General Description The MDU4N uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU4N is suitable device for Synchronous Rectification for Server and general purpose applications. MDU4N Single N-channel Trench MOSFET 4V, A, 1.mΩ D D D D D D D D Features = 4V = A @ = V R DS(ON) < 1.mΩ @ = V % UIL Tested % Rg Tested D S S S G G S S S G PDFN56 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 4 V Gate-Source Voltage S ±2 V T C=25 o C (Silicon Limited) 241.5 Continuous Drain Current (1) Power Dissipation T C= o C 152.7 T C=25 o C (Package Limited). T A=25 o C (3) 39. (3) Pulsed Drain Current M 4. T C=25 o C 96.2 T C= o C 38.5 T A=25 o C (3) 2.5 (3) Single Pulse Avalanche Energy (2) E AS 45 mj Junction and Storage Temperature Range T J, T stg -55~15 P D A W o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 5 Thermal Resistance, Junction-to-Case R θjc 1.3 o C/W 1
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDU4NVRH -55~15 o C PDFN56 Tape & Reel Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V 4 - - Gate Threshold Voltage (th) =, = 25μA 1. - 2. V Drain Cut-Off Current SS = 32V, = V - - 1. Gate Leakage Current I GSS = ±2V, = V - - ±.1 μa Drain-Source ON Resistance R DS(ON) = V, =5A -.8 1. mω Forward Transconductance g fs = V, =5A - 185 - S Dynamic Characteristics Total Gate Charge Q g(.v) - 3.5 - Gate-Source Charge Q gs = 2V, = 5A, = V - 18.5 - nc Gate-Drain Charge Q gd - 13.7 - Input Capacitance C iss - 6,892.7 - Reverse Transfer Capacitance C rss = 2V, = V, f = 1.MHz - 147.2 - pf Output Capacitance C oss - 2,58.7 - Turn-On Delay Time t d(on) - 21.8 - Rise Time t r = V, = 2V, - 18.8 - Turn-Off Delay Time t d(off) = 5A, R G = 3.Ω - 96.3 - ns Fall Time t f - 44.1 - Gate Resistance Rg f=1. MHz - 1. - Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 5A, = V -.8 1.2 V Body Diode Reverse Recovery Time t rr I F =5A, dl/dt = A/μs - 57.7 - ns Body Diode Reverse Recovery Charge Q rr - 5.4 - nc Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E AS is tested at starting Tj = 25, L = 1.mH, I AS = 3.A, = V. 3. T < sec. 2
R DS(ON), (Normalized) Drain-Source On-Resistance 1.8 1.6 1.4 1.2 1..8 9 8 7 6 5 4 3 2 V 4.5V 6.V 3.V = 2.5V..2.4.6.8 1., Drain-Source Voltage [V] Fig.1 On-Region Characteristics 1. = V 2. = 5. A Drain-Source On-Resistance [mω] R DS(ON) [mω ], Drain-Source On-Resistance 1.2 1.1 1..9.8 9 8 7 6 5 4 3 2 1 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T J = 25 = V.7 2 3 4 5 6 7 8 9 = 5.A.6-5 -25 25 5 75 125 15 T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature 2 3 4 5 6 7 8 9, Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage 8 7 = V = V 6 5 4 3 2 T J = 25 R, Reverse Drain Current [A] 1 T J = 25 1 2 3 4 5, Gate to Source Volatge [V] Fig.5 Transfer Characteristics..3.6.9 1.2 1.5 V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3
, Gate-Source Voltage [V] 3 2 1 8 6 4 2 Note : = 5A = 2V 2 3 4 5 6 7 8 9 1 Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Q G, Total Gate Charge [nc] us 1 ms ms ms 1s DC Capacitance [pf] 9 8 7 6 5 4 3 2 5 15 2 25 3 35 4 26 24 22 2 18 16 14 12 8 6 C rss C oss C iss, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Fig.8 Capacitance Characteristics Notes ; 1. = V 2. f = 1 MHz -1 Single Pulse T J =Max rated T C =25-1 1 2, Drain-Source Voltage [V] 4 2 25 5 75 125 15 T C, Case Temperature [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case Temperature D=.5 Z θ JA (t), Thermal Response -1-2.2.1.5.2.1 single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ JC * R θ JC (t) + T C -3-4 -3-2 -1 1 2 3 t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 4
Package Dimension PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified MILLIMETERS Dimension Min Max A.9 1. b.33.51 C.2.34 D1 4.5 5. D2-4.22 E 5.9 6.3 E1 5.5 6. E2-4.3 e 1.27BSC H.41.71 K.2 - L.51.71 α 12 5
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