NPN Silicon RF Transistor For high gain low noise amplifiers For oscillators up to GHz Noise figure F =. at. GHz outstanding G ms = at. GHz Transition frequency f T = 5 GHz Gold metallization for high reliability SIEGET 5 GHz ft - Line Pb-free (RoHS compliant) package ) Qualified according AEC Q ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package AMs =B =E =C =E - - SOT Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO V T A > C T A C.5. Collector-emitter voltage V CES 5 Collector-base voltage V CBO 5 Emitter-base voltage V EBO.5 Collector current I C 5 ma Base current I B Total power dissipation ) T S 7 C P tot mw Junction temperature T j 5 C Ambient temperature T A -5... 5 Storage temperature T stg -5... 5 Pb-containing package may be available upon special request T S is measured on the collector lead at the soldering point to the pcb 9--
Thermal Resistance Parameter Symbol Value Unit Junction - soldering point ) R thjs K/W Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V (BR)CEO.5 5 - V I C = ma, I B = Collector-emitter cutoff current I CES - - µa V CE = 5 V, V BE = Collector-base cutoff current I CBO - - na V CB = 5 V, I E = Emitter-base cutoff current I EBO - - µa V EB = V, I C = DC current gain I C = ma, V CE = V, pulse measured h FE 95 - For calculation of R thja please refer to Application Note Thermal Resistance 9--
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency f T 5 - GHz I C = ma, V CE = V, f = GHz Collector-base capacitance V CB = V, f = MHz, V BE =, emitter grounded C cb -. pf Collector emitter capacitance V CE = V, f = MHz, V BE =, base grounded Emitter-base capacitance V EB = V, f = MHz, V CB =, collector grounded C ce -.7 - C eb - 5 - Noise figure F -. - I C = 5 ma, V CE = V, f =. GHz, Z S = Z Sopt Power gain, maximum stable ) I C = ma, V CE = V, Z S = Z Sopt, Z L = Z Lopt, f =. GHz G ms - - Insertion power gain V CE = V, I C = ma, f =. GHz, Z S = Z L = 5 Ω Third order intercept point at output ) V CE = V, I C = ma, f =. GHz, Z S = Z L = 5 Ω Compression point at output I C = ma, V CE = V, Z S = Z L = 5 Ω, f =. GHz S 7 - IP - - m P - - - G ms = S / S IP value depends on termination of all intermodulation frequency components. Termination used for this measurement is 5Ω from. MHz to GHz 9--
Simulation Data For SPICE-model as well as for S-parameters including noise parameters refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest version before actually starting your design. The simulation data have been generated and verified up to GHz using typical devices. The nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. 9--
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) mw K/W Ptot RthJS...5...5 D = C 5 T S Permissible Pulse Load P totmax /P totdc = ƒ(t p ) -7 - -5 - - - s Collector-base capacitance C cb = ƒ(v CB ) f = MHz t p. Ptotmax/PtotDC - D =.5...5.. Ccb pf...5-7 - -5 - - - s t p V V CB 9-- 5
Transition frequency f T = ƒ(i C ) f = GHz V CE = parameter in V Power gain G ma, G ms, S ² = ƒ (f) V CE = V, I C = ma GHz to.5.75 G ms ft G [] G ma S 5 5 5 ma I C Power gain G ma, G ms = ƒ (I C ) V CE = V f = parameter in GHz.9 5 f [GHz] Power gain G ma, G ms = ƒ (V CE ) I C = ma f = parameter in GHz.9 G.. 5 G.. 5 ma I C.5.5.5 V.5 V CE 9--
Noise figure F = ƒ(i C ) V CE = V, Z S = Z Sopt Noise figure F = ƒ(i C ) V CE = V, f =. GHz F.5 F.5.5 f = GHz f = 5 GHz f = GHz f = GHz f =. GHz f =. GHz f =.9 GHz ZS = 5 Ohm ZS = ZSopt ma I C ma I C Noise figure F = ƒ(f) V CE = V, Z S = Z Sopt Source impedance for min. noise figure vs. frequency V CE = V, I C = 5 ma / ma +j5 +j5 +j F +j.ghz.ghz.5 GHz 5 5.9GHz GHz GHz IC = ma IC = 5 ma -j 5GHz GHz -j5 -j -j5 GHz f 9-- 7
Package SOT Package Outline ±... MAX...9 ±. A. +. -.5 x. M +.. -.5. ±.. MIN.. M Foot Print. Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel.... A +. -.5.5 ±..5.9 Manufacturer Pin Pin.5. 9--
Edition 9-- Published by Infineon Technologies AG 5579 Neubiberg, Germany Infineon Technologies AG 9. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 9 9--