-Resistance (V GS = 10 V, I D = 9A) * R DS(on) 0.27 Ω Forward Transconductance (V DS = 50 V, I D = 9A) * g FS 18 S Input Capacitance C iss 2807.8 pf (V DS = 25 V, V GS = 0 V, Output Capacitance C oss 275.2 pf f = 1.0 MHz) Reverse Transfer Capacitance C rss 19.2 pf Turn-On Delay Time t d(on) 36 ns Rise Time (V DD = 250 V, I D = 18 A, t r 69.3 ns Turn-Off Delay Time R G = 25Ω) * t d(off) 100 ns Fall Time t f 42.6 ns Total Gate Charge Q g 60 nc (V DS = 400 V, I D = 18 A, Gate-Source Charge Q gs 13.4 nc V GS = 10 V)* Gate-Drain Charge Q gd 22.7 nc SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) V SD 1.5 V (I S = 18 A, Forward Turn-On Time t on ** ns d IS/d t = 100A/µs) Reverse Recovery Time t rr 480 ns * Pulse Test: Pulse Width 300µs, Duty Cycle 2% ** Negligible, Dominated by circuit inductance 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 2
TYPICAL ELECTRICAL CHARACTERISTICS 3.4 1.2 3 2.6 Rdson (Norm alized) 2.2 1.8 1.4 1 BVD (Norm alized) 1 0.6 0.2-50 -25 0 25 50 75 100 125 150 0.8-50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) TJ, Junction Temperature (C) Fig 1. On-Resistance Variation with vs. Temperature Fig.2 Breakdown Voltage Variation vs. Temperature ID, Drain -to -Source current [A ] 100 10 1 10V 8V 6.5V 5.5V 5V 20us PULSE WIDTH TJ=25C 25C 150C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage [V] Fig 3. Typical Output Characteristics Fig 4. Typical Transfer Characteristics 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 3
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 4
PACKAGE DIMENSION TO-220F 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 5
TO-3P 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 6
TO-247 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 7
IMPORTANT NOTICE Great Power Microelectronic Corporation (GP) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. GP integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of GP products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer s applications, the customer should provide adequate design and operating safeguards. 虹冠電子工業股份有限公司 Champion Microelectronic Corporation Web:http://www.champion-micro.com/ 臺灣 新北市汐止區新台五路一段 96 號 21F 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan, R.O.C. T E L : +886-2-2696 3558 F A X : +886-2-2696 3559 2013/6/26 Rev1.6 Champion Microelectronic Corp. Page 8