Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has all leads bent in a surface mounting style on PC Board. The bottom of the package serves simultaneously as DC ground, RF ground, and thermal path. For frequencies above 5 GHz, we recommend to mount the device directly on a metal heat sink, which is also RF ground, to avoid the inductance of PCB via holes. FEATURES High Frequency Operation up to 12 GHz Gain=14dB, P 1dB =29.8dBm, Eff = 5% @ 4GHz Surface Mountable Bottom ground for Effective Heat Removal APPLICATIONS Wireless Local Loop WiMAX Cellular Radio WLAN, Repeaters & HYPERLAN C-Band VSAT Radar DC PARAMETERS Parameters Conditions MIN TYP MAX Drain Current I dss (ma) V ds = 3V V gs = V 24 36 Pinch-off Voltage V p (V) V ds = 3V I ds = 2.5% Idss -1.6-1.2 -.8 Drain to Gate Breakdown Voltage BV gd (V) I dg = 1mA/mm 15 Thermal Resistance ( o C/W) 8 RF PERFORMANCE @ 4 GHz, (V ds = 8V, I ds =.5 I dss ) Parameters MIN TYP P * 1dB (dbm) 28.8 29.8 Eff @ P 1dB 4% 5% Small Signal Gain (db) 13 14 IP3 (dbm) 37 38.5 * Power typically remains similar as frequency changes. ABSOLUTE MAXIMUM RATING Parameters Symbol Rating Drain-Source Voltage (V) V ds Gate-Source Voltage (V) V gs -5 Drain Current (ma) I ds Continuous Dissipation At Room Temp. (W) P t 1.9 Operating Temp. ( o C) T A -55 to +85 Max. Channel Temp. ( o C) T ch +175
SMALL SIGNAL MEASUREMENTS S-Parameters for. Vds = 8V, Vgs = - 1V, Ids = ma Frequency (Ghz) S11 S11 S21 S21 S12 S12 S22 S22.1.95-13.1 18.782 168.9.4 8.6.527-7.3.2.943-26. 18.45 16.2.7 74.1.519-14.3.3.931-38.4 17.836 151.8. 67.3.58-21..4.918-5.2 17.129 143.9.13 6.7.495-27.3.5.94-61.2 16.338 136.4.16 54.6.481-33.2.6.889-71.3 15.59 129.5.18 49..467-38.6.7.875-8.7 14.68 123.. 43.9.453-43.6.8.862-89.4 13.875 117..21 39.2.441-48.2.9.85-97.3 13.9 111.4.22 34.8.4-52.5 1..839-4.6 12.391 6.1.24.9.4-56.4 1.5.798-133.6 9.544 84..27 15.4.391-73. 2..772-154.6 7.68 66..29 4.2.386-86.4 2.5.75-171.4 6.433 5.2. -4.4.393-98. 3..7 173.9 5.567 35.5.31-11.5.46-8.6 3.5.77 16. 4.946 21.4.32-17.6.4-118.3 4..682 146.2 4.491 7.5.34-23.1.435-127.4 4.5.652 131.8 4.15-6.5.36-28.5.447-136. 5..619 116.2 3.889 -.8.39-34..457-144.3 5.5.584 98.7 3.682-35.5.42-4.1.464-152.4 6..551 78.7 3.57-5.8.47-47.1.466-16.4 6.5.526 56. 3.344-66.7.52-55.3.463-168.5 7..517 31. 3.178-83.3.58-64.7.452-176.9 7.5.533 5.1 2.999 -.5.64-75.3.431 174.4 8..571-19.7 2.8-118..69-87..396 165.3 8.5.627-42. 2.585-135.7.75-99.5.344 156.1 9..69-61.6 2.357-153.6.79-112.7.273 147.3 9.5.754-78.6 2.123-171.5.82-126.5.183 14.8..813-93.5 1.885 17.7.84-14.7.81 15.1.5.864-6.6 1.649 153..84-155.2.8-116.7 11..97-118.4 1.416 135.5.82-169.8.7-6.1 11.5.939-129. 1.194 118.7.79 175.9.342-113.7 12..961-138.6.99 2.7.73 162.2.468-124. 12.5.976-147.2.8 87.9.67 149.4.578-134.7 13..985-155..657 74.4.61 137.7.668-144.9 13.5.99-162.2.532 62.2.55 127.1.739-154.4 14..992-168.7.431 51.2.5 117.4.795-163. 14.5.993-174.7.351 41.2.45 8.7.837-171. 15..994 179.6.287 32.2.4.8.87-178.2 15.5.994 174.2.237 24..36 93.5.894 175.2 16..994 169.1.198 16.5.33 86.8.914 169.
4 Maximum Available Gain @ Vds = 8V, Ids = ma 35 25 MAG (db) 15 5 5 15 Frequency (GHz) POWER MEASUREMENTS 35 Frequency = 4GHz, Bias = 8V, - 1V, ma 7 25 Pout(dBm) GAIN(dB) EFF 6 5 Pout(dBm), gain(db) 15 4 Efficiency % 5 - -5 5 15 25 Input power (dbm)
7. IMD & IP3 8V, -1V, ma IP3 dbm, IMD3 dbc 6. 5. 4... IP3 dbm C/I3 dbc.. 5 15 25 35 Output power dbm Optimal Source and Load Impedance Freq GHz Γs Real Γs Imag ΓL Real ΓL Imag 4 GHz 5.8 Ohm - j7.1 Ohm 47.1 Ohm J.7 Ohm
PACKAGE OUTLINE MOUNTING INSTRUCTIONS The device may dissipate several watts of power. It is important to provide a good heat sink to dissipate the heat. There are two options of mounting the amplifier, as shown. The most effective way is to mount the amplifier to a heat sink pedestal (Option 1). We strongly recommend this way for high power device. The other option, which is mounted directly on PCB, is to add sufficient number of plated through via holes to the PCB. The base of the device is soldered to the PCB (Option 2). The via hole wall should be plated by at least 1 oz thick (1.5 mil) of high thermal conductivity copper to conduct the heat from the top of PCB to the bottom of PCB. Also fill the via holes with solder to help conducting the heat.