N-channel 20 V, Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package. Order code Marking Package Packaging

Similar documents
N-channel 100 V, Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description. Table 1.

N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging

N-channel 100 V, Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package. Features. Order code. Description.

STD25NF10LA. N-channel 100 V, Ω, 25 A DPAK STripFET II Power MOSFET. Features. Applications. Description

N-channel 100 V, Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package 21 A 5 W. Order code Marking Package Packaging

STL60N3LLH5. N-channel 30 V, Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET. Features. Application. Description.

N-channel 30 V, Ω typ., 160 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

N-channel 30 V, Ω typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6. Features. Description.

STS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description

Dual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging

Obsolete Product(s) - Obsolete Product(s)

STB270N4F3 STI270N4F3

N-channel 20 V, Ω typ., 5 A STripFET V Power MOSFET in SOT-23 and SOT23-6L packages. Order codes V DS R DS(on) max I D P TOT 4

Obsolete Product(s) - Obsolete Product(s)

I D. Order codes Marking Package Packaging. STP80NF10 TO-220 Tube STB80NF10T4 D²PAK Tape and reel

STL75N8LF6. N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET. Features. Applications. Description

N-channel 30 V Ω - 25 A - PowerFLAT (6x5) STripFET III Power MOSFET I D. Order code Marking Package Packaging

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S

Features. Application. Description. Table 1. Device summary. Order code Marking Package Packaging. STP80NF12 P80NF12 TO-220 Tube

Obsolete Product(s) - Obsolete Product(s)

STB120N10F4, STP120N10F4

Features. Description. Table 1: Device summary Order code Marking Package Packing STL90N10F7 90N10F7 PowerFLAT 5x6 Tape and reel

N-channel 100 V, Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description.

STN4NF06L. N-channel 60 V, 0.07 Ω, 4 A SOT-223 STripFET II Power MOSFET. Features. Applications. Description

Contents STL13NM60N Contents 1 Electrical ratings Electrical characteristics

STB80NF55-08T4 STP80NF55-08, STW80NF55-08

N-channel 30 V, Ω typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package. Features. Description. Table 1.

Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package. Features. Description. Table 1.

Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features

N-channel 100 V, Ω typ., 4 A STripFET VII DeepGATE Power MOSFET in a PowerFLAT 2x2 package. Features. Description. Table 1.

STF20NK50Z, STP20NK50Z

STI260N6F6 STP260N6F6

2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram

STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description

STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4

N-channel 30 V, Ω typ., 10 A, P-channel 30 V, Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package. Features STL40C30H3LL

STB160N75F3 STP160N75F3 - STW160N75F3

STS10N3LH5. N-channel 30 V, Ω, 10 A, SO-8 STripFET V Power MOSFET. Features. Application. Description

STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description

STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

N-channel 40 V, 0.03 Ω typ., 30 A, STripFET II Power MOSFET in a DPAK package. Order code Marking Package Packaging

STP80NF10FP. N-channel 100V Ω - 38A - TO-220FP Low gate charge STripFET II Power MOSFET. General features. Description

STD65N55LF3 Features Order code DS(on) DSS max. DPAK Application Description Figure 1. Internal schematic diagram

Obsolete Product(s) - Obsolete Product(s)

Features. Description. Table 1. Device summary. Order code Marking Package Packaging. STB100N6F7 100N6F7 D²PAK Tape and Reel

N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1

STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram

Obsolete Product(s) - Obsolete Product(s)

STP80NF12. N-channel 120 V, Ω, 80 A, TO-220 STripFET II Power MOSFET. Features. Application. Description

STD30NF03L STD30NF03L-1

STF40NF03L STP40NF03L

STB16NF06L. N-channel 60V Ω - 16A - D 2 PAK STripFET Power MOSFET. General features. Description. Internal schematic diagram.

STB55NF06, STP55NF06, STP55NF06FP

STH160N4LF6-2. N-channel 40 V, mω typ., 120 A, STripFET VI DeepGATE Power MOSFET in a H²PAK-2 package. Features. Applications.

STB21NK50Z. N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET. Features. Applications. Description

Automotive-grade dual N-channel 100 V, 25 mω typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT 5x6 double island package.

STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND

Obsolete Product(s) - Obsolete Product(s)

STP36NF06 STP36NF06FP

STB160N75F3 STP160N75F3 - STW160N75F3

N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package. Features. Description.

Obsolete Product(s) - Obsolete Product(s)

Features. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary

STP4NK60Z, STP4NK60ZFP

STP90NF03L STB90NF03L-1

STP20NM65N STF20NM65N

Automotive-grade dual N-channel 60 V, Ω typ., 5 A STripFET II Power MOSFET in an SO-8 package. Features. Description. Table 1.

N-channel 950 V Ω - 7 A - TO-247 Zener-protected SuperMESH TM Power MOSFET. Order code Marking Package Packaging. STW9NK95Z 9NK95Z TO-247 Tube

N-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package. Features. Description. Table 1.

STB30NF10 STP30NF10 - STP30NF10FP

Features. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging

STP36NF06L STB36NF06L

N-channel 400 V, 3 Ω typ., 1.8 A SuperMESH3 Power MOSFET in a SOT-223 package. Features. Application. Description. AM01476v1. Table 1.

N-channel 60 V, 6.8 mω typ., 40 A STripFET F7 Power MOSFET in a DPAK. Order code V DS R DS(on ) max. I D

IRF740. N-channel 400V Ω - 10A TO-220 PowerMESH II Power MOSFET. General features. Description. Internal schematic diagram.

Obsolete Product(s) - Obsolete Product(s)

STD2NC45-1 STQ1NC45R-AP

Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness

STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N

STB120N4LF6 STD120N4LF6

Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features

STP12NK60Z STF12NK60Z

Features. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube

STFW3N150, STH3N150-2, STP3N150, STW3N150

STH310N10F7-2, STH310N10F7-6

STW11NK100Z STW11NK100Z

N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z

Obsolete Product(s) - Obsolete Product(s)

STB7ANM60N, STD7ANM60N

STW43NM60ND. N-channel 600 V, Ω, 35 A TO-247 FDmesh Power MOSFET (with fast diode) Features. Application. Description

N-channel 100 V, Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package. Features. Description. Table 1.

STB18NM80, STF18NM80, STP18NM80, STW18NM80

N-channel 450 V Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package. Features. Description.

STB11NK50Z - STP11NK50ZFP STP11NK50Z

STP70NS04ZC. N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET Power MOSFET. Features. Description. Internal schematic diagram.

STS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features

STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z

Transcription:

N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V DSS R DS(on) max I D 20 V < 0.003 Ω 28 A Improved die-to-footprint ratio Very low profile package Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device Applications Switching applications 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Table 1. Device summary Order code Marking Package Packaging 120N2VH5 PowerFLAT 5x6 Tape and reel March 2012 Doc ID 15603 Rev 2 1/18 www.st.com 18

Contents Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................ 6 3 Test circuits.............................................. 8 4 Package mechanical data..................................... 9 5 Packaging mechanical data.................................. 15 6 Revision history........................................... 17 2/18 Doc ID 15603 Rev 2

Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 20 V V GS Gate-source voltage ± 8 V I (1) D Drain current (continuous) at T C = 25 C 120 A I (1) D Drain current (continuous) at T C = 100 C 75 A (2) I D Drain current (continuous) at T pcb = 25 C 28 A (2),(3) I DM Drain current (pulsed) 112 A P (1) TOT Total dissipation at T C = 25 C 80 W (2) P TOT Total dissipation at T pcb = 25 C 4 W T j T stg Derating factor (2) 0.03 W/ C Operating junction temperature storage temperature 1. The value is rated according to Rthj-case 2. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec 3. Pulse width limited by safe operating area - 55 to 150 C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max. 1.56 C/W (1) R thj-pcb Thermal resistance junction-pcb max. 31.25 C/W 1. When mounted on FR-4 board of 1in², 2oz Cu. t < 10 sec Table 4. Avalanche characteristics Symbol Parameter Max value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max) Single pulse avalanche energy (starting T j = 25 C, I D = I AR, V DD = 14 V) 20 A 300 mj Doc ID 15603 Rev 2 3/18

Electrical characteristics 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate-body leakage current (V DS = 0) I D = 1 ma, V GS = 0 20 V V DS = 20 V V DS =20 V, T C = 125 C 1 10 µa µa V GS = ± 8 V ±100 na V GS(th) Gate threshold voltage V DS = V GS, I D = 250 µa 0.70 V R DS(on) Static drain-source on resistance V GS = 4.5 V, I D = 14 A V GS = 2.5 V, I D = 14 A 0.002 0.0028 0.003 0.004 Ω Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS = 15 V, f = 1 MHz, V GS = 0-4660 870 130 - pf pf pf t d(on) t r t d(off) t f Turn-on delay time Rise time Turn-off delay time Fall time V DD = 10 V, I D = 14 A R G =4.7 Ω V GS = 4.5 V (see Figure 13) - 21 60 76 55 - ns ns ns ns Q g Q gs Q gd Total gate charge Gate-source charge Gate-drain charge V DD = 10 V, I D = 28 A, V GS = 2.5 V (see Figure 14) - 29 9.8 13 - nc nc nc 4/18 Doc ID 15603 Rev 2

Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD I SDM (1) V SD (2) t rr Q rr I RRM t rr Q rr I RRM Source-drain current Source-drain current (pulsed) - 28 112 Forward on voltage I SD = 28 A, V GS = 0-1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current I SD = 28 A, di/dt = 100 A/µs, V DD = 16 V (see Figure 15) I SD = 28 A, di/dt = 100 A/µs, V DD = 16 V, T j = 150 C (see Figure 15) - - 34 30 1.4 35 31 1.8 A A ns nc A ns nc A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 15603 Rev 2 5/18

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on resistance 6/18 Doc ID 15603 Rev 2

Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 15603 Rev 2 7/18

Test circuits 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T. 2200 μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit 25 Ω G A D D.U.T. S B A FAST DIODE B A B D L=100μH 3.3 1000 μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/18 Doc ID 15603 Rev 2

Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15603 Rev 2 9/18

Package mechanical data Table 8. Dim. PowerFLAT 5x6 type C-B mechanical data mm Min. Typ. Max. A 0.80 0.83 0.93 A1 0 0.02 0.05 A3 0.20 b 0.35 0.40 0.47 D 5.00 D1 4.75 D2 4.15 4.20 4.25 E 6.00 E1 5.75 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e 1.27 L 0.70 0.80 0.90 10/18 Doc ID 15603 Rev 2

Package mechanical data Figure 19. PowerFLAT 5x6 type C-B drawing Bottom View e/2 e 1 PIN 1 IDENTIFICATION EXPOSED PAD E4 E2 b 8x D2/2 D2 Top View D/2 E/2 E1 E PIN 1 IDENTIFICATION 1 D1 D 0.1 C A3 SEATING PLANE A A1 C 0.08 C 7286463_Rev_H Doc ID 15603 Rev 2 11/18

Package mechanical data Table 9. Dim. PowerFLAT 5x6 type S-C mechanical data mm Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 0.25 b 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 12/18 Doc ID 15603 Rev 2

Package mechanical data Figure 20. PowerFLAT 5x6 type S-C mechanical data Doc ID 15603 Rev 2 13/18

0.95 0.98 6.26 3.86 4.33 Package mechanical data Figure 21. PowerFLAT 5x6 recommended footprint (dimensions in mm) 5.35 4.41 1.27 0.62 Footprint 14/18 Doc ID 15603 Rev 2

REF.R0.50 Packaging mechanical data 5 Packaging mechanical data Figure 22. PowerFLAT 5x6 tape T (0.30 ±0.05) Do Ø1.55±0.05 Y P 2 2.0±0.1 (I) P 0 4.0±0.1 (II) E1 1.75±0.1 C L Bo (5.30±0.1) D1 Ø1.5 MIN. REF 0.20 F(5.50±0.1)(III) W(12.00±0.3) Y Ko (1.20±0.1) P1(8.00±0.1) Ao(6.30±0.1) SECTION Y-Y (I) Measured from centerline of sprocket hole to centerline of pocket. (II) Cumulative tolerance of 10 sprocket holes is ± 0.20. (III) Measured from centerline of sprocket hole to centerline of pocket. Base and bulk quantity 3000 pcs All dimensions are in millimeters 8234350_Tape_rev_C Figure 23. PowerFLAT 5x6 package orientation in carrier tape. Doc ID 15603 Rev 2 15/18

Packaging mechanical data Figure 24. PowerFLAT 5x6 reel R0.60 PART NO. 1.90 2.50 W3 11.9/15.4 W2 18.4 (max) R25.00 4.00 ØN 178(±2.0) ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES A 330 (+0/-4.0) 2.50 77 ESD LOGO 06 PS ØA W1 12.4 (+2/-0) 128 R1.10 Ø21.2 2.20 13.00 All dimensions are in millimeters CORE DETAIL 8234350_Reel_rev_C 16/18 Doc ID 15603 Rev 2

Revision history 6 Revision history Table 10. Document revision history Date Revision Changes 20-Apr-2009 1 First issue. 01-Mar-2012 2 Document status promoted from preliminary data to datasheet Section 4: Package mechanical data has been modified: Table 8: PowerFLAT 5x6 type C-B mechanical data, Table 9: PowerFLAT 5x6 type S-C mechanical data, Figure 19: PowerFLAT 5x6 type C-B drawing, Figure 20: PowerFLAT 5x6 type S-C mechanical data and Figure 21: PowerFLAT 5x6 recommended footprint (dimensions in mm) have been added. Doc ID 15603 Rev 2 17/18

Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 18/18 Doc ID 15603 Rev 2