V A.65Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. G S ISOTOP D S SOT-227 "UL Recognized" Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS D Increased Power Dissipation Easier To Drive G Popular SOT-227 Package S All Ratings: T C = 25 C unless otherwise specified. Symbol Parameter S Drain-Source Voltage Continuous Drain Current @ T C = 25 C M Pulsed Drain Current 1 Gate-Source Voltage Continuous M Gate-Source Voltage Transient Total Power Dissipation @ T C = 25 C P D Linear Derating Factor,T STG Operating and Storage Junction Temperature Range T L Lead Temperature:.63" from Case for 1 Sec. I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR Repetitive Avalanche Energy 1 E AS Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS ± ± 52 4.16-55 to 1 Watts W/ C C mj Symbol Characteristic / Test Conditions BS Drain-Source Breakdown Voltage ( = V, = 2µA) R DS(on) Drain-Source On-State Resistance 2 ( = 1V, 29A) SS I GSS (th) Zero Gate Voltage Drain Current ( = V, = V) Zero Gate Voltage Drain Current ( = V, = V, T C = 125 C) Gate-Source Leakage Current ( = ±V, = V) Gate Threshold Voltage ( =, = 2.5mA).65 ± 3 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µa na -719 Rev D 12-23
DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate-Drain ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time E on Turn-on Switching Energy 6 E off Turn-off Switching Energy E on Turn-on Switching Energy 6 E off Turn-off Switching Energy Test Conditions = V = 25V f = 1 MHz = 1V = 2V = 67A @ 25 C RESISTIVE SWITCHING = 2V = 67A @ 25 C R G =.6Ω INDUCTIVE SWITCHING @ 25 C = 333V, = 67A, R G = 3Ω INDUCTIVE SWITCHING @ 125 C = 333V, = 67A, R G = 3Ω 71 139 pf 87 141 nc 7 12 28 29 ns 135 845 1556 µj 113 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I Pulsed Source Current 1 SM (Body Diode) V Diode Forward Voltage 2 SD ( = V, I S = -67A) t rr Reverse Recovery Time (I S = -67A, dl S /dt = A/µs) Q rr Reverse Recovery Charge (I S = -67A, dl S /dt = A/µs) dv / Peak Diode Recovery dv / 5 dt dt THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case R θja Junction to Ambient 1.3 68 17. 8.24 ns µc V/ns C/W 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 38 µs, Duty Cycle < 2% 3 See MIL-STD-7 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 4 Starting T j = +25 C, L = 1.78mH, R G = 25Ω, Peak I L = A 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S -A di / dt 7A/µs V R V 1 C 6 Eon includes diode reverse recovery. See figures 18, 2..25-719 Rev D 12-23 Z θjc, THERMAL IMPEDANCE ( C/W).2.15.1.5.9.7.5.3.1.5 SINGLE PULSE Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C 1-5 1-4 1-3 1-2 1-1 1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves Junction temp. ( C) R DS (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Power (Watts) Case temperature 18 16 1 12 8 6 (TH), THRESHOLD VOLTAGE BS, DRAIN-TO-SOURCE BREAKDOWN R DS (ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAGE (NORMALIZED) 6 6V 2 5.5V 5V 5 1 15 2 25 FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS T =2V J = +25 C.9 2 = -55 C.8 1 2 3 4 5 6 7 8 9 1 2 6 7, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS (ON) vs DRAIN CURRENT 6 2 1 25 75 125 1.85 - -25 25 75 125 1 T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 2. 1.5 1..5 RC MODEL.528.651.123 > (ON) x R DS (ON)MAX. 2µSEC. PULSE TEST @ <.5 % DUTY CYCLE = +125 C.23F.173F.49F FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL I = 29A D V = 1. - -25 25 75 125 1.6 - -25 25 75 125 1, JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 18 16 1 12 8 1.4 1.3 1.2 1.1 1. 1.15 1.1 1.5 1..95.9 1.2 1.1 1..9.8.7 15 &1V NORMALIZED TO = 1V @ 29A 8V 7V =1V 6.5V -719 Rev D 12-23
, -719 Rev D 12-23, GATE-TO-SOURCE VOLTAGE (VOLTS) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns) 1 Crss T C =+25 C 1mS =+1 C SINGLE PULSE 1 1 1 1 1 2 FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 16 12 8 4 OPERATION HERE LIMITED BY R DS (ON) = 67A =V =2V =V µs 1mS 8 12 16 2 1.3.5.7.9 1.1 1.3 1.5 Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 8 16 7 6 2 1 2 2 1 t d(on) t d(off) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 1, 1, 2 1 =+1 C L = µh =+25 C 1 7 9 11 1 7 9 11 (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT L = µh L = µh E ON includes diode reverse recovery. E off E on 1 7 9 11 5 1 15 2 25 35 45 (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) 1 12 8 6 2 2 I = 67A D L = µh E ON includes diode reverse recovery. E on t r t f E off Ciss Coss
Typical Performance Curves 9% 1 % Gate Voltage = 125 C Gate Voltage = 125 C t d(on) t d(off) t r 9% Drain Current Drain Voltage 9% Switching Energy 1 % 5 % Drain Voltage Switching Energy 1% t f Drain Current Figure 18, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT6DF6 I C V CE G D.U.T. Figure 2, Inductive Switching Test Circuit SOT-227 (ISOTOP ) Package Outline 31.5 (1.2) 31.7 (1.248) 7.8 (.7) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48) 8.9 (.3) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.157) (2 places) 4. (.157) 4.2 (.165) (2 places) 25.2 (.992).75 (.) 12.6 (.496) 25.4 (1.).85 (.33) 12.8 (.4) 3.3 (.129) 3.6 (.143) 1.95 (.77) 2.14 (.84) 14.9 (.7) * Source Drain 15.1 (.594).1 (1.185) * Source terminals are shorted.3 (1.193) internally. Current handling 38. (1.496) capability is equal for either 38.2 (1.4) Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP is a Registered Trademark of SGS Thomson. APT s products are covered by one or more of U.S.patents 4,895,81 5,45,93 5,89,434 5,182,234 5,19,522 5,262,336 6,3,786 5,256,3 4,748,13 5,283,22 5,231,474 5,434,95 5,528, and foreign patents. US and Foreign patents pending. All Rights Reserved. -719 Rev D 12-23