PD - 94076 INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability G E N-channel V CES = 600V V CE(on) typ. = 2.16V @V GE = 15V, I C = 6.5A Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) D 2 Pak Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I C @ T C = 25 C Continuous Collector Current 13 I C @ T C = 0 C Continuous Collector Current 6.5 A I CM Pulsed Collector Current 52 I LM Clamped Inductive Load Current 52 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 200 mj P D @ T C = 25 C Maximum Power Dissipation 60 P D @ T C = 0 C Maximum Power Dissipation 24 W T J Operating Junction and -55 to + 150 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 2.1 R θcs Case-to-Sink, Flat, Greased Surface 0.5 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 1.44 g (oz) www.irf.com 1 5/24/00
Electrical Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 18 V V GE = 0V, I C = 1.0A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.48 V/ C V GE = 0V, I C = 1.0mA 2.16 2.6 I C = 6.5A V GE = 15V V CE(ON) Collector-to-Emitter Saturation Voltage 2.55 I C = 13A See Fig.2, 5 V 2.05 I C = 6.5A, T J = 150 C V GE(th) Gate Threshold Voltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -8.8 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 5.5 8.3 S V CE = 0 V, I C = 6.5A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 150 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 26 38 I C = 6.5A Q ge Gate - Emitter Charge (turn-on) 3.7 5.5 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 15 V GE = 15V t d(on) Turn-On Delay Time 22 t r Rise Time 14 T J = 25 C ns t d(off) Turn-Off Delay Time 1 160 I C = 6.5A, V CC = 480V t f Fall Time 64 96 V GE = 15V, R G = 50Ω E on Turn-On Switching Loss 0.06 Energy losses include "tail" E off Turn-Off Switching Loss 0.08 mj See Fig. 9,, 14 E ts Total Switching Loss 0.14 0.2 t d(on) Turn-On Delay Time 21 T J = 150 C, t r Rise Time 15 I C = 6.5A, V CC = 480V ns t d(off) Turn-Off Delay Time 150 V GE = 15V, R G = 50Ω t f Fall Time 150 Energy losses include "tail" E ts Total Switching Loss 0.34 mj See Fig., 11, 14 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 490 V GE = 0V C oes Output Capacitance 38 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 8.8 ƒ = 1.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 50Ω, (See Fig. 13a) Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com
Load Current ( A ) 25 20 15 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 125 C T sink = 90 C Gate drive as specified Power D issipation = 13W Triangular wave: Clamp voltage: 80% of rated 5 Ideal diodes 0 A 0.1 1 0 00 f, Frequency (khz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) T J = 150 C T J = 25 C V GE = 15V 20µs PULSE WIDTH 1 1 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 150 J C T = 25 J C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 9 11 V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current(A) 14 12 8 6 4 2 V CE, Collector-to-Emitter Voltage(V) 3.0 2.0 V GE = 15V 80 us PULSE WIDTH I C = 13 A I C = 6.5 A I C = 3.25 A 0 25 50 75 0 125 150 T C, Case Temperature ( C) 1.0-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 1 0.1 D = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T J = PDM x Z thjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 00 800 600 400 200 VGE = 0V, f = 1MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 20 16 12 8 4 V CC = 400V I C = 6.5A 0 1 0 V CE, Collector-to-Emitter Voltage (V) 0 0 5 15 20 25 30 Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 0.15 0.14 0.13 V CC = 480V V GE = 15V T = 25 J C I C = 6.5A Total Switching Losses (mj) 1 0.1 R G = Ohm 50Ω V GE = 15V V CC = 480V I C = I C = 13 A 6.5 A I C = 3.25 A 0.12 0 20 30 40 50 R G, Gate Resistance (Ω) 0.01-60 -40-20 0 20 40 60 80 0 120 140 160 T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switching Losses (mj) 0.8 0.6 0.4 0.2 R G = 50Ω Ohm T J = 150 C V CC = 480V V GE = 15V 0.0 0 2 4 6 8 12 14 I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 0 V GE = 20V T = 125 o J C SAFE OPERATING AREA 1 1 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com
50V 00V L V * C D.U.T. 0-480V 480µF 960V R L = 480V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 14b - Switching Loss Waveforms I C 5% % td(on) tr E on t f Eoff t=5µs E ts = (E on +E off ) www.irf.com 7
D 2 Pak Package Outline 1.40 (.055) M AX..54 (.415).29 (.405) - A - 2 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048).16 (.400) REF. 6.47 (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) 1 3 15.49 (.6) 14.73 (.580) 2.79 (.1) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.3) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) REF. 0.25 (.0) M B A M MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 3.81 (.150) 17.78 (.700) 2.08 (.082) 2X 2.54 (.0) 2X D 2 Pak Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S 9246 9B 1M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A 8 www.irf.com
D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL.90 (.429).70 (.421) 16. (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M AX. 60.00 (2.362) M IN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) M AX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.1/01 www.irf.com 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/