Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N-Channel 20V/3A, R DS(ON) =50mΩ(typ.) @ =4.5V R DS(ON) =65mΩ(typ.) @ =2.5V P-Channel -20V/-2A, R DS(ON) =90mΩ(typ.) @ =-4.5V R DS(ON) =30mΩ(typ.) @ =-2.5V Super High Dense Cell Design 4 5 6 3 2 Top View of JSOT-6 (6)D (4)D2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems ()G (5)S N-Channel MOSFET (3)G2 (2)S2 P-Channel MOSFET Ordering and Marking Information APM270 Assembly Material Handling Code Temperature Range Package Code Package Code CG : JSOT-6 Operating Junction Temperature Range C : -55 to 50 o C Handling Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device APM270 CG : M270 - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 00% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Rev. A.5 - Jun., 200
Absolute Maximum Ratings (T A = 25 C unless otherwise noted) Symbol Parameter Rating N Channel P Channel Unit V DSS Drain-Source Voltage 20-20 S Gate-Source Voltage ±2 ±2 V I D * Continuous Drain Current 3-2 =±4.5V I DM * 300µs Pulsed Drain Current 2-8 A I S * Diode Continuous Forward Current - A T J Maximum Junction Temperature 50 T STG Storage Temperature Range -55 to 50 C P D * Power Dissipation T A =25 C 0.83 T A =00 C 0.3 W R θja * Thermal Resistance-Junction to Ambient 50 C/W Note : *Surface Mounted on in 2 pad area, t 0sec. Electrical Characteristics (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BV DSS S Min. Typ. Max. Drain-Source Breakdown =0V, =250µA N-Ch 20 - - Voltage =0V, =-250µA P-Ch -20 - - Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current =±0V, V DS =0V R DS(ON) a Drain-Source On-State Resistance V DS =6V, =0V - - N-Ch T J =85 C - - 30 V DS =-6V, =0V - - - P-Ch T J =85 C - - -30 V DS =, =250µA N-Ch 0.45 0.6 V DS =, =-250µA P-Ch -0.45-0.6 - N-Ch - - ±0 P-Ch - - ±0 =4.5V, =3A N-Ch - 50 65 =-4.5V, =-2A P-Ch - 90 20 =2.5V, =.7A N-Ch - 65 90 =-2.5V, =-A P-Ch - 30 80 Unit V µa V µa mω Rev. A.5 - Jun., 200 2
Electrical Characteristics (Cont.) (T A = 25 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics (Cont.) V SD a Diode Forward Voltage Min. Typ. Max. I SD =0.5A, =0V N-Ch - 0.7.3 I SD =-0.5A, =0V P-Ch - -0.7 -.3 Dynamic Characteristics b N-Channel N-Ch - 300 - C iss Input Capacitance =0V, V P-Ch - 375 - DS =0V, Frequency=.0MHz N-Ch - 70 - C oss Output Capacitance P-Channel P-Ch - 70 - =0V, Reverse Transfer N-Ch - 50 - C rss V DS =-0V, Capacitance Frequency=.0MHz P-Ch - 50 - Unit V pf t d(on) T r t d(off) T f Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time N-Channel V DD =0V, R L =0Ω, =A, V GEN =4.5V, R G =6Ω P-Channel V DD =-0V, R L =0Ω, =-A, V GEN =-4.5V, R G =6Ω N-Ch - 6 2 P-Ch - 6 2 N-Ch - 4 26 P-Ch - 4 26 N-Ch - 2 39 P-Ch - 27 50 N-Ch - 6 2 P-Ch - 5 0 ns Gate Charge Characteristics b N-Ch - 5 6.5 Q g Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Channel V DS =0V, =4.5V, =3A P-Channel V DS =-0V, =-4.5V, =-.5A Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. P-Ch - 4 6 N-Ch - 0.5 - P-Ch - 0.6 - N-Ch -.6 - P-Ch - - nc Rev. A.5 - Jun., 200 3
Typical Operating Characteristics N-Channel Power Dissipation Drain Current.0 3.5 0.8 3.0 Ptot - Power (W) 0.6 0.4 ID - Drain Current (A) 2.5 2.0.5.0 0.5 0 20 40 60 80 00 20 40 60 0 20 40 60 80 00 20 40 60 Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 50 0 0. Rds(on) Limit 300µs ms 0ms 00ms s DC T A =25 o C 0. 0 00 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2 0. 2 5 0. Duty = 0.5 Single Pulse Mounted on in 2 pad R θja : 50 o C/W E-4 E-3 0. 0 30 Square Wave Pulse Duration (sec) Rev. A.5 - Jun., 200 4
Typical Operating Characteristics (Cont.) N-Channel Output Characteristics Drain-Source On Resistance 2 = 3,4,5,6,7,8,9,0V 90 84 ID - Drain Current (A) 0 9 8 7 6 5 4 3 2 2V.5V RDS(ON) - On - Resistance (Ω) 78 72 66 60 54 48 42 =2.5V =4.5V 36 0 0.5.0.5 2.0 2.5 3.0 VDS - Drain - Source Voltage (V) 30 0 2 4 6 8 0 2 ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 00 90 =3A.8.6 =250µA ID - Drain Current (A) 80 70 60 50 40 Normalized Threshold Voltage.4.2.0 0.8 0.6 0.4 30 2 3 4 5 6 7 8 9 0 VGS - Gate - Source Voltage (V) -50-25 0 25 50 75 00 25 50 Rev. A.5 - Jun., 200 5
Typical Operating Characteristics (Cont.) N-Channel Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance 2.0.8.6.4.2.0 0.8 0.6 0.4 = 4.5V = 3A IS - Source Current (A) 20 0 T j =50 o C Tj=25oC R ON @T j =25 o C: 50mΩ -50-25 0 25 50 75 00 25 50 0. 0.4 0.6 0.8.0.2.4.6 VSD - Source - Drain Voltage (V) Capacitance Gate Charge 500 450 Frequency=MHz 5.0 4.5 V DS = 0V = 3A C - Capacitance (pf) 400 350 300 250 200 50 00 50 Crss Coss Ciss VGS - Gate - source Voltage (V) 4.0 3.5 3.0 2.5 2.0.5.0 0.5 0 0 4 8 2 6 20 VDS - Drain - Source Voltage (V) 0 2 3 4 5 QG - Gate Charge (nc) Rev. A.5 - Jun., 200 6
Typical Operating Characteristics (Cont.) P-Channel Power Dissipation Drain Current.0 2.5 0.8 2.0 Ptot - Power (W) 0.6 0.4 -ID - Drain Current (A).5.0 0.5 0 20 40 60 80 00 20 40 60 0 20 40 60 80 00 20 40 60 Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A) 30 0 0. Rds(on) Limit 300µs ms 0ms 00ms s DC T A =25 o C 0. 0 00 Normalized Transient Thermal Resistance 2 0. 2 5 0. Duty = 0.5 Mounted on in 2 pad Single Pulse R θja : 50 o C/W E-4 E-3 0. 0 00 -VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Rev. A.5 - Jun., 200 7
Typical Operating Characteristics (Cont.) P-Channel Output Characteristics Drain-Source On Resistance 8 =-2.5,-3-4,-5,-6, 200 7-7,-8,-9,-0V 80 -ID - Drain Current (A) 6 5 4 3 2-2V -.5V RDS(ON) - On - Resistance (Ω) 60 40 20 00 80 = -2.5V = -4.5V 60 0 0.5.0.5 2.0 2.5 3.0 -VDS - Drain - Source Voltage (V) 40 0 2 3 4 5 6 7 8 -ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 240 =-2A.8 = -250µA -ID - Drain Current (A) 20 80 50 20 90 60 Normalized Threshold Voltage.6.4.2.0 0.8 0.6 0.4 30 2 3 4 5 6 7 8 9 0 -VGS - Gate - Source Voltage (V) -50-25 0 25 50 75 00 25 50 Rev. A.5 - Jun., 200 8
Typical Operating Characteristics (Cont.) P-Channel Drain-Source On Resistance Source-Drain Diode Forward 2.0.8 = -4.5V = -2A 0 Normalized On Resistance.6.4.2.0 0.8 0.6 0.4 -IS - Source Current (A) T j =50 o C T j =25 o C R ON @T j =25 o C: 90mΩ -50-25 0 25 50 75 00 25 50 0. 0.3 0.6 0.9.2.5 -VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 550 500 450 400 350 300 250 200 50 00 50 Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) 5.0 4.5 4.0 3.5 3.0 2.5 2.0.5.0 0.5 V DS = -0V = -2A 0 0 4 8 2 6 20 -VDS - Drain - Source Voltage (V) 0 2 3 4 5 QG - Gate Charge (nc) Rev. A.5 - Jun., 200 9
Package Information JSOT-6 D L E E2 E b e c A A2 A S Y M MILLIMETERS B O L MIN. MAX. A A b c D E E E2 e L 0.93.0 37 A2 0.92.00 5 0.40 0 2.95 3.0 2.50 3.00 2.30 2.65 3.05 0.95 BSC 0.30 0.60 JSOT-6 MIN. INCHES MAX. 43 00 04 36 39 0 6 04 08 0.6 2 98 0.8 2.50 9 98 4 0 37 BSC 0 0 8 0 8 2 24 Note :. Follow GEM 2928 6J. 2. Dimension D, D, and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0 mil. Rev. A.5 - Jun., 200 0
Carrier Tape & Reel Dimensions OD0 P0 P2 P A W F E B A0 OD B A T B0 K0 SECTION A-A SECTION B-B d H A T Application A H T C d D W E F JSOT-6 78.0 2.00 50 MIN. 8.4+2.00-0 3.0+0.50-0.5 MIN. 2 MIN. 8.0 0.30.75 3.5 5 P0 P P2 D0 D T A0 B0 K0 4.0 4.0 2.0 5.5+ -0.0 MIN. 0.6+0-0.40 3.20 0 3.0 0.50 0 (mm) Devices Per Unit Package Type Unit Quantity JSOT-6 Tape & Reel 3000 Rev. A.5 - Jun., 200
Taping Direction Information JSOT-6 USER DIRECTION OF FEED MAAAA MAAAA MAAAA MAAAA MAAAA MAAAA MAAAA Classification Profile Rev. A.5 - Jun., 200 2
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 00 C 50 C 60-20 seconds 50 C 200 C 60-20 seconds Average ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C 60-50 seconds 27 C 60-50 seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds Average ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 350 <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm 3 350-2000 Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERABILITY JESD-22, B02 5 Sec, 245 C HOLT JESD-22, A08 000 Hrs, Bias @ 25 C PCT JESD-22, A02 68 Hrs, 00%RH, 2atm, 2 C TCT JESD-22, A04 500 Cycles, -65 C~50 C Rev. A.5 - Jun., 200 3
Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 2F, No., Lane 28, Sec 2 Jhongsing Rd., Sindain City, Taipei County 2346, Taiwan Tel : 886-2-290-3838 Fax : 886-2-297-3838 Rev. A.5 - Jun., 200 4