DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product data sheet Supersedes data of 1999 May 25.

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1 DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May Feb 27

2 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2%, and approx. ±5% Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS Low voltage stabilizers or voltage references. k a MAM239 DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 ±2% (BZX79-B) and approx. ±5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The diodes are type branded. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I F continuous forward current 250 ma I ZSM non-repetitive peak reverse current t p = 0 μs; square wave; T j = 25 C prior to surge Notes 1. Device mounted on a printed circuit-board without metallization pad; lead length max. 2. Tie-point temperature 50 C; max. lead length 8 mm. see Tables 1 and 2 P tot total power dissipation T amb = 50 C; note mw P ZSM non-repetitive peak reverse power dissipation T amb = 50 C; note mw t p = 0 μs; square wave; 40 W T j = 25 C prior to surge; see Fig.3 T stg storage temperature C T j junction temperature C A ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT V F forward voltage I F = ma; see Fig V 2002 Feb 27 2

3 SYMBOL PARAMETER CONDITIONS MAX. UNIT I R reverse current BZX79-B/C2V4 V R = 1 V 50 μa BZX79-B/C2V7 V R = 1 V 20 μa BZX79-B/C3V0 V R = 1 V μa BZX79-B/C3V3 V R = 1 V 5 μa BZX79-B/C3V6 V R = 1 V 5 μa BZX79-B/C3V9 V R = 1 V 3 μa BZX79-B/C4V3 V R = 1 V 3 μa BZX79-B/C4V7 V R = 2 V 3 μa BZX79-B/C5V1 V R = 2 V 2 μa BZX79-B/C5V6 V R = 2 V 1 μa BZX79-B/C6V2 V R = 4 V 3 μa BZX79-B/C6V8 V R = 4 V 2 μa BZX79-B/C7V5 V R = 5 V 1 μa BZX79-B/C8V2 V R = 5 V 700 na BZX79-B/C9V1 V R = 6 V 500 na BZX79-B/C V R = 7 V 200 na BZX79-B/C11 V R = 8 V 0 na BZX79-B/C12 V R = 8 V 0 na BZX79-B/C13 V R = 8 V 0 na BZX79-B/C15 to BZX79-B/C75 V R = 0.7V Znom 50 na 2002 Feb 27 3

4 2002 Feb 27 4 Table 1 Per type, BZX79-B/C2V4 to BZX79-B/C24 T j = 25 C unless otherwise specified. BZX79- Bxxx Cxxx WORKING VOLTAGE V Z (V) at I Ztest = 5 ma Tol. ±2% (B) Tol. approx. ±5% (C) DIFFERENTIAL RESISTANCE r dif (Ω) at I Ztest = 1 ma at I Ztest = 5 ma TEMP. COEFF. S Z (mv/k) at I Ztest = 5 ma (see Figs 5 and 6) DIODE CAP. C d (pf) at f = 1 MHz; V R = 0 V NON-REPETITIVE PEAK REVERSE CURRENT I ZSM (A) at t p = 0 μs; T amb = 25 C MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX. 2V V V V V V V V V V V V V V V NXP Semiconductors

5 2002 Feb 27 5 Table 2 Per type, BZX79-B/C27 to BZX79-B/C75 T j = 25 C unless otherwise specified. BZX79- Bxxx Cxxx WORKING VOLTAGE V Z (V) at I Ztest = 2 ma Tol. ±2% (B) Tol. approx. ±5% (C) DIFFERENTIAL RESISTANCE r dif (Ω) at I Ztest = 0.5 ma at I Ztest = 2 ma TEMP. COEFF. S Z (mv/k) at I Ztest = 2 ma (see Figs 5 and 6) DIODE CAP. C d (pf) at f = 1 MHz; V R = 0 V NON-REPETITIVE PEAK REVERSE CURRENT I ZSM (A) at t p = 0 μs; T amb = 25 C MIN. MAX. MIN. MAX. TYP. MAX. TYP. MAX. MIN. TYP. MAX. MAX. MAX NXP Semiconductors

6 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length 8 mm. 300 K/W R th j-a thermal resistance from junction to ambient lead length max.; see Fig.2 and note K/W Note 1. Device mounted on a printed circuit-board without metallization pad. GRAPHICAL DATA 3 handbook, full pagewidth MBG930 R th j-a (K/W) 2 δ = t p T t p δ = T t p (ms) 5 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration Feb 27 6

7 3 MBG MBG781 P ZSM (W) I F (ma) (1) 0 (2) duration (ms) V F (V) 1 (1) T j = 25 C (prior to surge). (2) T j = 150 C (prior to surge). T j = 25 C. Fig.3 Maximum permissible non-repetitive peak reverse power dissipation versus duration. Fig.4 Typical forward current as a function of forward voltage. 0 S Z (mv/k) 1 2 MBG783 4V3 3V9 3V6 3V3 3V0 S Z (mv/k) V1 8V2 7V5 6V8 6V2 5V6 5V1 4V7 MBG782 2V4 2V I 60 Z (ma) I Z (ma) BZX79-B/C2V4 to BZX79-B/C4V3. T j = 25 to 150 C. BZX79-B/C4V7 to BZX79-B/C12. T j = 25 to 150 C. Fig.5 Temperature coefficient as a function of working current; typical values. Fig.6 Temperature coefficient as a function of working current; typical values Feb 27 7

8 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D L G 1 L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G 1 max. L min mm scale mm Note 1. The marking band indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOD27 A24 DO-35 SC Feb 27 8

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product specification Supersedes data of 1999 May 25.

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 25 2002 Feb 27 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2%, and approx. ±5% Working voltage range: nom.