INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard package UL approved file E78996 Compliant to RoHS directive 22/95/EC Designed and qualified for industrial level PRODUCT SUMMARY V CES I C DC V CE(on) at 2 A, 25 C 6 V 265 A 1.74 V BENEFITS Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, welding Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C 265 Continuous collector current I C T C = 67 C 2 Pulsed collector current I CM 4 A Peak switching current I LM 4 Peak diode forward current I FM 4 Gate to emitter voltage ± 2 RMS isolation voltage V ISOL Any terminal to case, t = 1 min 25 V T C = 25 C 625 Maximum power dissipation P D T C = 85 C 325 W ELECTRICAL SPECIFICATIONS ( = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) = V, I C = 1 ma 6 - - = 15 V, I C = 2 A - 1.74 2.2 Collector to emitter voltage V CE(on) = 15 V, I C = 2 A, = 125 C - 1.79 2.25 V Gate threshold voltage (th) I C =.25 ma 3 4.4 6 Temperature coeff. of threshold voltage Δ(th) /Δ V CE =, I C =.25 ma - - 11 - mv/ C Forward transconductance g fe V CE = 2 V, I C = 2 A - 22 - S = V, V CE = 6 V -.14 1 Collector to emitter leakage current I CES = V, V CE = 6 V, = 125 C - - 1 ma I C = 2 A, = V - 4.2 6. Diode forward voltage drop V FM I C = 2 A, = V, = 125 C - 4.4 6.2 V Gate to emitter leakage current I GES = ± 2 V - - ± 25 na Document Number: 94545 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 4-May-1 1
Vishay High Power Products"Half-Bridge" IGBT INT-A-PAK SWITCHING CHARACTERISTICS ( = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q g IC = 2 A - 9 - Gate to emitter charge Q ge I C = 27 A - 125 - nc Gate to collector charge Q gc = 15 V - 36 - Turn-on delay time t d(on) - 22 - Rise time t r IC = 2 A - 154 - Turn-off delay time t d(off) V CC = 36 V - 3 - ns Fall time t f = ± 15 V = 25 C - 18 - Turn-on switching energy E on R g1 = 15 Ω - 2.2 - Turn-off switching energy E off R g2 = Ω - 6.6 - mj Total switching energy E ts - 8.8 - Turn-on delay time t d(on) - 342 - Rise time t r IC = 2 A - 194 - Turn-off delay time t d(off) V CC = 36 V - 366 - ns Fall time t f = ± 15 V = 125 C - 213 - Turn-on switching energy E on R g1 = 15 Ω - 5 - Turn-off switching energy E off R g2 = Ω - 16 - mj Total switching energy E ts - 21 - Input capacitance C ies VGE = V - 2 68 - Output capacitance C oes V CC = 3 V - 1254 - pf Reverse transfer capacitance C res f = 1. MHz - 261 - Diode reverse recovery time t rr - 179 - ns Diode peak reverse current I I C = 2 A rr - 12 - A V CC = 36 V Diode recovery charge Q rr di/dt = 13 A/μs - 1 714 - μc Diode peak rate of fall of recovery during t b di (rec)m /dt - 1922 - A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction temperature range - 4-15 C Storage temperature range T Stg - 4-125 IGBT - -.2 Junction to case R thjc Diode - -.4 C/W Case to sink per module R thcs -.1 - case to heatsink - - 4 Mounting torque Nm case to terminal 1, 2, 3 - - 3 Weight - 2 - g www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94545 2 Revision: 4-May-1
"Half-Bridge" IGBT INT-A-PAKVishay High Power Products 14 Load Current (A) 12 8 6 4 Square wave: 6 % of rated voltage I For both: Duty cycle: 5 % = 125 C T sink = 9 C Gate drive as specified Power Dissipation = 12 W 2 Ideal diodes.1 1 1 f - Frequency (khz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) IC - Collector-to-Emitter Current (A) = 15V 5 µs pulse width = 125 C = 25 C TC - Case Temperature ( C) 16 14 12 8 6 4 2 1.5 1. 1.5 2. 2.5 V CE - Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics 5 15 2 25 3 Maximum DC Collector Current (A) Fig. 4 - Case Temperature vs. Maximum Collector Current IC - Collector-to-Emitter Current (A) 1 = 2 V 5 µs pulse width = 125 C = 25 C VCE - Collector-to-Emitter Voltage (V) 3 2.5 2 1.5 4 A 2 A A 1 4. 5. 6. 7. 8. 9. - Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 1 2 4 6 8 12 14 16 - Junction Temperature ( C) Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Document Number: 94545 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 4-May-1 3
Vishay High Power Products"Half-Bridge" IGBT INT-A-PAK 1 Thermal Response (ZthJC ).1.1 D =.5.2.1.5.2.1 Single pulse (thermal response).1 1E-5.1.1.1.1 1 1 t 1 - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case VCE - Gate-to-Emitter Voltage (V) 2 V CC = 4 V I C = 135 A 16 12 8 4 Total Switching Losses (mj) 7 6 5 4 3 2 1 V CC = 36 V = 125 C = 15 V Rg1 = 15 Ω Rg2 = Ω 2 4 6 8 5 15 2 25 3 35 4 Q G - Total gate Charge (nc) I C - Collector-to-Emitter Current (A) Fig. 7 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Collector to Emitter Current Total Switching Losses (mj) 4 35 3 25 V cc = 36 V = 125 C = 15 V I c = 2 A IC - Collector-to-Emitter Current (A) 5 4 3 2 = 2 V Safe operating area 2 1 2 3 4 5 2 3 4 5 6 7 R G - Gate Resistance (Ω) Fig. 8 - Typical Switching Losses vs. Gate Resistance V CE - Collector-to-Emitter Voltage (V) Fig. 1 - Reverse Bias SOA www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94545 4 Revision: 4-May-1
"Half-Bridge" IGBT INT-A-PAKVishay High Power Products 2 I F - Instantaneous Forward Current (A) = 25 C = 125 C trr (ns) 15 5 4 A, 125 C 2 A, 125 C A, 125 C 4 A, 25 C 2 A, 25 C A, 2 5 C 1 1. 2. 3. 4. 5. 6. V FM - Forward Voltage Drop (V) Fig. 11 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 5 15 2 di F/ dt (A/µs) Fig. 13 - Typical Reverse Recovery Time vs. di F /dt 2 25 QRR (nc) 15 4 A, 125 C 2 A, 125 C A, 125 C 4 A, 25 C I RRM (A) 2 15 4 A, 125 C 2 A, 125 C A, 125 C 5 2 A, 25 C A, 25 C 5 4 A, 25 C 2 A, 25 C A, 25 C 5 15 2 di F/ dt (A/µs) Fig. 12 - Typical Stored Charge vs. di F /dt 5 15 2 di F/ dt (A/µs) Fig. 14 - Typical Reverse Recovery vs. di F /dt Document Number: 94545 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 4-May-1 5
Vishay High Power Products"Half-Bridge" IGBT INT-A-PAK GATE VOLTAGE D.U.T. 1% +Vg +Vg Vce DUT VOLTAGE AND CURRENT 1% Ic Vcc 9% Ic Ipk Ic td(on) tr 5% Vce Vce Ic dt Vce ie dt t2 Eon = t1 t1 t2 Fig. 15a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f Fig. 15c - Test Waveforms for Circuit of Fig. 18a, Defining E on, t d(on), t r +Vge 9% Vge Ic trr Ic dt trr Qrr id dt = tx Ic 1% Vce Vce Ic 9% Ic 5% Ic Vpk tx 1% Vcc Irr 1% Irr Vcc td(off) tf DIODE RECOVERY WAVEFORMS t1+5µs Eoff = Vce ic dt t1 Vce Ic dt DIODE REVERSE RECOVERY ENERGY t3 Vd Ic dt t4 Erec Vd id dt = t3 t4 t1 t2 Fig. 15b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f Fig. 15d - Test Waveforms for Circuit of Fig. 18a, Defining E rec, t rr, Q rr, I rr Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t t1 t2 Fig. 15e - Macro Waveforms for Figure 18a's Test Circuit www.vishay.com For technical questions, contact: indmodules@vishay.com Document Number: 94545 6 Revision: 4-May-1
"Half-Bridge" IGBT INT-A-PAKVishay High Power Products V L V * c D.U.T. - 48V R L = 48V 4 X IC @25 C 5V 6µF V Fig. 16 - Clamped Inductive Load Test Circuit Fig. 17 - Pulsed Collector Current Test Circuit ORDERING INFORMATION TABLE Device code GA 2 T S 6 U PbF 1 2 3 4 5 6 7 1 - Essential part number IGBT modules 2 - Current rating (2 = 2 A) 3 - Circuit configuration (T = Half bridge) 4 - INT-A-PAK 5 - Voltage code (6 = 6 V) 6 - Speed/type (U = Ultrafast IGBT) 7 - PbF = Lead (Pb)-free CIRCUIT CONFIGURATION 1 S1 S2 3 2 6 7 4 5 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95173 Document Number: 94545 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 4-May-1 7
www.vishay.com DIMENSIONS in millimeters (inches) INT-A-PAK IGBT Outline Dimensions Vishay Semiconductors 14.3 17 (.67) 23 (.91) 23 (.91) (.56) 5 (.2) 35 (1.38) 14.5 (.57) 1 2 3 5 4 7 6 3 (1.18) 9 (.33) 28 (1.1) 29 (1.15) 7 (.28) Ø 6.5 (Ø.25) 2.8 x.8 (.11 x.3) 8 (3.15) 3 screws M6 x 1 66 (2.6) 94 (3.7) 37 (1.44) Revision: 27-Mar-13 1 Document Number: 95173 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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