SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( Suffix) Lead Formed Version in 6 mm Tape and Reel for Surface Mount ( T4 Suffix) Electrically Similar to Popular D44H/D45H Series Low Collector Emitter Saturation Voltage VCE(sat) =. Volt Max @ 8. Amperes Fast Switching Speeds Complementary Pairs Simplifies Designs MAXIMUM RATINGS ÎÎ Rating Symbol D44H or D45H Unit ÎÎ Collector Emitter Voltage VCEO 8 Vdc Emitter Base Voltage VEB 5 Vdc Collector Current Continuous IC 8 Peak 6 Adc Total Power Dissipation ÎÎ PD ÎÎ @ TC = 25 C 2 Watts ÎÎ Derate above 25 C.6 W/ C Total Power Dissipation () Î PD ÎÎ @ TA = 25 C.75 Watts Derate above 25 C.4 W/ C Operating and Storage Junction Î TJ, Tstg 55 to 5 C Temperature Range THERMAL CHARACTERISTICS Characteristic Î Symbol Max Unit Thermal Resistance, Junction to Case Î RθJC 6.25 C/W Thermal Resistance, Junction to Ambient () Î RθJA 7.4 C/W Lead Temperature for Soldering Î TL 26 C () These ratings are applicable when surface mounted on the minimum pad size recommended. *Motorola Preferred Device SILICON POWER TRANSISTORS 8 AMPERES 8 VOLTS 2 WATTS CASE 369A 3 CASE 369 7 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS.9 4.826.7.8.63.6.8 3..65 4.9 43 6.72 inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola, Inc. 995 Motorola Bipolar Power Transistor Device Data
ÎÎ ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ÎÎ OFF CHARACTERISTICS Collector Emitter Sustaining Voltage Î (IC = 3 ma, IB = ) Î VCEO(sus) 8 Vdc Collector Cutoff Current Î Î ICES µa Î Î Î (VCE = Rated VCEO, VBE = ) Emitter Cutoff Current Î Î IEBO Î Î 5 µa (VEB = 5 Vdc) ÎÎ ÎÎ ON CHARACTERISTICS Î Collector Emitter Saturation Voltage VCE(sat)Î Î Î Vdc Î (IC = 8 Adc, IB =.4 Adc) Base Emitter Saturation Voltage (IC = 8 Adc, IB =.8 Adc) Î VBE(sat)Î Î Î Î.5 Vdc Î DC Current Gain Î Î hfe 6 Î Î ÎÎ Î (VCE = Vdc, IC = 2 Adc) DC Current Gain Î Î 4 Î Î Î Î Î (VCE = Vdc, IC = 4 Adc) DYNAMIC CHARACTERISTICS Î Î Î Collector Capacitance Ccb pf Î Î Î (VCB = Vdc, ftest = MHz) MJD44H 3 Î Î MJD45H Î 23 Î Î Gain Bandwidth Product Î Î Î ft MHz Î (IC =.5 Adc, VCE = Vdc, f = 2 MHz) MJD44H Î Î Î 5 Î MJD45H 4 SWITCHING TIMES Î Î Î Î Î Î Î Delay and Rise Times Î Î (IC = 5 Adc, IB =.5 Adc) MJD44H Î Î Î td + tr ns 3 Î MJD45H Î 35 Î Î Storage Time Î Î Î ts ns Î Î (IC = 5 Adc, IB = IB2 =.5 Adc) MJD44H Î Î Î 5 Î Î Î MJD45H Î Î 5 Î Fall Time Î tf Î Î ns Î (IC = 5 Adc, IB = IB2 =.5 Adc) MJD44H 4 Î Î MJD45H Î Î 2 Motorola Bipolar Power Transistor Device Data
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED).7.5.3..7.5.3.2.. D =.5.5.2. SINGLE PULSE. RθJC(t) = r(t) RθJC RθJC = 6.25 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) θjc(t).2.3.5..3.5 2 3 5 2 3 5 2 3 5 t, TIME (ms) Figure. Thermal Response P(pk) t t 2 DUTY CYCLE, D = t/t2 k IC, COLLECTOR CURRENT (AMP) 2 5 3 2.5.3..5.2 dc 5 ms 5 µs THERMAL LIMIT @ TC = 25 C WIRE BOND LIMIT µs 3 5 7 2 3 5 7 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 5 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided TJ(pk) 5 C. TJ(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 2. Maximum Forward Bias Safe Operating Area TA 2.5 TC 25 PD, POWER DISSIPATION (WATTS) 2.5.5 2 5 5 TC TA SURFACE MOUNT 25 5 75 25 5 T, TEMPERATURE ( C) Figure 3. Power Derating Motorola Bipolar Power Transistor Device Data 3
VCE = 4 V VCE = V VCE = 4 V V.. Figure 4. MJD44H DC Current Gain Figure 5. MJD45H DC Current Gain 25 C 4 C VCE = V 25 C 4 C VCE = V.. Figure 6. MJD44H Current Gain versus Temperature Figure 7. MJD45H Current Gain versus Temperature.2.2 SATURATION VOLTAGE (VOLTS).8.6.4 IC/IB = VCE(sat) VBE(sat) SATURATION VOLTAGE (VOLTS).8.6.4 IC/IB = VBE(sat) VCE(sat).. Figure 8. MJD44H On Voltages Figure 9. MJD45H On Voltages 4 Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS V S F B R 4 2 3 G L A K D 2 PL J H C.3 (.5) M T T E SEATING PLANE U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 35 5 5.97 6.35 B 5 65 6.35 6.73 C.86.94 2.9 2.38 D.27.35.69.88 E.33.4.84. F.37.47.94.9 G.8 BSC 4.58 BSC H.34.4.87. J.8.23.46.58 K.2.4 2.6 2.89 L.9 BSC 2.29 BSC R.75 5 4.45 5.46 S.2.5.5.27 U.2.5 V.3.5.77.27 Z.38 3.5 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 369A 3 ISSUE W V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. T SEATING PLANE S F 4 2 3 G A K D 3 PL.3 (.5) M T J H INCHES MILLIMETERS DIM MIN MAX MIN MAX A 35 5 5.97 6.35 B 5 65 6.35 6.73 C.86.94 2.9 2.38 D.27.35.69.88 E.33.4.84. F.37.47.94.9 G.9 BSC 2.29 BSC H.34.4.87. J.8.23.46.58 K.35.38 8.89 9.65 R.75 5 4.45 5.46 S.5.9.27 2.28 V.3.5.77.27 STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 369 7 ISSUE K Motorola Bipolar Power Transistor Device Data 5
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