CGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms

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Transcription:

Rev 1.1 March 2019 CGHV60040D 40 W, 6.0 GHz, GaN HEMT Die Cree s CGHV60040D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and PN: CGHV60040D wider bandwidths compared to Si and GaAs transistors. FEATURES APPLICATIONS 18 db Typical Small Signal Gain at 4 GHz 17 db Typical Small Signal Gain at 6 GHz 65% Typical Power Added Efficiency Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms 40 W Typical P SAT 50 V Operation High Breakdown Voltage Up to 6 GHz Operation Packaging Information Bare die are shipped on tape or in Gel-Pak containers. Non-adhesive tacky membrane immobilizes die during shipment. Subject to change without notice. 1

Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage V DSS 150 V DC 25 C Gate-source Voltage V GS -10, +2 V DC 25 C Storage Temperature T STG -65, +150 C Operating Junction Temperature T J 225 C Maximum Drain Current 1 I MAX 3.2 A 25 C Maximum Forward Gate Current I GMAX 5.2 ma 25 C Thermal Resistance, Junction to Case (packaged) 2 R θjc 5.10 C/W 85 C, 20.8W Dissipation Thermal Resistance, Junction to Case (die only) R θjc 3.27 C/W 85 C, 20.8W Dissipation Mounting Temperature T S 320 C 30 seconds Note 1 Current limit for long term reliable operation. Note 2 Eutectic die attach using 80/20 AuSn mounted to a 10 mil thick Cu15Mo85 carrier. Electrical Characteristics (Frequency = 6 GHz unless otherwise stated; T C = 25 C) Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Pinch-Off Voltage V P -3.8-3.0 2.3 V V DS = 10 V, I D = 5.2 ma Drain Current 1 I DSS 4.2 5.2 A V DS = 6 V, V GS = 2.0 V Drain-Source Breakdown Voltage V BD 150 V V GS = -8 V, I D = 5.2 ma On Resistance R ON 0.56 Ω V DS = 0.1 V Gate Forward Voltage V G-ON 1.9 V I GS = 5.2 ma RF Characteristics Small Signal Gain G SS 17 db V DD = 65 ma Saturated Power Output 2,3 P SAT 40 W V DD = 65 ma Drain Efficiency 4 η 65 % V DD = 65 ma, P SAT = 40 W Intermodulation Distortion IM3-30 dbc Output Mismatch Stress VSWR 10 : 1 Y V DD = 65 ma, P OUT = 40 W PEP No damage at all phase angles, V DD = 65 ma P OUT = 40 W CW Dynamic Characteristics Input Capacitance C GS 7.1 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Output Capacitance C DS 1.6 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Feedback Capacitance C GD 0.15 pf V DS = 50 V, V gs = -8 V, f = 1 MHz Notes: 1 Scaled from PCM data 2 P SAT is defined as I G = 0.52 ma. 3 Pulsed 100 μsec, 10% 4 Drain Efficiency = P OUT / P DC 2 CGHV60040D Rev 1.1

DIE Dimensions (units in microns) Overall die size 820 x 1800 (+0/-50) microns, die thickness 100 microns. All Gate and Drain pads must be wire bonded for electrical connection. Pad Size (microns) Drain 464 x 156 Gate 464 x 156 Interconnect 156 x 152 Assembly Notes: Recommended solder is AuSn (80/20) solder. Refer to Cree s website for the Eutectic Die Bond Procedure application note at www.cree.com/rf/document-library Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. Use the die label (XX-YY) for correct orientation, see arrow 9 in the drawing above. 3 CGHV60040D Rev 1.1

Typical Performance Figure 1. - CGHV60040D Output Power, Gain and Efficiency vs. Input Power at Tcase = 25 C V DD = 65 ma, Frequency = 2.7 GHz Figure 2. - CGHV60040D G MAX and K Factor vs. Frequency at Tcase = 25 C V DD = 65 ma 4 CGHV60040D Rev 1.1

Typical Die S-Parameters (Small Signal, V DS = 65 ma, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 0.500 0.935-124.81 17.697 105.17 0.018 16.26 0.468-61.04 0.600 0.932-132.78 15.111 99.07 0.019 10.39 0.461-66.42 0.700 0.930-138.77 13.108 93.98 0.019 5.52 0.462-71.19 0.800 0.929-143.42 11.520 89.59 0.019 1.35 0.468-75.54 0.900 0.929-147.12 10.235 85.69 0.019-2.32 0.478-79.56 1.000 0.929-150.12 9.175 82.18 0.019-5.62 0.491-83.30 1.100 0.930-152.61 8.287 78.96 0.018-8.62 0.506-86.79 1.200 0.931-154.70 7.532 75.98 0.018-11.38 0.521-90.07 1.300 0.932-156.49 6.884 73.19 0.018-13.94 0.537-93.16 1.400 0.933-158.04 6.320 70.57 0.018-16.34 0.553-96.07 1.500 0.934-159.39 5.827 68.10 0.018-18.59 0.570-98.82 1.600 0.936-160.58 5.391 65.75 0.017-20.72 0.586-101.42 1.700 0.937-161.64 5.003 63.51 0.017-22.73 0.602-103.88 1.800 0.939-162.59 4.657 61.38 0.017-24.64 0.617-106.22 1.900 0.940-163.45 4.346 59.35 0.016-26.45 0.633-108.45 2.000 0.941-164.24 4.065 57.40 0.016-28.18 0.647-110.56 2.100 0.943-164.95 3.810 55.53 0.016-29.82 0.661-112.57 2.200 0.944-165.61 3.579 53.73 0.016-31.39 0.675-114.49 2.300 0.946-166.22 3.367 52.01 0.015-32.89 0.688-116.32 2.400 0.947-166.79 3.174 50.35 0.015-34.32 0.701-118.07 2.500 0.948-167.32 2.996 48.75 0.015-35.70 0.713-119.74 2.600 0.950-167.82 2.833 47.21 0.014-37.01 0.724-121.34 2.700 0.951-168.29 2.682 45.73 0.014-38.26 0.735-122.87 2.800 0.952-168.73 2.542 44.29 0.014-39.47 0.745-124.33 2.900 0.953-169.14 2.413 42.91 0.014-40.62 0.755-125.74 3.000 0.954-169.54 2.294 41.57 0.013-41.73 0.765-127.08 3.200 0.957-170.27 2.079 39.03 0.013-43.81 0.782-129.62 3.400 0.959-170.94 1.892 36.65 0.012-45.72 0.798-131.95 3.600 0.960-171.55 1.729 34.42 0.012-47.49 0.812-134.12 3.800 0.962-172.11 1.585 32.31 0.011-49.12 0.825-136.13 4.000 0.964-172.64 1.458 30.33 0.011-50.63 0.837-137.99 4.200 0.965-173.13 1.346 28.45 0.010-52.03 0.848-139.73 4.400 0.966-173.59 1.246 26.67 0.010-53.32 0.857-141.35 4.600 0.967-174.02 1.156 24.99 0.009-54.51 0.866-142.87 4.800 0.969-174.43 1.076 23.38 0.009-55.62 0.874-144.29 5.000 0.970-174.82 1.004 21.85 0.009-56.64 0.882-145.63 5.200 0.970-175.19 0.939 20.39 0.008-57.59 0.888-146.88 5.400 0.971-175.54 0.880 19.00 0.008-58.46 0.894-148.07 5.600 0.972-175.88 0.826 17.66 0.008-59.27 0.900-149.18 5.800 0.973-176.20 0.777 16.37 0.007-60.01 0.905-150.24 6.000 0.973-176.51 0.732 15.14 0.007-60.69 0.910-151.24 To download the s-parameters in s2p format, go to the CGHV60040D Product Page and click the documentation tab. 5 CGHV60040D Rev 1.1

Part Number System CGHV60040D Die Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Value Units Upper Frequency 1 6.0 GHz Power Output 40 W Package Bare Die - Table 1. Note 1 : Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. 6 CGHV60040D Rev 1.1

Product Ordering Information Order Number Description Unit of Measure CGHV60040D GaN HEMT Each CGHV60040D-TB Test board without GaN HEMT Each CGHV60040D-AMP1 Test board with GaN HEMT installed Each 7 CGHV60040D Rev 1.1

Disclaimer Specifications are subject to change without notice. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Typical parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of For more information, please contact: Durham, NC 27703 Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 8 CGHV60040D Rev 1.1