l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Drop in Replacement of the IRFZ48 for Linear/Audio Applications Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. HEXFET Power MOSFET D S PD 93958 V DSS = 60V R DS(on) = 0.018Ω I D = 50*A The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units I D @ T C = 25 C Continuous Drain Current, V GS @ 10V 50* I D @ T C = 100 C Continuous Drain Current, V GS @ 10V 50* A I DM Pulsed Drain Current 290 P D @T C = 25 C Power Dissipation 190 W Linear Derating Factor 1.3 W/ C V GS GatetoSource Voltage ± 20 V E AS Single Pulse Avalanche Energy 100 mj I AR Avalanche Current 50 A E AR Repetitive Avalanche Energy 19 mj dv/dt Peak Diode Recovery dv/dt ƒ 4.5 V/ns T J Operating Junction and 55 to 175 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 632 or M3 srew 10 lbf in (1.1N m) Thermal Resistance TO220AB Parameter Typ. Max. Units R θjc JunctiontoCase 0.8 R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θja JunctiontoAmbient 62 www.irf.com 1 8/24/00
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 60 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.060 V/ C Reference to 25 C, I D = 1mA R DS(on) Static DraintoSource OnResistance 0.018 Ω V GS = 10V, I D = 43A V GS(th) Gate Threshold Voltage 2.0 4.0 V V DS = V GS, I D = 250µA g fs Forward Transconductance 27 S V DS = 25V, I D = 43A I DSS DraintoSource Leakage Current 25 V µa DS = 60V, V GS = 0V 250 V DS = 48V, V GS = 0V, T J = 150 C I GSS GatetoSource Forward Leakage 100 V GS = 20V na GatetoSource Reverse Leakage 100 V GS = 20V Q g Total Gate Charge 110 I D = 72A Q gs GatetoSource Charge 29 nc V DS = 48V Q gd GatetoDrain ("Miller") Charge 36 V GS = 10V, See Fig. 6 and 13 t d(on) TurnOn Delay Time 8.1 V DD = 30V t r Rise Time 250 I D = 72A ns t d(off) TurnOff Delay Time 210 R G = 9.1Ω t f Fall Time 250 R D = 0.34Ω, See Fig. 10 Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 2400 V GS = 0V C oss Output Capacitance 1300 V DS = 25V C rss Reverse Transfer Capacitance 190 pf ƒ = 1.0MHz, See Fig. 5 D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 50* (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 290 (Body Diode) pn junction diode. S V SD Diode Forward Voltage 2.0 V T J = 25 C, I S = 72A, V GS = 0V t rr Reverse Recovery Time 120 180 ns T J = 25 C, I F = 72A Q rr Reverse Recovery Charge 0.50 0.80 µc di/dt = 100A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) V DD = 25V, Starting T J = 25 C, L = 22µH R G = 25Ω, I AS = 72A. (See Figure 12) ƒ I SD 72A, di/dt 200A/µs, V DD V (BR)DSS, T J 175 C Pulse width 300µs; duty cycle 2%. * Current limited by the package, (Die Current = 72A) 2 www.irf.com
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics R DS(on), DraintoSource On Resistance (Normalized) 2.5 I D = 72A 2.0 1.5 1.0 0.5 V GS = 10V 0.0 60 40 20 0 20 40 60 80 100 120 140 160 180 T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature www.irf.com 3
Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I D, Drain Current (A) 1000 100 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms TC = 25 C TJ = 175 C Single Pulse 1 0.1 1 10 100 1000 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
I D, Drain Current (A) 80 60 40 20 LIMITED BY PACKAGE R D V DS V GS D.U.T. R G 10V Pulse Width 1 µs Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% V DD 0 25 50 75 100 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% V GS t d(on) t r t d(off) t f Fig 10b. Switching Time Waveforms 1 Thermal Response(Z thjc ) 0.1 D = 0.50 0.20 0.10 0.05 t1 0.02 t2 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J= P DM x Z thjc TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1, Rectangular Pulse Duration (sec) PDM Fig 11. Maximum Effective Transient Thermal Impedance, JunctiontoCase www.irf.com 5
R G V DS 20V tp Fig 12a. Unclamped Inductive Test Circuit tp I AS L D.U.T 0.01Ω 15V V (BR)DSS DRIVER V DD A E AS, Single Pulse Avalanche Energy (mj) 250 200 150 100 50 I D TOP 29A 51A BOTTOM 72A 0 25 50 75 100 125 150 175 Starting T, Junction Temperature ( J C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 12V.2µF.3µF 10 V Q GS Q GD D.U.T. V DS V GS V G 3mA Charge Fig 13a. Basic Gate Charge Waveform I G I D Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 www.irf.com
Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =10V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 14. For NChannel HEXFETS www.irf.com 7
Package Outline TO220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) A 4.69 (.185) 4.20 (.165) B 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS 1 GATE 2 DR AIN 3 SOURCE 4 DR AIN 3X 1.40 (.055) 1.15 (.045) 2.54 (.100) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF1010 9246 9B 1M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 2527105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 1311, Singapore 237994 Tel: 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886(0)2 2377 9936 Data and specifications subject to change without notice. 8/00 8 www.irf.com