CoolMOS 1) Power MOSFET ISOPLUS - elecrically isolaed surface o heasink Surface Moun Power Device S = V 25 = R DS(on) max = 45 mw Preliminary daa G KS D T D K Isolaed surface o heasink D K 3x S G KS nc S E72873 MOSFET T S = 25 C o 1 C V ±2 V 25 T C = 25 C T C = C E S E R single pulse repeiive = 11 ; T C = 25 C 38 19 3 dv/d MOSFET dv/d ruggedness =...4 V V/ ( = 25 C, unless oherwise specified) R DSon = 44 ; = 1 V 45 mω (h) = 3 m; = 2.5 3 3.5 V SS = S ; = V; = 25 C 1 µ µ I GSS = V ; = ± 2 V 1 n d(on) r d(off) f C iss C oss Q g Q gs Q gd Inducive swiching boos mode wih diode D = 3 V; = 3 = 1 V; = 33 Ω = V; = 1 V; f = 1 MHz = V; = 44 = 1 V; = 3.3 Ω 7 1.3.45.35 32 1 35 R hjc R hjh wih heasink compound (IXYS es seup) bd pf pf 19 nc nc nc.4 bd K/W K/W Feaures Fas CoolMOS 1) power MOSFET 4 h generaion - high blocking capabiliy - lowes resisance - avalanche raed for unclamped inducive swiching (UIS) - low hermal resisance due o reduced chip hickness Package - isolaed surface o heasink - low coupling capaciy beween pi and heasink - PCB space saving - enlarged creepage owards heasink - applicaion friendly pinou - low inducive curren pah - high reliabiliy pplicaio Buck / boos chopper Opimized for boos configuraion PFC sage 1) CoolMOS is a rademark of Infineon Technologies G. 211 IXYS ll righs reserved 1-6
Source-Drain Diode of MOSFET T I S25 I S T C = 25 C T C = C ( = 25 C, unless oherwise specified) V SD I F = 44 ; = V.9 1. V rr Q RM I RM I F = 44 ; -di F /d = 1 /µs; V R = V 17 38 µc Equivalen Circuis for Simulaion Conducion I V R Boos Diode (yp. a T J ) V = bd V; R = bd mw Diode D I F25 I F Componen T sg -55...+1-55...+125 V ISOL I ISOL < 1 m; / Hz 2 V~ F C mouning force... 13 N C P coupling capaciy beween shored pi and backside meal 9 pf d S, d d S, d T C = 25 C; DC T C = C; DC ( = 25 C, unless oherwise specified) V RRM = 25 C V V F I F = 25 = 25 C I R V R = V RRM = 25 C I RM I F = 3 ; V R = 3 V = 1 C -di/d = 2 /µs rr I F = 1 ; V R = 3 V = 1 C -di/d = 1 /µs R hjc R hjh per diode wih heasink compound (IXYS es seup) pin - pin pin - backside meal 1.65 4 C C mm mm CTI Weigh 8 g 96 61 1.3 1.4 V 1 µ bd m 1 35 bd.7 K/W k/w Ordering Par Number Marking on Produc Delivering Mode 211 IXYS ll righs reserved 2-6 Base Qy Ordering Code Sandard MKE38RKDFELB-TRR MKE38RKDFELB Tape & Reel 51479 MKE38RKDFELB MKE38RKDFELB Bliser 45 51231
(6x) 1,5 2) 5,5,1,3,1 2,1 1) 25,2 (8 : 1),5,1 18,1 seaing plane 9,1 (3x) 2,5 2) 4,5,55,1 23,2 32,7,5 2,2 4,85,2 2,75,1 5,5,1 13,5,1 16,25,1 19,1 ~ ~ ~ 3),5 Noes: 1) porusion may add.2 mm max. on each side 2) addiional max..5 mm per side by punching misalignemen or overlap of dam bar or bending compression 3) DCB area 1 o µm convex; posiion of DCB area in relaion o plasic rim: ±25 µm (measured 2 mm from Cu rim) 4) erminal plaing:.2-1 µm Ni + 1-25 µm Sn (galv.) cuing edges may be parially free of plaing Backside DCB UL Logo Par number Dae code Daa Marix Code Pin 1 idenifier XXXXXXXXXX yyww The Daa Marix Code conai he following informaion in 36 digis: Digis 1 hrough 2: par number 21 o 25: dae code (YYWW) 26 o 31: assembly lo code 32: reserved for special informaion 33 o 36: may be used for subsequen module numbering wihin he assembly lo 211 IXYS ll righs reserved 3-6
1.1 SS =.25 m 32 2 2 S 1. [] 1.9.8 - - -2 2 1 1 1 T J [ C] 1 2 3 4 5 6 7 8 9 1 Fig.1 Drain source breakdown volage versus emperaure Fig. 2 Typ. rafer characerisics [] = 2/1/8/7 V 1 T J = 25 C 6 V 5.5 V 5 V 4.5 V 4 8 12 16 2 Fig. 3 Typical oupu characerisics [] 1 1 2 T J = 1 C = 2/1/8/7 V 6 V 5 V 4.5V 4 8 12 16 2 Fig. 4 Typical oupu characerisics 1 = 1 V = 44 2.5 2. = 4.5 V 5 V 5.5 V R DSon [mω] 2 98% yp. R DSon normalized 1.5 1..5 6 V 7 V 8 V 1 V 2 V - - -2 2 1 1 1 [ C] Fig.5 Drain source on-sae resisance R DS(on) vs. juncion emperaure. 25 75 1 125 [] Fig. 6 Drain source on-sae resisance, R DS(on) versus 211 IXYS ll righs reserved 4-6
1 8 6 4 2 = 44 pulsed = V 1 1 Q G [nc] Fig. 7 Typ. urn-on gae charge V C [pf] 1 9 7 3 2 1 2 1 1 1 Fig. 8 Typ. capaciies, MOSFET only [] 3. 2.5 2. 1.5 1. = 33 Ω = 3 V = 1 V d(on) r 1 [] [] 1.5.9.6 = 33 Ω = 3 V = 1 V d (off) 1 9 7 3 [].5 2. 1 2 3 7 [].3 1 f. 1 2 3 7 [] Fig. 9 Typ. urn-on energy and swiching imes vs. collecor curren, indukive swiching Fig. 1 Typ. urn-off energy and swiching imes vs. collecor-curren, indukive swiching, [] 2. = 3 = 3 V V 1.6 GS = 1 V.8.4 d(on). 3 35 45 55 65 7 [Ω] 1 [] r Fig. 11 Typ. urn-on energy and swiching imes vs. gae resisor, indukive swiching 1.6.8 [].4 = 3 = 3 V = 1 V d(off) f. 3 7 [Ω] 1 1 Fig. 12 Typ. urn-off energy and swiching imes vs. gae resisor, indukive swiching [] 211 IXYS ll righs reserved 5-6
I F [] 9 7 3 2 1 25 C [] 1 9 7 3 2 1 = 68 Ω 68 Ω 56 Ω 56 Ω 47 Ω 47Ω I F = 3 V R = 3 V rr 33 Ω 1 1 1 1 2 rr []..2.4.6.8 1. 1.4 1.6 V F 1 1 di F /d [/µs] Fig. 13 Typ. forward characerisics of diode D Fig. 14 Typ. reverse recovery characerisics of diode D = 33 Ω V R = 3 V 8 6 Q rr 4 Q rr [] [µc] 2 2 1 2 3 7 I F [] Fig. 15 Typ. reverse recovery characerisics of diode D 211 IXYS ll righs reserved 6-6
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