FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power Factor Correction(PFC) Switched mode power supply (SMPS) Uninterruptible Power Supply (UPS) BVDSS = 700 V RDS(on) = 0.36 Ω ID = 11.0 A Green Package N-Channel Super Junction MOSFET I-PAK(TO-251) G D S Gate Drain Source D-PAK(TO-252) G S D Absolute Maximum Ratings Thermal Resistance Characteristics TC=25 o C unless otherwise specified Symbol Parameter Value Units VDS Drain-Source Voltage (VGS=0V) 700 V ID Drain Current Continuous (TC = 25 o C) 11 A Drain Current Continuous (TC = 100 o C) 7.0 A IDM(pulse) Drain Current Pulsed * Note 1 33 A VGS Gate-Source Voltage (VDS=0V) ±30 V EAS Single Pulsed Avalanche Energy * Note 2 60 mj IAR Avalanche Current * Note 1 5.5 A EAR Repetitive Avalanche Energy * Note 1 12 mj dv/dt PD Drain Source Voltage Slope, VDS 480V 50 V/ns Reverse Diode dv/dt, VDS 480V 15 V/ns Maximum Power Dissipation (TC = 25 o C) Derate above 25 o C Symbol Parameter Value Units R θjc Junction-to-Case (Maximum) 1.03 R θja Junction-to-Ambient (Maximum) 62 121 W 0.97 W/ o C TJ, TSTG Operating and Storage Temperature Range -55 to +150 o C * Limited by maximum junction temperature o C/W
Electrical Characteristics TA=25 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 ua 2.5 3.0 4.5 V RDS(ON) Static Drain-Source On-Resistance Off Characteristics VGS = 10 V, ID = 7.0 A -- 360 400 m.ohm BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 ua 700 -- -- V IDSS IGSSF IGSSR Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Dynamic Characteristics VDS = 700 V, VGS = 0 V -- -- 1 ua VDS = 560 V, TC=125 o C -- -- 100 ua VGS = 30 V, VDS = 0 V -- -- 100 na VGS = -30 V, VDS = 0 V -- -- -100 na gfs Forward Transconductance VDS = 20V, ID = 7.0A -- 8 -- S RG Intrinsic Gate Resistance f = 1.0 MHz, open drain -- 2 -- ohm Ciss Input Capacitance -- 950 -- pf VDS = 50 V, VGS = 0 V, Coss Output Capacitance -- 75 -- pf f = 1.0 MHz Crss Reverse Transfer Capacitance -- 5 -- pf Qg Total Gate Charge -- 24 36 nc VDS = 560 V, ID = 11.0 A, Qgs Gate-Source Charge -- 6 -- nc VGS = 10 V Qgd Gate-Drain Charge -- 8.5 -- nc Switching Characteristics td(on) Turn-On Time -- 9 -- ns tr Turn-On Rise Time VDS = 380 V, ID = 5.5 A, -- 4 -- ns td(off) Turn-Off Delay Time RG = 6.8 Ω, VGS = 10V -- 40 60 ns tf Turn-Off Fall Time -- 4.5 7 ns Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current -- -- 11 ISM Pulsed Source-Drain Diode Forward Current -- -- 33 A VSD Source-Drain Diode Forward Voltage IS = 11.0 A, VGS = 0 V -- 0.9 1.2 V trr Reverse Recovery Time IS = 11.0 A -- 245 -- ns Qrr Reverse Recovery Charge di/dt = 100 A/μs -- 2.4 -- μc Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. VDD=50V, RG=25, Starting T J =25 C
Typical Characteristics ID, Drain Current [A] Top : Bottom : Figure1. On Region Characteristics VGS 20.0V 15.0V 10.0V 9.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V VDS, Drain-Source Voltage [V] 1. 250us Pulse Test 2. TC = 25 o C ID, Drain Current [A] 10 2 Figure 2. Transfer Characteristics 150 o C 25 o C 2 3 4 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] 1. VDS = 20V 2. 250us Pulse Test Figure 3. Static Drain-Source On Resistance Figure 4. Body Diode Forward Voltage 1.0 Drain-Source On-Resistance [ohm] 0.8 0.6 0.4 0.2 IDR, Reverse Drain Current [A] 150 o C 25 o C 1. TJ = 25 o C 0.0 0 5 5 20 25 30 35 1. VGS = 0V 2. 250us Pulse Test 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ID, Drain Durrent [A] VSD, Source-Drain Voltage [V] Figure 5. Capacitance Charateristics Figure 6. Gate Charge Characteristics 10 4 Ciss Ciss = Cgs + Cgd (Cds=Shorted) Coss = Cds + Cgd Crss = Cgd 12 10 VDS = 560V Capacitance [pf] 10 3 10 2 Coss Crss VGS, Gate-Source Voltage [V] 8 6 4 VDS = 140V VDS = 350V 1. VGS = 0V 2. f = 1 MHz 2 # Note 1. ID = 11A 0 0 3 6 9 12 15 18 21 24 27 VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nc]
Typical Characteristics (continued) BVdss (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 0.8 Figure 7. Breakdown Voltage Variation vs. Temperature -50 0 50 100 150 TJ, Junction Temperature [ o C] 1. VGS = 0V 2. ID = 250uA Rds(on) (Normalized) Drain-Source On-Resistance 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Figure 8. On-Resistance Variation vs. Temperature -50 0 50 100 150 TJ, Junction Temperature [ o C] 1. VGS = 10 V 2. ID = 7.0 A 10 2 Figure 9. Safe Operation Area Operation in this area is limited by RDS(ON) 12 10 Figure 10. Maximum Drain Current vs. Case Temperature 10us ID, Drain Current [A] 1. TC=25 o C 100us 1ms DC ID, Drain Current [A] 8 6 4 2 1. TJ=150 o C 3. Single Pulse 10-2 10 2 10 3 0 25 50 75 100 125 150 175 VDS, Drain-Source Voltage [V] TC, Case Temperature [ o C] Figure 11. Transient Thermal Response Curve D = 0.5 Thermal Response 0.2 0.1 0.05 0.02 0.01 1. ZTJC(t) = 1.03 o C/W Max. 2. Duty Factor, D = t1/t2 3. TJM - TC = PDM * ZTJC(t) PDM t1 10-2 Single Pulse t2 10-5 10-4 10-3 10-2 Square Wave Pulse Duration [sec]
Characteristics Test Circuit & Waveform 10V R G R L DUT ( 0.5 rated ) V in 10% 90% t d(on) Switching Time Test Circuit & Waveforms t on t r t d(off) t off tf 12V 200nF 50KΩ 300nF Same Type as DUT V GS 10V Q g V GS Q gs Q gd 1mA DUT Charge Gate Charge Test Circuit & Waveform L 1 E AS = ---- L L I 2 2 AS BS -------------------- BS -- I D BS I AS R G I D (t) 10V DUT (t) t p Time Unclamped Inductive Switching Test Circuit & Waveforms
Characteristics Test Circuit & Waveform (continued) DUT + I S Driver _ L R G Same Type as DUT V GS dv/dt controlled by RG I S controlled by pulse period V GS ( Driver ) D = Gate Pulse Width -------------------------- Gate Pulse Period 10V I FM, Body Diode Forward Current I S ( DUT ) di/dt I RM Body Diode Reverse Current ( DUT ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Test Circuit & Waveforms
Package Dimension 6.6±0.076 5.3±0.05 3.81 I-PAK(TO-251) Φ2.5 6.15±0.076 0.868±0.05 2.3±0.076 0.508±0.05 Max 0.10 0.10~0.15 5 o Z 5 o 5 o 2.2±0.2 3-0.80±0.05 0.85±0.05 7.0±0.1 1.00±0.05 2.286 2.286 0.508±0.05 3 o
Package Dimension 6.6±0.15 5.3±0.10 D-PAK(TO-252) 6.15±0.15 0.868±0.10 0.508±0.05 2.3±0.15 Z 1.00±0.15 0.9±0.15 0.8±0.1 2.7±0.1 0.508±0.05 0.10±0.05 2-0.8±0.1 2.286 2.286