Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching and conduction losses Insulated package Insulating voltage = 25 V rms Capacitance = 45 pf Complies with UL standards (File ref: E81734) Description The, which uses ST Turbo 2, 6 V technology, is especially suited to be used for DC/AC and DC/AC converters in primary stage of MIG/MMA/TIG welding machine. Packaged in ISOTOP, this device offers high power integration for all welding machines and industrial equipment. Table 1. Symbol Device summary Value I F(AV) 2 x 1 A V RRM 6 V T j (max) 15 C V F (typ) t rr (typ) A2 A1 A2 K2 K1 K2 A1 K1 ISOTOP 1. V 55 ns October 212 Doc ID 23612 Rev 1 1/9 This is information on a product in full production. www.st.com 9
Characteristics 1 Characteristics Table 2. Absolute ratings (limiting values at T j = 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) Forward rms current Per diode 145 A I F(peak) Average forward current, =.2 Per diode T c = 15 C 2 A I FSM Surge non repetitive forward current t p = 1 ms Sinusoidal 8 A T stg Storage temperature range -65 to + 15 C T j Maximum operating junction temperature 15 C Table 3. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case Per diode.7 Total.4 R th(c) Coupling.1 C/W When the two diodes 1 and 2 are used simultaneously: T j (diode 1) = P (diode 1) X R th(j-c) (per diode) + P (diode 2) x R th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C - 3 V R = V RRM T j = 125 C - 3 3 µa V F (2) Forward voltage drop T j = 25 C 1.5 I F = 1 A T j = 15 C - 1 1.3 T j = 25 C - 1.75 I F = 2 A T j = 15 C - 1.25 1.6 V 1. Pulse test: t p = 5 ms, < 2% 2. Pulse test: t p = 38 µs, < 2% To evaluate the conduction losses use the following equation: 2 P = 1. x I F(AV) +.3 x I F (RMS) 2/9 Doc ID 23612 Rev 1
Characteristics Table 5. Dynamic characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I RM Reverse recovery current - 3 4 A Q RR Reverse recovery charge T j = 125 C I F = 1 A, V R = 4 V di F /dt = -2 A/µs 46 nc S factor Softness factor.4 t rr Reverse recovery time T j = 25 C I F = 1 A, V R = 3 V di F /dt = -1 A/µs - 55 75 ns t fr Forward recovery time T j = 25 C I F = 1 A, V FR = 2.5 V - 2 ns V FP Forward recovery voltage T j = 25 C di F /dt = 1 A/µs - 3.3 5 V Figure 1. 18 16 14 12 1 8 6 4 P F(AV) (W) Average forward power dissipation versus average forward current (per diode) δ=.5 δ=.1 δ=.2 δ=.5 δ=1 2 I δ=tp/t tp F(AV) (A) 2 4 6 8 1 12 14 T Figure 2. 1. 1. 1. 1. I FM (A) Forward voltage drop versus forward current (per diode) T j=15 C (Typical values) T j=15 C (Maximum values) T j=25 C (Maximum values) VFM(V).1..4.8 1.2 1.6 2. Figure 3. Relative variation of thermal impedance, junction to case, versus pulse duration Figure 4. Peak reverse recovery current versus di F /dt (typical values, per diode) Z th(j-c) /R th(j-c) 1..9.8.7.6.5.4.3.2 Single pulse.1 tp(s). 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 7 6 5 4 3 2 I RM (A) I F = I F(AV) V R= 4 V Tj = 125 C 1 5 1 15 2 25 3 35 4 45 5 Doc ID 23612 Rev 1 3/9
Characteristics Figure 5. Reverse recovery time versus di F /dt (typical values, per diode) Figure 6. Reverse recovery charges versus di F /dt (typical values, per diode) 35 3 25 t RR (ns) I F = I F(AV) V R= 4 V Tj = 125 C 9 8 7 6 QRR(nC) I F=I F(AV) V R=4 V T j=125 C 2 5 15 4 1 5 5 1 15 2 25 3 35 4 45 5 3 2 1 5 1 15 2 25 3 35 4 45 5 Figure 7. Reverse recovery softness factor versus di F /dt (typical values, per diode) Figure 8. Relative variation of dynamic parameters versus junction temperature.7.6.5 S FACTOR I F=I F(AV) V R=4 V T j=125 C 2. 1.5 S FACTOR I F=I F(AV) V R=4 V Reference: T j=125 C.4 1..3.2.5 I RM.1. 5 1 15 2 25 3 35 4 45 5 Q RR Tj( C). 25 5 75 1 125 Figure 9. Transient peak forward voltage versus di F /dt (typical values, per diode) Figure 1. Forward recovery time versus di F /dt (typical values, per diode) 12 1 V FP (V) I F=I F(AV) T j=125 C 12 1 t FR (ns) I F = I F(AV) V FR = 2.5 V Tj = 125 C 8 8 6 6 4 4 2 1 15 2 25 3 35 4 45 5 2 1 15 2 25 3 35 4 45 5 4/9 Doc ID 23612 Rev 1
Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) 1 C(pF) F=1 MHz V OSC =3 mv RMS T j =25 C 1 VR(V) 1 1 1 1 1 Doc ID 23612 Rev 1 5/9
Ordering information scheme 2 Ordering information scheme Figure 12. Ordering information scheme STTH 2 W 6 TVx Ultrafast switching diode Average forward current 2 = 2 A Welding Repetitive peak reverse voltage 6 = 6 V Package TVx = ISOTOP 6/9 Doc ID 23612 Rev 1
Package information 3 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value: 1.3 N m (1.5 N m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 6. ISOTOP dimensions Dimensions Ref. Millimeters Inches E G2 C Min. Max. Min. Max. A 11.8 12.2.465.48 A A1 E2 C2 A1 8.9 9.1.35.358 B 7.8 8.2.37.323 C.75.85.3.33 F1 F C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 P1 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 D S G D1 E2 24.8 typ..976 typ. B G 14.9 15.1.587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 G1 E1 ØP F 4.1 4.3.161.169 F1 4.6 5..181.197 P 4. 4.3.157.69 P1 4. 4.4.157.173 S 3.1 3.3 1.185 1.193 Doc ID 23612 Rev 1 7/9
Ordering information 4 Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty (1) Delivery mode ISOTOP 27 g 1 with screws Tube 1. This product is supplied with 4 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order. 5 Revision history Table 8. Document revision history Date Revision Changes 5-Oct-212 1 First issue 8/9 Doc ID 23612 Rev 1
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