Enabling Parallel Testing at Sort for High Power Products

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Enabling Parallel Testing at Sort for High Power Products Abdel Abdelrahman Tim Swettlen 2200 Mission College Blvd. M/S SC2-07 Santa Clara, CA 94536 Abdel.Abdelrahman@intel.com Tim.Swettlen@intel.com

Agenda Background Goals: Interchangeability between a 1X and 2X SIU Equivalent performance between a 1X SIU and a 2X SIU Equivalent performance between test site 1 and test site 2 on the 2X SIU Challenges Spatial Location of 2 DUTs Space Transformer Printed Circuit Board (PCB) Interconnect and stiffening Hardware Results Minimal Deflections Power delivery Signal Integrity Summary 2 2002

Background Parallel Testing is a manufacturing capability that allows multiple devices to be tested simultaneously. Parallel testing allows the user to improve output capacity of each e test module by reducing the average test time Capability has existed at Intel for Flash Memory products since 1989. For High Power CPUs parallel testing (2X) aims to test 2 die at a time. Testing 2 CPUs at one time has been more challenging due to the high power demand and the complexity of the probe card design This presentation focuses on the work done to demonstrate the 2X probe card capability being applied to microprocessors 3 2002

Project Goal GOAL: To develop a robust 2X Sort Interface Unit (SIU) capable of intercepting high power microprocessors Fundamental criteria: Interchangeability and equivalent performance between the 1X and the 2X SIU - To eliminate the need to segregate test modules - To increase cost savings Equivalent performance between test site 1 and test site 2 on o the 2X SIU To reduce test pattern development Boundary conditions Similar shape, size and functionality of the probe card Equivalent power delivery and routing integrity 4 2002

Magnitude of change Minor Minor Mix Major Major Minor A B C D Challenges A. New Stiffener: : To accommodate larger MLC B. Bulk decoupling: : New location and improved components C. PCB: : Split power planes for isolation D. Interconnect: : Increase in physical size and LGA count E. Space Transformer: : Split plans, new stack, larger in size F. Probes: : Same as current probe selection, but marginal increase in total probe count PCB Top-side Stiffening Hardware Ceramic Mounting Block Stiffener plate E Wafer F 5 2002

Comparison of noted 1X and 2X SIU differences Noted Differences Short list 1X Configuration 2X Configuration 1X Envelope Wafer Level contacts # of contacts ~ 1600 total ~ 3200 total ~ 3000 total Glass Ceramic ST # of I/Os Routing Routing Technology Dimensions Decoupling ~ 125 total 2 layers ceramic 2.5 x 2.5 x 0.150 ~ 90 caps total ~ 250 total 1 layer Thin Film 3.5 x 3.5 x 0.150 ~ 180 caps total ~ 300 total Mixed 2.5 x 2.5 x 0.150 ~ 90 caps Printed Circuit Board # of layers Thickness LGA 22 0.187 ~ 1300 total 24 0.187 > 2500 total 22 0.187 > 2500 total 6 2002

Thin Film Space Transformer Equivalent performance challenges most pronounced in ST Power delivery of ~ 60 W per DUT Larger space to allow adequate decoupling and power plane area. Signal routing: escape routing of 128 channels per design Thin Film allows fine line widths to be fabricated. A2/B1 alternatives: More space w/ constraints: scribe width, planarity LGAs 2.5 1 DIE CAPs B1 A2 3.5 7 2002

Interconnect and Space Transformer (ST) ST area would be increased by ~80% Increased LGA count to >2500 at the PCB interface Required development of an interconnect solution ST would need to provide independent power delivery systems No shared power planes No shared reference (Ground) planes Routing rules needed to be defined to maintain Signal integrity Increased # of decoupling capacitors, locations not as ideal Location of two DUT arrays given the above constraints Where to locate the two arrays with respect to each other 8 2002

Spatial Location of the two DUT s Flexibility in choice A 3x3 maximum array area was assumed possible Trade off analysis: SIU manufacturing, routing, power delivery, die isolation, heat dissipation and a sort de-rating study that considered wafer stepping impacts with different patterns A diagonal side-by by-side pattern was considered to be the best solution to all constraints Sites A2/B1 Splitting the power planes Consider power delivery Consider decoupling A2/B1 Design S.T. A1 A2 A3 B1 B2 B3 C1 C2 C3 OR 9 2002

Printed Circuit Board Interchangeability with the 1X SIU: Same PCB thickness Power delivery: Two more power planes (Vcc( Vcc) ) required. Modified the PCB stack-up by decreasing dielectric layer s thickness to add two planes. Signal Routing: 128 per DUT in 6 layers required Orientation site A2/B1 to its appropriate tester Connectors Forcing signals to the outer rows of the LGA pattern of the S.T. helped ease the routing Site A2 power connector PCB A2 Split B1 Site A2 signal connector PCB Site B1 signal connector Site B1 power connector 10 2002

Interconnect Solution Selection Trade off analysis: Reflow Heat, CTE mismatch, planarity and thinner ST Interconnect What it is Heat to attach pins/balls Planarity improvement Compatibility w/thinner ST 50 mil pitch achievable N/A < 2.0 mils No Yes Button Interposer Pogo interposer Ball Grid Array of Pb/Sn solder balls Up to 225 C < 2.0 mils Yes Yes BGA Pin Grid Array of gold plated Kovar pins Up to 800 C < 2.0 mils Yes No PGA 11 2002

PCB Mechanical stiffener Requirements to meet: -Fit in a larger ST -Increase ID of mounting hardware keep out zone -Limit 2X stiffener thickness changes to control/reduce deflection -Maintain clearance for tester cable connections. Clearance ID 12 2002

Deflection Data Preliminary data collected on 1 tool, using a deflection measurement system, show signs of reduced deflection. More data needed to improve accuracy of best fit line (R 2 ) and to better assess repeatability and reproducibility 13 2002

The Measurements what we did 8 measurement points 4 per DUT Measure voltage at the DUT Provide ability to block non- uniform demand of the DUT Measured with Site 1 ON and Site 2 ON Site 1 ON and Site 2 OFF Site 1 OFF and Site 2 ON J3 J4 J5 J6 J9 J10 J11 J12 14 2002

Performance Results Within site a large variance, but site to site well matched Site 1 = ON Site 2 = ON J3 & J9 DUT running > 1.0 GHz VOLTAGE J3 J4 J5 J6 J9 J10 J11 J12 J6 & J12 T I M E 15 2002

Performance Results, Cross talk No measurable coupling of energy between sites J11 J9 Site 1 = OFF Site 2 = ON DUT running > 1.0 GHz VOLTAGE 0 V; no energy coupled site to site J3 J4 J6 Plotted on Right scale J5 J6 J9 J10 J11 J12 T I M E 16 2002

Performance Results, Cross talk No measurable coupling of energy between sites J6 J4 Site 1 = ON Site 2 = OFF DUT running > 1.0 GHz VOLTAGE 0 V; no energy coupled site to site J3 J4 J5 J6 J9 J10 J9 Plotted on Right scale J11 J12 T I M E 17 2002

Signal integrity between sites TDR of 10 traces on both sites Lengths are different, but this is compensated by the ATE Worst channels shown Site 2 10 channels Comparable magnitudes Site 1 10 channels 18 2002

Summary To date the 2X SIU development is progressing at or beyond expectations Metrology system check out passed with no issues Sort performance data shows 2X card progressing well Small hick-ups still need to be worked on Improvements to the SI path planned, but not critical (yet) More characterization work to be completed Progressing well against slide four goals 19 2002

Acknowledgement Many thanks to Eugene Doan, Bau Nguyen, Thuy Pham and Kevin Zhu for all the efforts spent on the 2X project Thanks to the ITTO team for the feedback and making sure the paper wasn t too boring Thank YOU! 20 2002