DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MD Supersedes data of 996 May 4 File under Discrete Semiconductors, SC 996 Sep 9
FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability Available in ammo-pack. DESCRIPTION Cavity free cylindrical SOD9 glass package through Implotec () technology. This package is k hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. () Implotec is a trademark of Philips. a MAM96 Fig. Simplified outline (SOD9) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 4). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage BYD7A 5 V BYD7B V BYD7C 5 V BYD7D V BYD7E 5 V BYD7F V BYD7G 4 V V R continuous reverse voltage BYD7A 5 V BYD7B V BYD7C 5 V BYD7D V BYD7E 5 V BYD7F V BYD7G 4 V I F(AV) average forward current T tp =55 C; lead length = mm; see Figs and ;.56 A averaged over any ms period;.54 A see also Figs and I F(AV) average forward current T amb =6 C; PCB mounting (see Fig.6); see Figs 4 and 5;.4 A averaged over any ms period;.4 A see also Figs and FOR REPLACEMENT TYPE SEE INDEX SECTION OF HANDBOOK SC 996 Sep 9 Not recommended for new designs
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I FRM repetitive peak forward current T tp =55 C; see Figs 6 and 7 4.7 A 5. A I FRM repetitive peak forward current T amb =6 C; see Figs 8 and 9.7 A.9 A I FSM non-repetitive peak forward current t = ms half sine wave; T j =T j max prior to surge; V R =V RRMmax 7 A P RSM non-repetitive peak reverse power dissipation t=µs half sine wave; T j =T j max prior to surge 5 W 5 W T stg storage temperature 65 +75 C T j junction temperature 65 +75 C ELECTRICAL CHARACTERISTICS T j =5 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F forward voltage I F =.5 A; T j =T j max ; see Figs and.84 V.9 V V F forward voltage I F =.5 A; see Figs and.5 V. V V (BR)R reverse avalanche breakdown voltage I R =. ma BYD7A 55 V BYD7B V BYD7C 65 V BYD7D V BYD7E 75 V BYD7F V BYD7G 44 V I R reverse current V R =V RRMmax ; µa see Fig 4 V R =V RRMmax ; 75 µa T j = 65 C; see Fig 4 t rr reverse recovery time when switched from I F =.5 A to I R =A; 5 ns measured at I R = 5 A 5 ns see Fig 8 996 Sep 9 Not recommended for new designs
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C d diode capacitance f = MHz; V R =V; see Fig.5 5 pf pf di R -------- dt maximum slope of reverse recovery current when switched from I F = A to V R V and di F /dt = A/µs; see Fig.7 4 A/µs 5 A/µs THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = mm 8 K/W R th j-a thermal resistance from junction to ambient note 5 K/W Note. Device mounted on an epoxy-glass printed-circuit board,.5 mm thick; thickness of Cu-layer 4 µm, see Fig.6. For more information please refer to the General Part of Handbook SC. 996 Sep 9 4 Not recommended for new designs
GRAPHICAL DATA.8 MCD565.8 MCD564 I F(AV) I F(AV).6 lead length mm.6 lead length mm.4.4 o T tp ( C) a =.4; V R =V RRMmax ; δ =.5. Switched mode application. o T tp ( C) a =.4; V R =V RRMmax ; δ =.5. Switched mode application. Fig. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Fig. Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage)..6 MGC56.6 MGC57 I F(AV) I F(AV).4.4 o T amb ( C) o T amb ( C) a =.4; V R =V RRMmax ; δ =.5. Device mounted as shown in Fig.6. Switched mode application. a =.4; V R =V RRMmax ; δ =.5. Device mounted as shown in Fig.6. Switched mode application. Fig.4 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). Fig.5 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). 996 Sep 9 5 Not recommended for new designs
5. MCD56 I FRM δ =.5..5.5 - - tp (ms ) 4 T tp =55 C; R th j-tp = 8 K/W. V RRMmax during δ; curves include derating for T j max at V RRM = V. Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 5. I FRM δ =.5 MCD56..5.5 - - t p ( ms) 4 T tp =55 C; R th j-tp = 8 K/W. V RRMmax during δ; curves include derating for T j max at V RRM = 4 V. Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 996 Sep 9 6 Not recommended for new designs
4 MCD56 I FRM δ =.5..5 - - tp ( ms) 4 T amb =6 C; R th j-a = 5 K/W. V RRMmax during δ; curves include derating for T j max at V RRM = V. Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 4 MCD56 I FRM δ =.5..5 - - 4 t p ( ms ) T amb =6 C; R th j-a = 5 K/W. V RRMmax during δ; curves include derating for T j max at V RRM = 4 V. Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor. 996 Sep 9 7 Not recommended for new designs
.5 a = MCD567.5 a = MCD566 P (W).5 a =.57 P (W).5 a =.57.4.4 5 5 5.5 I F(AV) a=i F(RMS) /I F(AV) ; V R =V RRMmax ; δ =.5. 5 I F(AV).5 a=i F(RMS) /I F(AV) ; V R =V RRMmax ; δ =.5. Fig. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. Fig. Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. 5 I F 4 MCD568 5 I F 4 MCD569 4 V F (V) V F (V) Dotted line: T j = 75 C. Solid line: T j =5 C. Fig. Forward current as a function of forward voltage; maximum values. Dotted line: T j = 75 C. Solid line: T j =5 C. Fig. Forward current as a function of forward voltage; maximum values. 996 Sep 9 8 Not recommended for new designs
MCD58 handbook, halfpage MCD559 I R (µa) C d (pf) A, B, C, D E, F, G T j ( o C) V R (V) V R =V RRMmax. f = MHz; T j =5 C. Fig.4 Reverse current as a function of junction temperature; maximum values. Fig.5 Diode capacitance as a function of reverse voltage; typical values. 5 5 dbook, I F halfpage 7 5 di F dt t rr I R di R dt % t % MGC499 MGA Dimensions in mm. Fig.6 Device mounted on a printed-circuit board. Fig.7 Reverse recovery definitions. 996 Sep 9 9 Not recommended for new designs
Ω 5 V + DUT I F.5 trr 5 Ω Ω 5 t.5 I R MAM57 Input impedance oscilloscope: MΩ, pf; t r 7 ns. Source impedance: 5 Ω; t r 5 ns. Fig.8 Test circuit and reverse recovery time waveform and definition. 996 Sep 9 Not recommended for new designs
PACKAGE OUTLINE.5 max.55 max.7 max 9 min. max 9 min MBC5 Dimensions in mm. The marking band indicates the cathode. Fig.9 SOD9. DEFINITIONS Data Sheet Status Objective specification Preliminary specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 4). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 996 Sep 9 Not recommended for new designs