MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices are needed. Features Blocking oltage to 800 olts On State Current Rating of 8.0 Amperes RMS at 0 C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt 250 /µs minimum at 25 C Minimizes Snubber Networks for Protection Industry Standard TO 220 Package Pin Out High Commutating di/dt 6.5 A/ms minimum at 25 C These Devices are Pb Free and are RoHS Compliant Functional Diagram 2 CASE 22A STYLE MT2 Additional Information G MT Datasheet Resources Samples
Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off-State oltage (Note ) (Gate Open, Sine Wave 50 to 60 Hz, T J = 25 to 0 C) MAC8DG MAC8MG DRM, RRM 00 600 MAC8NG 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T C = 0 C) I T (RMS) 8.0 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T J = 25 C) I TSM 80 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 26 A²sec Peak Gate Power (Pulse Width.0 µs, T C = 80 C) P GM 6 W Average Gate Power (t = 8.3 ms, T C = 80 C) P G (A) 0.35 W Operating Junction Temperature Range T J -0 to +25 C Storage Temperature Range T stg -0 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol alue Unit Thermal Resistance, Junction to Case (AC) Junction to Ambient R 8JC R 8JA.8 62.5 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds T L 260 C
Electrical Characteristics - OFF (T J = 25 C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current ( D = DRM = RRM ; Gate Open) T J = 25 C I DRM, - - 0.0 I RRM T J = 25 C - - 2.0 ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State oltage (Note ) (I TM = ±6.0 A) TM.3.6 Gate Trigger Current (Continuous dc) ( D = 2, R L = 0 Ω) 5.0 3 5.0 MT2(+), G( ) 5.0 6 5.0 I GT MT2( ), G( ) 5.0 8 5.0 ma Holding Current ( D = 2, Gate Open, Initiating Current = ±50 ma)) I H.5.5 ma Gate Non Trigger oltage (Continuous dc) ( D = 2, R L = 0 Ω, T J = C) GD 20 0 _ 20 50 Latching Current ( D = 2, I G = 35 ma) I L MT2(+), G( ) _ 30 80 MT2( ), G( ) _ 20 50 ma 0.5 0.69.5 Gate Trigger oltage ( D = 2, R L = 0 Ω) GT MT2(+), G( ) 0.5 0.77.5 MT2( ), G( ) 0.5 0.72.5 Gate Non Trigger oltage (T J = 25 C) ( D = 2, R L = 0 Ω) 0.2 GD MT2(+), G( ) 0.2 MT2( ), G( ) 0.2 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current See Figure. ( D = 00, I TM =. A, Commutating dv/dt = 8 /µs,gate Open, TJ = 25 C, f = 250 Hz, No Snubber) C L = µf L L = 0 mh d/dt 6.5 A/ms Critical Rate of Rise of Off-State oltage ( D = Rated DRM, Exponential Waveform, Gate Open, T J = 25 C) d/dt 250 /µs
oltage Current Characteristic of SCR Symbol Parameter +C urrent DRM Peak Repetitive Forward Off State oltage TM Quadrant MainTerminal 2 + I DRM Peak Forward Blocking Current I RRM at RRM on state I H RRM I RRM TM Peak Repetitive Reverse Off State oltage Peak Reverse Blocking Current Maximum On State oltage Quadrant 3 I H TM off state + oltage I DRM at DRM I H Holding Current Quadrant Definitions for a Triac Quadrant II Quadrant I I Quadrant III Quadrant I All polarities are referenced to MT. With in phase signals (using standard AC lines) quadrants I and III are used.
Figure. RMS Current Derating Figure 2. On-State Power Dissipation TC, CASE TEMPERATURE (C ) 25 20 5 5 α = 80 α = 20, 90, 60, 30 DC P A, AERAGE POWER (WATTS) 2 8 6 2 20 80 α = 30 90 DC 60 0 0 2 3 5 6 7 8 I T(RMS) 0 0 2 3 5 6 7 8 I T(RMS) Figure 3. On State Characteristics Figure. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0. 0.0 0. 0 t, TIME (ms) 00 Figure 5. Hold Current ariation 0 35 IH, HOLD CURRENT (ma) 30 25 20 5 MT2 NEGATIE MT2 POSITIE 5 90 T J, JUNCTION TEMPERATURE ( C) 0
Figure 6. Gate Trigger Current ariation Figure 7. Gate Trigger oltage ariation Figure 8. Critical Rate of Rise of Off-State oltage (Exponential) Figure 9. Critical Rate of Rise of Commutatingoltage 0 (dv/dt), CRITICAL RATE OF RISE OF (/s µ ) c COMMUTATING OLTAGE T J = 25 C 0 C 75 C DRM t w f = 2 t w (di/dt) c = 6f I TM 00 5 20 25 30 35 0 5 50 55 60 (di/dt) c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) L L N007 200 RMS ADJUST FOR I TM, 60 Hz AC MEASURE I CHARGE TRIGGER CHARGE CONTROL C L TRIGGER CONTROL N9 5 MT2 G MT - + 200
Dimensions Part Marking System SEATING PLANE B F T C S Q A MAC8xG AYWW H Z L G 2 3 N D K U R J 2 3 CASE 22A STYLE x= D, M, or N A= Assembly Location (Optional)* Y= Year WW = Work Week * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. Dim Inches Millimeters Min Max Min Max A 0.570 0.620.8 5.75 B 0.380 0.05 9.66.28 C 0.60 0.90.07.82 D 0.025 0.035 0.6 0.88 F 0.2 0.7 3.6 3.73 G 0.095 0.5 2.2 2.66 H 0. 0.55 2.80 3.93 J 0.0 0.022 0.36 0.55 K 0.500 0.562 2.70.27 L 0.05 0.060.5.52 N 0.90 0.2.83 5.33 Q 0.0 0.20 2.5 3.0 R 0.080 0. 2.0 2.79 S 0.05 0.055.5.39 T 0.235 0.255 5.97 6.7 U 0.000 0.050 0.00.27 0.05.5 Z 0.080 2.0 Pin Assignment Main Terminal 2 Main Terminal 2 3 Gate Main Terminal 2 Ordering Information Device Package Shipping MAC8DG MAC8MG MAC8NG TO-220AB (Pb-Free) 50 Units / Rail. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics