N-Channel -V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A).8 TO-22AB D TO-263 DRAIN connected to TAB G G D S Top View SUPN6-8 G D S Top View SUBN6-8 S N-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS 2 V T C = 25 C Continuous Drain Current (T J = 75 C) T C = C 39 Pulsed Drain Current M 2 A Avalanche Current I AR Repetitive Avalanche Energy a L =. mh E AR 8 mj Power Dissipation T C = 25 C (TO-22AB and TO-263) 2 b P D W T A = 25 C (TO-263) c 3.7 Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C Parameter Symbol Limit Unit Junction-to-Ambientto PCB Mount (TO-263) c Free Air (TO-22AB) R thja 62.5 C/W Junction-to-Case R thjc.25 Notes: a. Duty cycle %. b. See SOA curve for voltage derating. c. When mounted on square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm www.vishay.com FaxBack 8-97- 2-
Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 2 A Gate Threshold Voltage V GS(th) V DS = V GS, S = ma 2. 4. V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = V, V GS = V Zero Gate Voltage Drain Current SS V DS = V, V GS = V, T J = 25 C A V DS = V, V GS = V, T J = 75 C On-State Drain Current a (on) V DS = 5 V, V GS = V A V GS = V, = 3 A.4.8 Drain-Source On-State Resistance a r DS(on) VGS = V, = 3 A, T J = 25 C.24.3 V GS = V, = 3 A, T J = 75 C.3.36 Forward Transconductance a g fs V DS = 5 V, = 3 A 49 S Dynamic b Input Capacitance C iss 2 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz pf Reversen Transfer Capacitance C rss 5 Total Gate Charge c Q g 39 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, = A 2 nc Gate-Drain Charge c Q gd Turn-On Delay Time c t d(on) 2 3 Rise Time c t r VDD = 3 V, R L =.5 3 Turn-Off Delay Time c t d(off) A, V GEN = V, R G = 2.5 25 Fall Time c t f 5 3 ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I s Pulsed Current I SM 2 Forward Voltage a V SD I F = A, V GS = V.6 V Reverse Recovery Time t rr ns Peak Reverse Recovery Current I RM(REC) I F = A, di/dt = A/ s 6. A Reverse Recovery Charge Q rr.4 C Notes: a. Pulse test; pulse width 3 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. A www.vishay.com FaxBack 8-97- 2-2
Output Characteristics Transfer Characteristics 75 V GS =, 9, 8, 7 V 8 6 V 25 5 V 4 V 2 4 6 8 T C = 25 C 2 25 C 55 C 2 4 6 8 V GS Gate-to-Source Voltage (V) 7 Transconductance.2 On-Resistance vs. Drain Current Transconductance (S) g fs C Capacitance (pf) T C = 55 C 25 C 25 C 3 2 2 3 V GS Gate-to-Source Voltage (V) Capacitance 3 2 C iss 2 C oss C rss Gate-to-Source Voltage (V) rds(on) On-Resistance ( Ω ) V GS.6.2.8.4 2 8 8 6 4 2 V GS = V V GS = V = A Gate Charge 2 3 2 3 Q g Total Gate Charge (nc) www.vishay.com FaxBack 8-97- 2-3
rds(on) On-Resistance ( Ω ) (Normalized) 2.4 2..6.2.8.4 On-Resistance vs. Junction Temperature V GS = V = 3 A Source Current (A) I S Source-Drain Diode Forward Voltage T J = C T J = 25 C 25 25 75 25 75 T J Junction Temperature ( C).3.6.9.2.5 V SD Source-to-Drain Voltage (V) 7 3 2 Maximum Avalanche and Drain Current vs. Case Temperature 2 Limited by r DS(on) Safe Operating Area T C = 25 C Single Pulse s s ms ms ms dc 2 8 2 8 T C Case Temperature ( C).. 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. 5 4 3 2 Square Wave Pulse Duration (sec) 3 www.vishay.com FaxBack 8-97- 2-4
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