Insulated Gate Bipolar Transistor (Ultrafast IGBT), A SOT-7 PRIMARY CHARACTERISTICS V CES V I C DC A at 8 C V CE(on) typical at A, 5 C.93 V Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single switch with AP diode FEATURES Trench IGBT high speed Square RBSOA HEXFRED low Q rr, low switching energy Positive V CE(on) temperature coefficient Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see /doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting on heatsink Plug-in compatible with other SOT-7 packages Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () C T C = 9 C 3 Pulsed collector current I CM 4 A T C = 5 C 87 Clamped inductive load current I LM 5 Gate to emitter voltage V GE ± V T C = 5 C 97 Diode continuous forward current I F T C = 9 C 6 A Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 35 T C = 5 C 89 Power dissipation, IGBT P D T C = 9 C 5 T C = 5 C 49 Power dissipation, diode P D T C = 9 C 94 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do exceed the maximum temperature of terminals Revision: 4-Feb-9 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 3.8 ma - - V GE = 5 V, I C = A -.93.55 Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, -.6 - V V GE = 5 V, I C = A, T J = 5 C -.35 - V CE = V GE, I C = 3.8 ma 4.5 5.8 7. Gate threshold voltage V GE(th) V CE = V GE, I C = 3.8 ma, - 4.6 - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = 3.8 ma (5 C to 5 C) - - - mv/ C V GE = V, V CE = V -. μa Collector to emitter leakage current I CES V GE = V, V CE = V, -.9 - ma V GE = V, V CE = V, T J = 5 C - 3.4 - Forward voltage drop, diode V FM V GE = V, I F = 8 A, - 3. - V V GE = V, I F = 8 A -.8 3.5 V GE = V, I F = 8 A, T J = 5 C - 3. - Gate to emitter leakage current I GES V GE = ± V - - ± na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g V GE = -5 V, V GE = +5 V - 8 - nc Input capacitance C ies - 65 - V CE = 5 V, V GE = Vf = MHz Reverse transfer capacitance C res - 345 - pf Turn-on switching loss E on -. - Turn-off switching loss E off I C = 75 A, - 3. - mj Total switching loss E tot V CC = 6 V, - 5. - Turn-on delay time t d(on) V = 5 V, GE R g =. - 3 - Rise time t r L = 5 μh, - 55 - Turn-off delay time t d(off) Energy losses - 44 - ns Fall time t f include tail and - 8 - diode recovery Turn-on switching loss E on Diode used -.9 - Turn-off switching loss E off I C = 75 A, HFA6PB - 5.3 - mj Total switching loss E tot V CC = 6 V, - 8. - Turn-on delay time t d(on) V = 5 V, GE R g =. - 47 - Rise time t r L = 5 μh, - 6 - Turn-off delay time t d(off) - 358 - ns Fall time t f - 3 - Turn-on switching loss E on - 3. - Turn-off switching loss E off - 4. - mj I C = A, Total switching loss E Energy losses tot V CC = 6 V, - 7. - include tail and V GE = 5 V, Turn-on delay time t d(on) diode recovery - 34 - R g =. Diode used Rise time t r L = 5 μh, HFA6PB - 66 - ns Turn-off delay time t d(off) - 4 - Fall time t f - 8 - Revision: 4-Feb-9 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on - 3.9 - Turn-off switching loss E off I C = A, Energy losses - 7. - mj Total switching loss E tot V CC = 6 V, include tail and -. - V GE = 5 V, Turn-on delay time t d(on) diode recovery - 54 - R g =. Rise time t L = 5 μh, Diode used r - 7 - HFA6PB ns Turn-off delay time t d(off) - 346 - Fall time t f - - Reverse bias safe operating area RBSOA T J = 5 C, I C = 5 A, R g =. V GE = 5 V to V, V CC = 8 V, V P = V, L = 5 μh Fullsquare Short circuit safe operating area SCSOA V GE = 5 V, V CC = 8 V, V CE max. = V, T VJ = 5 C - - μs Diode reverse recovery time t rr - 83 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V - - A Diode recovery charge Q rr - 93 - nc Diode reverse recovery time t rr - 78 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V, - 8. - A Diode recovery charge Q rr - 54 - nc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT - -.4 R thjc Diode - -.3 C/W Case to heatsink R thcs Flat, greased surface -. - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf. in) Torque to heatsink - -.3 (.5) Nm (lbf. in) Case style SOT-7 Revision: 4-Feb-9 3 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
I C (A) 75 5 5 75 T J = 5 C V CE (V) 3..8.4. V GE = 5V 5 A A 5 5.6 5 A.5..5..5 3. 3.5 4. V CE (V). 4 6 8 4 6 T J ( C) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature 8 9 V CE = V 6 8 4 V GE = 8 V V GE = 5 V 7 6 I C (A) 8 6 4 V GE = V I C (A) 5 4 3 V GE = 9 V.. 3. 4. 5. 5 7 9 3 V CE (V) V GE (V) Fig. - Typical IGBT Output Characteristics, Fig. 5 - Typical IGBT Transfer Characteristics 6 7. Allowable Case Temperature ( C) 4 8 6 4 DC 5 5 V GEth (V) 6.5 6. 5.5 5. 4.5 4. 3.5 3... 3. 4. 5. 6. 7. 8. I C - Continuous Collector Current (A) I C (ma) Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: 4-Feb-9 4 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
I CES (ma) T J = 5 C.... 3 4 5 6 7 8 9 Energy (mj) 8 7 6 Eoff 5 4 3 Eon 3 4 5 6 7 8 9 V CES (V) I C (A) Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current Fig. - Typical IGBT Energy Loss vs. I C, V CC = 6 V, R g =., V GE = 5 V, L = 5 μh t d(off) I F (A) 8 6 4 T J = 5 C Switching Time (ns) t f t d(on) t r.5..5..5 3. 3.5 4. V FM (V) Fig. 8 - Typical Diode Forward Characteristics 4 6 8 I C (A) Fig. - Typical IGBT Switching Time vs. I C, V CC = 6 V, R g =., V GE = 5 V, L = 5 μh 8 Allowable Case Temperature ( C) 6 4 8 6 4 DC 3 4 5 6 7 8 9 Energy (mj) 9 8 7 6 5 4 3 Eon Eoff 4 6 8 I F - Continuous Forward Current (A) R g (Ω) Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. - Typical IGBT Energy Loss vs. R g, V CC = 6 V, I C = A, V GE = 5 V, L = 5 μh Revision: 4-Feb-9 5 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Switching Time (ns) t d(off) t d(on) t f t r 4 6 8 I rr (A) 3 8 6 4 8 6 4 8 6 4 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Switching Time vs. R g, V CC = 6 V, I C = A, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A t rr (ns) 4 35 3 5 5 5 3 4 5 Q rr (nc) 3 3 8 6 4 8 6 4 8 6 3 4 5 di F /dt (A/μs) di F /dt (A/μs) Fig. 4 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A Fig. 6 - Typical Diode Reverse Recovery Charge vs. di F /dt V rr = 4 V, I F = 5 A I CE - Collector-Emitter Current (A) Limited by V CE(on) t p = 6 ms t p = ms t p = μs T A = 5 C T J = 5 C V GE = 5 V Single pulse.5 5 5 5 V CE - Collector-Emitter Voltage (V) Fig. 7 - IGBT Safe Operating Area Revision: 4-Feb-9 6 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Z thjc - Thermal Impedance Junction to Case ( C/W)...5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics - (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics - (Diode) 3 I C - Collector Curent (A) 5 5 5 V CE (V) Fig. - IGBT Reverse Bias SOA V GE = 5 V, T J = 5 C Revision: 4-Feb-9 7 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max.) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. - Clamped Inductive Load Test Circuit Fig. - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. 3 - Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 4 - Switching Loss Waveforms Test Circuit Revision: 4-Feb-9 8 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ORDERING INFORMATION TABLE Device code VS- G T D A UF 3 4 5 6 7 8 3 4 5 6 7 8 - product - Insulated Gate Bipolar Transistor (IGBT) - Trench IGBT technology - Current rating ( = A) - Circuit configuration (D = single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (UF = Trench ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch with AP diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS /doc?9543 /doc?9545 Revision: 4-Feb-9 9 Document Number: 9679 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Outline Dimensions SOT-7 Generation DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B- 7.45 (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full.7 (.8). (.83) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) 5.33 (.) 5.96 (.34).3 (.484).6 (.457) 4.7 (.97) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Feb-9 Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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