RoHS Features High short circuit capability, self limiting short circuit current 3 CHIP(rench+Field Stop technology) (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses Agency Approvals Applications AGENCY AGENCY FILE NUMBER E71639 High frequency switching application Medical applications Motion/servo control UPS systems Module Characteristics ( C Symbol Parameters est Conditions Min yp Max Unit max Max. Junction emperature 15 C op Operating emperature - 125 C stg Storage emperature - 125 C V isol Insulation est Voltage AC, t=1min 3 V Comparative racking Index 35 orque Module-to-Sink Recommended (M6) 3 5 N m orque Module Electrodes Recommended (M5) 2.5 5 N m Weight g Absolute Maximum Ratings ( C Symbol Parameters est Conditions Values Unit S Collector - Emitter Voltage =25 C 1 V V GES Gate - Emitter Voltage ±2 V DC Collector Current C =25 C 1 A C = C 1 A M Repetitive Peak Collector Current t p =1ms A P tot Power Dissipation Per 45 W V RRM Repetitive Reverse Voltage =25 C 1 V I F(AV) C =25 C 1 A Average Forward Current C = C 1 A I FRM Repetitive Peak Forward Current t p =1ms A I 2 t =125 C, t=1ms, V R =V 185 A 2 s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications he products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 1 115
Electrical and hermal Specifications ( C Symbol Parameters est Conditions Min yp Max Unit V GE(th) Gate - Emitter hreshold Voltage =V GE, =4mA 5. 5.8 6.5 V (sat) Collector - Emitter =1A, V GE =15V, =25 C 1.7 V Saturation Voltage =1A, V GE =15V, =125 C 1.9 V ES Collector Leakage Current =1V, V GE =V, =25 C 1 ma =1V, V GE =V, =125 C 5 ma I GES Gate Leakage Current =V,V GE =±15V, =125 C - na R Gint Integrated Gate Resistor 7.5 Ω Q ge Gate Charge V CC =6V, =±15V.9 μc C ies Input Capacitance 7.1 nf =25V, V GE =V, f =1MHz C res Reverse ransfer Capacitance.3 nf t d(on) urn - on Delay ime =25 C 26 ns =125 C 29 ns t r Rise ime V CC =6V =25 C 3 ns =125 C 5 ns =1A t d(off) urn - off Delay ime J =25 C 42 ns =125 C 52 ns R G =3.9Ω t f Fall ime J =25 C 7 ns V GE =±15V =125 C 9 ns urn - on Energy Inductive Load =25 C 7.8 mj =125 C 1 mj urn - off Energy =25 C 8 mj =125 C 1 mj I SC Short Circuit Current t psc 1μS, V GE =15V =125 C,V CC =9V A R thjc Junction-to-Case hermal Resistance (Per ).28 K/W V F Forward Voltage I F =V, =25 C 1.65 V I F =V, =125 C 1.65 V I RRM Max. Reverse Recovery Current I F =1A, V R =6V 1 A Q rr Reverse Recovery Charge di F /dt=-25a/μs 2. μc E rec Reverse Recovery Energy =125 C 9 mj R thjcd Junction-to-Case hermal Resistance (Per ).5 K/W 116 2
Figure 1: ypical Output Characteristics Figure 2: ypical Output characteristics V GE =15V =25 C =125 C V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V =125 C.5 1. 1.5 2. 2.5 3. V 3.5.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. V Figure 3: ypical ransfer characteristics Figure 4: Switching Energy vs. Gate Resistor =2V =25 C =125 C Eon Eoff (mj) 3 25 2 15 1 =6V =1A =125 C 5 5 6 7 8 9 1 11 V GE V 12 4 8 12 16 2 24 28 32 36 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 3 25 =6V =125 C 25 Eon Eoff (mj) 2 15 1 5 15 1 5 =125 C 5 1 A 15 6 1 1 V 1 117 3
Figure 7: Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 12. 1. I F=1A =6V =125 C =125 C Erec (mj) 8. 6. 4. 2. =25 C.6 1.2 1. 8 V F V 2.4 4 8 12 16 2 24 28 32 36 R G Ω Figure 9: Switching Energy vs. Forward Current Figure 1: ransient hermal Impedance 14. 12. =6V =125 C 1 1. Erec (mj) 8. 6. ZthJC (K/W).1 4. 2. 5 1 I F (A) 15.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) 118 4
Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q g Bulk Pack 1 Part Numbering System Part Marking System PRODUC YPE M: MODULE YPE G: VOLAGE RAING 12: 1V CURREN RAING ASSEMBLY SIE WAFER YPE CIRCUI YPE B: 2x(+FWD) PACKAGE YPE 1: 1A S: Package S LO NUMBER Space reserved for QR code 119 5