Low Inductance IGBT Module with 17 mm Height Housing 1 V A Chip features IGBT chip o Trench FS V-Series IGBT (Fuji 6 th gen) o low VCE(sat) value o µs short circuit duration at 15 C o square RBSOA of 2xIC o low EMI FRD chip o fast and soft reverse recovery o low voltage drop Design features copper baseplate Al2O3 DBC substrate ultrasonic welded power terminals improved thermal cycling RoHS compliant Typical application AC motor drives solar inverters air conditioning high power converters and UPS Inverters for wind energy converters Maximum rated values Definition Symbol Conditions Value Unit IGBT Collector-Emitter voltage VCES VGE =. 1 V Collector current (nominal) IC nom A IC 25 Tvj (max) = 175 C; Tc = 25 C. 723 A Collector current (maximum continuous) IC 8 Tvj (max) = 175 C; Tc = 8 C. A Repetitive peak collector current *1 ICRM ICRM = 3 x IC nom; tp = 1 ms. 18 A Short-circuit duration tpsc Tvj = 25 C; VCE = 72 V; RG on = RG off = 1.5 Ω. Tvj = 15 C; VCE = 72 V; RG on = RG off = 1.5 Ω. Gate-Emitter voltage VGES ±2 V Junction operating temperature Tvj (op) -4 +15 ºC Inverse diode Repetitive peak reverse voltage VRRM VGE = V. 1 V Forward current (nominal) IF nom A Forward current (maximum continuous) IF 25 Tvj (max) = 175 C; Tc = 25 C. 657 A IF 8 Tvj (max) = 175 C; Tc = 8 C. A Repetitive peak forward current *1 IFRM IFRM = 3 x IF nom; tp = 1 ms. 18 A Junction operating temperature Tvj (op) -4 +15 C Module Storage temperature Tstg -55 +5 C Isolation voltage Visol AC sin 5 Hz; t = 1 min. V *1 Pulse width and repetition rate should be such that device junction temperature does not exceed maximum Tvj rating 2.3.219 Datasheet _v1.2 page 1 µs
Characteristics Definition Symbol Conditions Value min. typ. max. Unit. IGBT Collector-Emitter saturation voltage VCEsat VGE = +15 V; IС = А; Tvj = 25 C 2.12 2.24 2.5 V tu = µs. Tvj = 15 C 2.71 2.9 3.2 V Gate-Emitter threshold voltage VGE(th) IC = 24 ma; VCE = VGE; Tvj = 25 C; tu = 2 ms. 5.45 5.78 6.15 V Collector-Emitter cut-off current ICES Tvj = 25 C 3.17 3.94 15 µа tu = 5 ms; VGE =. Tvj = 15 C 1.66 2.2 3. mа Gate-Emitter leakage current IGES VCE = ; VGE = ±2 V; Tvj = 25 C; tu = 3 ms. 3.3.7 na Input capacitance Cies - 49.8 - nf VCE = V; VGE = V; Output capacitance Coes - 3.6 - nf f = 1 MHz; Tvj = 25 C. Reverse transfer capacitance Cres - 4.2 - nf Total gate charge QG IC = А; VGE = - 8 15 V. - 554 5 nc Internal gate resistance RGint Tvj = 25 C. - 1.25 - Ω Turn-on delay time td(on) Tvj = 25 C 276 34 38 Tvj = 15 C 368 392 48 ns Tvj = 25 C 3 12 Rise time tri ns Tvj = 15 C 6 9 13 Tvj = 25 C 16 2 28 Turn-on energy Eon IC max = А; mj Tvj = 15 C 3 38 55 Tvj = 25 C 76 78 94 Turn-off delay time td(off) ns Tvj = 15 C 85 87 5 Fall time tfi Tvj = 25 C 112 116 15 Tvj = 15 C 168 184 25 ns Turn-off energy Eoff Tvj = 25 C 62 65 78 Tvj = 15 C 79 83 98 mj Collector-emitter threshold voltage VCE VGE = +15 V; Tvj = 15 C;.82.855.9 V On-State slope resistance (IGBT) rce ICE1 = 15 А; ICE2 = А; tu = µs. 3.9 3.41 3.8 mω Thermal resistance junction to case Rth(j-c) DC; ICE = 55±5 A; Itest = 1.5 A; VGE = +15 V. -.533.58 K/W Inverse diode Forward voltage drop VF IF = А; Tvj = 25 C 2.8 2.21 2.5 V VGE = ; tu = µs. Tvj = 15 C 2.33 2.51 2.85 V Tvj = 25 C 167 175 ns Reverse recovery time trr Tvj = 15 C 267 281 33 ns Tvj = 25 C 351 361 4 A Peak reverse recovery current IrrM Tvj = 15 C 452 461 53 А IC max = А; Tvj = 25 C 34 37 44 µc Reverse recovered charge Qrr Tvj = 15 C 68 72 83 µc Tvj = 25 C 23 25 32 mj Reverse recovery energy Erec Tvj = 15 C 46 49 58 mj Threshold voltage V(T) Tvj = 15 C; VGE = ; ICE1 = 15 А;.842.849.9 V Forward slope resistance rt ICE2 = А; tu = µs 2.47 2.77 3.2 mω Thermal resistance junction to case Rth(JC-D) DC; ICE = 35±5 A; Itest = 1.5 A; VGE = +15 V. -.763.8 К/W 2.3.219 Datasheet _v1.2 page 2
Module Pin resistance RPxy Tvj = 25 C. Parasitic inductance between terminals Thermistor resistance Rt25 Tvj = 25 C Tvj = C Coefficient of temperature sensitivity B 25/5 R 2 = R 25 exp [B 25/5 (1/T 2-1/T 1)], RP/11-3 -.92 1. RP/11-4 -.59 1. LPce - 22 - nh - - - 495 - mω - 3375 - K T 1 = 298.15 K Thermal resistance case to heatsink RthCH per module -.9.14 К/W Mounting torque for screws to heatsink Ms to heatsink M5 3-6 N*m Mounting torque for terminal screws Mt to terminals M6 3-6 N*m Weight W - 36 - g Ω Notes: Insulating material operating temperature 125 C max; Case temperature 125 C max; The recommended operating junction temperature Tvj op = - 4 +15 C. The information given in the datasheet is preliminary. 2.3.219 Datasheet _v1.2 page 3
Chart 1 typ. output characteristic, IGBT. T j = 25 C T j = 15 C 1 1,5 2 2,5 3 V CE [V] VGE = +15 V. DC; 8 VGE = +15 V; Tvj (max) = 15 C. Chart 2 max. rated current vs temperature. Limited by terminals 2 4 6 8 12 14 16 18 T C [ C] E [mj] Chart 3 typ. turn-on/-off energy vs rated current, IGBT. 9 8 7 6 5 4 3 2 E off E on L = 3 µh; Tvj (max) = 15 C. E [mj] Chart 4 typ. turn-on/-off energy vs gate resistance, IGBT. 25 15 5 E off E on 2 4 6 8 12 IC max = А; L = 3 µh; Tvj (max) = 15 C. 2.3.219 Datasheet _v1.2 page 4
t [ns] Chart 5 typ. switching times vs rated current, IGBT. 9 8 t d_off t d_on L = 3 µh; Tvj (max) = 15 C. 1, Chart 7 max. transient thermal impedance. t [ns] Chart 6 typ. switching times vs gate resistance, IGBT. 2 1 t d_off t d_on 2 4 6 8 12 IC max = А; L = 3 µh; Tvj (max) = 15 C. 1 Chart 8 RBSOA. Z thjc [K/W],, Diode IGBT 1 8,1,1,, 1,, t [s] Single pulse; VGE = +15 V. 8 1 1 V CE [V] VСE max = 1 V; IC max = 2*IC nom; 2.3.219 Datasheet _v1.2 page 5
Chart 9 typ. output characteristic, FRD. Chart typ. switching losses vs rated current, FRD. 6 T j = 25 C T j = 15 C E rec [mj] 5 4 3 2 1 1,5 2 2,5 3 V F [V] VGE = +15 V. VСE = V; L = 3 µh; RG on = 1.5 Ω; Tvj (max) = 15 C. Chart 11 typ. switching losses vs gate resistance, FRD. 6 Chart 12 typ. reverse recovered charge vs gate resistance, FRD. 8 5 4 7 6 5 E rec [mj] 3 2 Q rr [μcc] 4 3 2 2 4 6 8 12 VСE = V; IС max = А; L = 3 µh; Tvj (max) = 15 C. 2 4 6 8 12 VСE = V; IС max = А; L = 3 µh; Tvj (max) = 15 C. 2.3.219 Datasheet _v1.2 page 6
Chart 13 typ. switching times vs rated current, FRD. 35 Chart 14 typ. switching times vs gate resistance, FRD. 25 25 t fi t fi 15 t [ns] 15 t [ns] t ri 5 t ri 5 Tvj (max) = 15 C. 2 15 Chart 15 typ. gate charge characteristic. 2 4 6 8 12 IC max = А; Tvj (max) = 15 C. Chart 16 typ. reverse recovery current vs gate resistance FRD. V GE [V] 5 I rrm -5 - IC = А; VGE = - 8 15 V. Q G [nc] 2 4 6 8 12 Tvj (max) = 15 C. 2.3.219 Datasheet _v1.2 page 7
Chart 17 typ. rated current vs frequency. 2 3 4 5 6 7 f SW [khz] Duty cycle 5% 2.3.219 Datasheet _v1.2 page 8
Overall dimensions: Package type DA Part numbering guide MIDA - HB 12 FA - N MIDA IGBT module package type: DA HB 2 switches as Half-Bridge 12 Voltage rating (VCES/) FA IGBT+FRD chipset modification Current Rating N Climatic version: normal climate The information contained herein is protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change datasheet without notice. 2.3.219 Datasheet _v1.2 page 9