SPN125T06. N-Channel Enhancement Mode MOSFET

Similar documents
SPN166T06 N-Channel Enhancement Mode MOSFET

SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN166T04 N-Channel Enhancement Mode MOSFET

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool

SPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN166T04 N-Channel Enhancement Mode MOSFET

SPN65T10. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control

PIN CONFIGURATION(SOP 8P)

SPN70T10. N-Channel Enhancement Mode MOSFET

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool

N-Channel Enhancement Mode MOSFET

SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter

SPN9971. N-Channel Enhancement Mode MOSFET. Power Management in Note book Powered System DC/DC Converter Load Switch

SPN6242. N-Channel Enhancement Mode MOSFET

SPN6338. Dual N-Channel Enhancement Mode MOSFET

SPN2302. N-Channel Enhancement Mode MOSFET

Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPN8822. Common-Drain Dual N-Channel Enhancement Mode MOSFET

SPC4567W. N & P Pair Enhancement Mode MOSFET

SPN2304. N-Channel Enhancement Mode MOSFET

PIN CONFIGURATION(SOT-23-3L)

N-Channel Enhancement Mode MOSFET

SPC1810. N & P Pair Enhancement Mode MOSFET

PIN CONFIGURATION(SOT-23)

SPC4516B. N & P Pair Enhancement Mode MOSFET

SPN6435. Dual N-Channel Enhancement Mode MOSFET

SPN7002. N-Channel Enhancement Mode MOSFET

SPP1433. P-Channel Enhancement Mode MOSFET

SPN7002. N-Channel Enhancement Mode MOSFET

SPC4567W. N & P Pair Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

SPP2301D. P-Channel Enhancement Mode MOSFET

SPP2303. P-Channel Enhancement Mode MOSFET

SPP3413. P-Channel Enhancement Mode MOSFET

SPC6605. N & P Pair Enhancement Mode MOSFET

Dual P-Channel Enhancement Mode MOSFET

SPP2341. P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET

PIN CONFIGURATION(SOT-23)

SPP2305. P-Channel Enhancement Mode MOSFET

N & P Pair Enhancement Mode MOSFET

PIN CONFIGURATION(SOT-563/SC-89-6L)

SPC6801. P-Channel Trench MOSFET with Schottky Diode. Battery Powered System DC/DC Converter Load Switch Cell Phone

SPC4703. P-Channel Trench MOSFET with Schottky Diode. Battery Powered System DC/DC Buck Converter Load Switch Cell Phone

AM8205 MOSFET+SCHOTTKY DIODE 20V DUAL N-CHANNEL ENHANCEMENT MODE

STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

AM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.

Pin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

Alfa-MOS Technology. AFC V N & P Pair Enhancement Mode MOSFET. General Description. Pin Description ( DFN5X6-8L ) Application

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION

Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE

P-Channel Enhancement Mode MOSFET

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h

AM V N-CHANNEL ENHANCEMENT MODE MOSFET

Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case

N-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A

Complementary MOSFET

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ

SP6038 High Performance Synchronous Rectifying Converter

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

PKP3105. P-Ch 30V Fast Switching MOSFETs

20V P-Channel Enhancement-Mode MOSFET

Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V

AM9435 MOSFET -30V P-CHANNEL ENHANCEMENT MODE

SP6033G High Performance Synchronous Rectifying Converter

AM3416 MOSFET N-CHANNEL ENHANCEMENT MODE MOSFET

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C

SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

FKD4903. N-Ch and P-Ch Fast Switching MOSFETs

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S

800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

400V/18A POWER MOSFET (N-Channel) MSU18N40T. 400V/18A Power MOSFET (N-Channel) General Description. Features. Pin Configuration and Symbol TO-220

PFU70R360G / PFD70R360G

50V/5.3A P-Channel Power MOSFET MSS5P05D / MSS5P05U. General Description. Features. Pin Configuration DPAK (TO-252) IPAK (TO-251) MSS5P05U MSS5P05D

Tc=25 C 3.5 W When mounted on ceramic substrate (600mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg - 55 to +150 C

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25

Transcription:

DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS AC/DC Synchronous Rectifier Load Switch UPS Motor Control Power Tool FEATURES 60V/125A, RDS(ON)=4.3mΩ@VGS=10V 60V/125A, RDS(ON)=5.6mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L /PPAK5x6-8L/TO-263-2L package design 2017/3/22 Ver 4 Page 1

PIN CONFIGURATION TO-220 TO-220F TO-251S-3L TO-252-2L TO-263-2L PPAK5x6 PART MARKING 2017/3/22 Ver 4 Page 2

T0-220/TO-220F/TO-251/TO-252/TO-263 PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 D Drain 3 S Source PPAK5x6 PIN DESCRIPTION Pin Symbol Description 1 S Source 2 S Source 3 S Source 4 G Gate 5 D Drain 6 D Drain 7 D Drain 8 D Drain ORDERING INFORMATION Part Number Package Part Marking T220TGB TO-220-3L T220FTGB TO-220F-3L ST251TGB TO-251S-3L T252RGB TO-252-2L T262RGB TO-263-2L DN8RGB PPAK5x6-8L T220TGB : Tube ; Pb Free ; Halogen Free T220FTGB : Tube ; Pb Free ; Halogen Free ST251TGB : Tube ; Pb Free ; Halogen Free T252RGB : Tape&Reel ; Pb Free ; Halogen Free T262RGB : Tape&Reel ; Pb Free ; Halogen Free DN8RGB : Tape&Reel ; Pb Free ; Halogen - Free 2017/3/22 Ver 4 Page 3

ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate Source Voltage VGSS ±20 V Continuous Drain Current(Silicon Limited) Tc=25 ID 125 Tc=70 88 A Pulsed Drain Current IDM 400 A Power Dissipation@ Tc=25 TO-220/TO-263 Power Dissipation@ Tc=25 TO-251S/TO-252/TO-220F PD 93 Power Dissipation@ Tc=25 PPAK5x6 83 Avalanche Energy with Single Pulse ( TC=25, L=0.1mH.) EAS 219 mj Operating Junction Temperature TJ -55/150 Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Case (TO-220/TO-220F/TO-263) RθJC 1.2 /W Thermal Resistance-Junction to Case (TO-251S/TO-252) RθJC 1.35 /W Thermal Resistance-Junction to Case (PPAK5x6) RθJC 1.5 /W Note : The maximum current rating is package limited at 120A for TO-263-2L and TO-220-3L The maximum current rating is package limited at 78A for TO-220F-3L The maximum current rating is package limited at 70A for TO-251S-3L and TO-252-2L The maximum current rating is package limited at 80A for PPAK5x6-8L 104 W 2017/3/22 Ver 4 Page 4

ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Static Parameter Symbol Conditions Min. Typ Max. Unit Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 60 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 2.4 Gate Leakage Current IGSS VDS=0V,VGS=±20V ±100 na VDS=48V, VGS=0V 1 TJ = 25 C Zero Gate Voltage Drain Current IDSS ua VDS=48V, VGS=0V 100 TJ = 100 C Drain-Source On-Resistance RDS(on) VGS=10V,ID=20A 3.6 4.3 VGS=4.5V,ID=20A 4.5 5.6 Forward Transconductance gfs VDS=5V,ID=20A 75 S Gate Resistance RG VGS=0V,VDS=Open, f=1mhz 1.6 Ω Diode Forward Voltage VSD IS=20A,VGS =0V 1.2 V Dynamic Total Gate Charge (10V) Qg Total Gate Charge (4.5V) Qg VDS=30V, VGS=10V 27 Gate-Source Charge Qgs ID = 20A 14 Gate-Drain Charge Qgd 6 Input Capacitance Ciss 3800 Output Capacitance Coss VDS=30V, VGS=0V f=1mhz 520 Reverse Transfer Capacitance Crss 50 Turn-On Time Turn-Off Time td(on) tr VDD=30V, ID=20A 36 td(off) VGEN=10V, RG=10Ω 55 54 16 tf 35 V mω nc pf ns 2017/3/22 Ver 4 Page 5

TYPICAL CHARACTERISTICS Fig. 1 Output Characteristics Fig. 2 Transfer Characteristics Fig. 3 On Resistances vs Drain Current Fig. 4 Capacitance Fig. 5 Gate Charge Fig. 6 On- Resistance vs Junction Temperature 2017/3/22 Ver 4 Page 6

TYPICAL CHARACTERISTICS 2017/3/22 Ver 4 Page 7

TO-220-3L PACKAGE OUTLINE SYMBOL MIN NOM MAX A 4.40 4.50 4.60 A1 1.27 1.30 1.33 A2 2.30 2.40 2.50 b 0.70-0.90 b1 - - 1.40 c 0.45 0.50 0.50 D 15.30 15.70 16.10 D1 9.10 9.20 9.30 D2 13.10-13.70 E 9.70 9.90 10.20 E1 7.80 8.00 8.20 e e1 2.54BSC 5.08BSC H1 6.30 6.50 6.70 L 12.78 13.08 13.38 L1 - - 3.50 L2 φ P 3.55 4.6REF 3.60 3.65 Q 2.73-2.87 θ 1 1 3 5 2017/3/22 Ver 4 Page 8

TO-220F-3L PACKAGE OUTLINE SYMBOL MIN NOM MAX A 4.50 4.70 4.83 A1 2.34 2.54 2.74 A2 A3 2.56 0. 7REF 2.76 2.93 b 0.70 -- 0.90 b1 1.18 -- 1.40 b2 -- -- 1.47 c 0.45 0.50 0.60 D 15. 67 15. 87 16. 07 D1 15.55 15.75 15.95 D2 9.60 9.80 10.00 E 9.96 10.16 10.36 e H1 6.48 2. 54BSC 6.68 6.88 L 12. 68 12. 98 13. 28 L1 - - 3.50 L2 φ P 3.08 6. 50REF 3.18 3.28 Q 3.20-3.40 θ 1 1 3 5 2017/3/22 Ver 4 Page 9

PPAK5x6-8L PACKAGE OUTLINE 2017/3/22 Ver 4 Page 10

TO-251S-3L PACKAGE OUTLINE SYMBOL MIN NOM MAX A 2.20 2.30 2.40 A2 0.86 1.01 1.16 b 0.66-0.86 b2 0.66 -- 0.96 b3 5.10 5.28 5.46 c 0.46 -- 0.60 c2 0.47 -- 0.60 D 6.00 6.10 6.20 D1 E 6.40 5.35REF 6.60 6.80 E1 e H 9.80 4.83REF 2.3REF 10.40 11.00 L1 L2 L3 0.90 3.50REF 0.508BSC -- 1.25 L5 0.15 -- 0.75 L6 θ 1 5 1.80REF 7 9 θ 2 5 7 9 2017/3/22 Ver 4 Page 11

TO-252-2L PACKAGE OUTLINE SYMBOL MIN NOM MAX A 2.20 2.30 2.40 A1 0.00 -- 0.15 A2 0.90 1.01 1.10 b 0.72-0.85 b2 0.72 -- 0.90 b3 5.13 5.33 5.46 c 0.47 -- 0.60 c2 0.47 -- 0.60 D 6.00 6.10 6.20 D1 5.25 -- -- E 6.40 6.60 6.80 E1 4.70 -- -- e H 9.80 2.3REF 10.10 10.40 L 1.40 1.60 1.80 L1 L2 L3 0.90 2.90REF 0.508BSC -- 1.25 L4 0.60 0.80 1.00 L5 0.15 -- 0.75 L6 θ 0 1.80REF 3 8 θ 1 5 7 9 θ 2 5 7 9 2017/3/22 Ver 4 Page 12

TO-263-2L PACKAGE OUTLINE SYMBOL MIN NOM MAX A 4.40 4.50 4.60 A1 0.00 0.10 0.25 A2 2.20 2.40 2.60 b 0.71-0.91 b2 1.17 -- 1.37 c 0.47 -- 0.60 c2 1.25 1.30 1.35 D 9.10 9.20 9.30 D1 8.00 -- -- E 9.80 9.90 10.00 E1 7.80 -- -- e H 14.90 2.54BSC 15.30 15.70 L 2.00 2.30 2.60 L1 1.12 1.27 1.42 L2 -- -- 1.75 L3 L4 θ 0 0.25BSC 4.60 REF -- 8 θ 1 1 3 5 2017/3/22 Ver 4 Page 13

Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. The SYNC Power logo is a registered trademark of SYNC Power Corporation 2017 SYNC Power Corporation Printed in Taiwan All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 http://www.syncpower.com 2017/3/22 Ver 4 Page 14