NSVS50030SB3 NSVS50031SB3. Bipolar Transistor ( )50 V, ( )3 A, Low V CE (sat), (PNP)NPN Single

Similar documents
NSVF5501SK RF Transistor for Low Noise Amplifier

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

NVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel

MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)

FJP13007 High Voltage Fast-Switching NPN Power Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

KSH122 / KSH122I NPN Silicon Darlington Transistor

KSC2383 NPN Epitaxial Silicon Transistor

NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L. General Purpose Transistors. NPN Silicon

MUN2214, MMUN2214L, MUN5214, DTC114YE, DTC114YM3, NSBC114YF3. Digital Transistors (BRT) R1 = 10 k, R2 = 47 k

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier

MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

MUN2213, MMUN2213L, MUN5213, DTC144EE, DTC144EM3, NSBC144EF3. Digital Transistors (BRT) R1 = 47 k, R2 = 47 k

(-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA. Large current capacity High-speed switching

S1AFL - S1MFL. Surface General-Purpose Rectifier

BC857BTT1G. General Purpose Transistor. PNP Silicon

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor

High-speed switching Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm) High allowable power dissipation

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS

FDD V P-Channel POWERTRENCH MOSFET

(-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

CPH6532. Bipolar Transistor 50V, 1A, Low VCE(sat) NPN Dual CPH6. Applications. Features. Specifications

HMHA281, HMHA2801 Series. 4-Pin Half-Pitch Mini-Flat Phototransistor Optocouplers

BC846ALT1G Series. General Purpose Transistors. NPN Silicon

2SC5994 Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single

High-speed switching Ultrasmall package permitting applied sets to be small and slim (mounting height : 0.85mm) High allowable power dissipation

Collector Dissipation Tc=25 C 30 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

FGH40N60SFDTU-F V, 40 A Field Stop IGBT

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

Low collector-to-emitter saturation voltage Fast switching speed

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

MUN5311DW1T1G Series.

MCH6541. Bipolar Transistor. ( )30V, ( )3A, Low VCE(sat) Complementary Dual MCPH6

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

FGH12040WD 1200 V, 40 A Field Stop Trench IGBT

BCP53 Series. PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS

MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k

BC846, BC847, BC848. General Purpose Transistors. NPN Silicon

EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon

(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications

BC846BM3T5G. General Purpose Transistor. NPN Silicon

NCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection

UMC2NT1, UMC3NT1, UMC5NT1

MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

FFSH5065A. Silicon Carbide Schottky Diode 650 V, 50 A

NSS60601MZ4. 60 V, 6.0 A, Low V CE(sat) NPN Transistor. 60 VOLTS, 6.0 AMPS 2.0 WATTS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 50 m

2SA608N/2SC536N. Bipolar Transistor. ( )50V, ( )150mA, Low VCE(sat) (PNP)NPN Single NPA-WA. Applicaitons. Features. Specifications ( ) : 2SA608N

NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

BC846ALT1G Series. General Purpose Transistors. NPN Silicon Features

NSS20101J, NSV20101J. 20 V, 1.0 A, Low V CE(sat) NPN Transistor. 20 VOLTS, 1.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS

BAV ma 70 V High Conductance Ultra-Fast Switching Diode

Low collector-to-emitter saturation voltage Large current capacity and wide ASO

BAV103 High Voltage, General Purpose Diode

Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.

FCH023N65S3. Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m

Relay drivers, high-speed inverters, converters, and other general high-current switching applications

NSS60600MZ4, NSV60600MZ4T1G, NSV60600MZ4T3G. 60 V, 6.0 A, Low V CE(sat) PNP Transistor

Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers

MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications

BC856BWT1, SBC856BWT1 Series, BC857BWT1, SBC857BWT1 Series, BC858AWT1 Series. General Purpose Transistors. PNP Silicon

500 mw When mounted on ceramic substrate (250mm 2 0.8mm) 1.3 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C

BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon

MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSS40301MZ4. Bipolar Power Transistors 40 V, 3.0 A, Low V CE(sat) NPN Transistor NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS

NTP082N65S3F. Power MOSFET, N-Channel, SUPERFET III, FRFET, 650 V, 40 A, 82 m

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series. Dual General Purpose Transistors PNP Duals

Low-frequency Amplifer, high-speed switching small motor drive, muting circuit

General Description. Applications. Power management Load switch Q2 3 5 Q1

MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

2SD1835. Bipolar Transistor 50V, 2A, Low VCE(sat), NPN Single NP. Applications

MJD44H11 (NPN) MJD45H11 (PNP)

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

Is Now Part of To learn more about ON Semiconductor, please visit our website at

BC856ALT1G Series. General Purpose Transistors. PNP Silicon

BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

NSTB1002DXV5T1G, NSTB1002DXV5T5G

BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

Low collector to emitter saturation voltage Large current capacity

MMBT3906LT3G. PNP Silicon. Pb-Free Packages are Available. Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

CPH3455. Power MOSFET 35V, 104mΩ, 3A, Single N-Channel

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

High-speed switching applications (switching regulator, driver circuit) Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V

NVMFD5C478NL. Power MOSFET. 40 V, 14.5 m, 29 A, Dual N Channel

Dual N-Channel, Digital FET

Transcription:

NSVSSB, Bipolar Transistor ( ) V, ( ) A, Low V CE (sat), (PNP)NPN Single This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. Suitable for motor driver, relay driver, DC DC converter of automotive applications. AEC Qqualified and PPAP capable. Features Large Current Capacitance Low Collector to Emitter Saturation Voltage High Speed Switching High Allowable Power Dissipation AEC QQualified and PPAP Capable Pb Free, Halogen Free and RoHS Compliance Ultra Small Package Facilitates Miniaturization in End Products (Mounting Height:.9 mm) Typical Applications DC / DC Converter Relay Drivers, Lamp Drivers, Motor Drivers Flash Specifications ABSOLUTE MAXIMUM RATINGS at T A = C Parameter Symbol Value Unit Collector to Base Voltage V CBO ( ) V Collector to Emitter Voltage V CES ( ) V Collector to Emitter Voltage V CEO ( ) V Emitter to Base Voltage V EBO ( )6 V Collector Current I C ( ) A Collector Current (Pulse) I CP ( )6 A Base Current I B ( )6 ma Collector Dissipation (Note ) P C. W Junction Temperature Tj C Storage Temperature Tstg to + C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.. Surface mounted on ceramic substrate. (6 mm x.8 mm) ELECTRICAL CONNECTION NSVSSB XXX M CPH CASE 8BA MARKING DIAGRAMS XXXM ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet. = HAE: NSVSSB = HCE: = Single Digit Date Code Semiconductor Components Industries, LLC, December, 8 Rev. Publication Order Number: NSVSSB/D

NSVSSB, ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) NSVSSBTG HAE CPH NSVSSBSTG HCE (Pb Free / Halogen Free),/ Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8/D. ELECTRICAL CHARACTERISTICS (T C = C unless otherwise noted) Parameter Symbol Conditions Value Min Typ Max Collector Cutoff Current I CBO V CB = ( )4 V, I E = A ( ) μa Emitter Cutoff Current I EBO V EB = ( )4 V, I C = A ( ) μa DC Current Gain h FE V CE = ( ) V, I C = ( ) ma Gain Bandwidth Product f T V CE = ( ) V, I C = ( ) ma Output Capacitance Cob V CB = ( ) V, f = MHz Collector to Emitter Saturation Voltage V CE (sat) I C = ( ) A, I B = ( ) ma I C = ( ) A, I B = ( ) ma Base to Emitter Saturation Voltage V BE (sat) I C = ( ) A, I B = ( ) ma 6 Unit (6) 8 MHz (4) pf ( ) 8 ( ) mv ( 8) 4 ( ) mv ( ).88 ( ). V Collector to Base Breakdown Voltage V (BR)CBO I C = ( ) A, I E = A ( ) V Collector to Emitter Breakdown Voltage V (BR)CES I C = ( ) A, R BE = ( ) Collector to Emitter Breakdown Voltage V (BR)CEO I C = ( ) ma, R BE = ( ) V Emitter to Base Breakdown Voltage V (BR)EBO I E = ( ) A, I C = A Turn On Time t on See Fig. () ns Storage Time t stg () ns Fall Time t f () ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ( )6 V V PW= s DC % INPUT IB IB OUTPUT PW= s DC % INPUT IB IB OUTPUT VR RB + + F 4 F RL VR RB + + F 4 F RL V BE = V V CC = V V BE = V V CC = V I B = I B = I C = A I B = I B = I C = A NSVSSB Figure. Switching Time Test Circuit

NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS..6..8.4 NSVSSB ma 4 ma I B = ma..4.6.8. V CE, Collector to Emitter Voltage [V] Figure. I C V CE ma ma 8 ma 6 ma 4 ma ma. 4. 4........ ma.4.8..6. Figure. I C V CE 8 ma 6 ma 4 ma ma ma ma I B = ma V CE, Collector to Emitter Voltage [V].. NSVSSB V CE = V.. V CE = V.... C C....4..6..8.9...4.6.8. V BE, Base to Emitter Voltage [V] V BE, Base to Emitter Voltage [V].... C C Figure 4. I C V BE Figure. I C V BE h FE, DC Current Gain C C NSVSSB V CE = V h FE, DC Current Gain, V CE = V C C...... Figure 6. h FE I C Figure. h FE I C

NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS (Continued) f T, Gain Bandwidth Product [MHz] NSVSSB V CE = V... f T, Gain Bandwidth Product [MHz] V CE = V... Figure 8. f T I C Figure 9. f T I C Cob, Output Capacitance [pf] NSVSSB f = MHz Cob, Output Capacitance [pf] f = MHz. V CB, Collector to Base Voltage [V].. V CB, Collector to Base Voltage [V] Figure. Cob V CB Figure. Cob V CB V CE (sat), Collector to Emitter NSVSSB I C / I B = C C... V CE (sat), Collector to Emitter C I C / I B = C... Figure. V CE (sat) I C Figure. V CE (sat) I C 4

NSVSSB, TYPICAL PERFORMANCE CHARACTERISTICS (Continued) V CE (sat), Collector to Emitter NSVSSB I C / I B = C C... Figure 4. V CE (sat) I C V CE (sat), Collector to Emitter C I C / I B = C... Figure. V CE (sat) I C NSVSSB I C / I B = I C / I B = V BE (sat), Base to Emitter T A = C C C V BE (sat), Base to Emitter T A = C C C...... Figure 6. V BE (sat) I C Figure. V BE (sat) I C.. DC operation NSVSSB/ ms ms ms s s T A = C Single Pulse Mounted on a ceramic board (6 mm x.8 mm) For PNP minus sign is omitted... V CE, Collector to Emitter Voltage [V] P C, Collector Dissipation [W]...9.8..6..4... T A, Ambient Temperature [ C] Figure 8. ASO Figure 9. P C T A

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS CPH CASE 8BA ISSUE O DATE NOV DOCUMENT NUMBER: STATUS: NEW STANDARD: Semiconductor Components Industries, LLC, October, Rev. DESCRIPTION: 98AON64E ON SEMICONDUCTOR STANDARD CPH http://onsemi.com Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped CONTROLLED COPY in red. Case Outline Number: PAGE OF XXX

DOCUMENT NUMBER: 98AON64E PAGE OF ISSUE REVISION DATE O RELEASED FOR PRODUCTION FROM SANYO ENACT# TC TO ON NOV SEMICONDUCTOR. REQ. BY D. TRUHITTE. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Semiconductor Components Industries, LLC, November, Rev. O Case Outline Number: 8BA

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 9 E. nd Pkwy, Aurora, Colorado 8 USA Phone: 6 or 8 44 86 Toll Free USA/Canada Fax: 6 6 or 8 44 86 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 8 8 98 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 4 9 9 ON Semiconductor Website: Order Literature: http:///orderlit For additional information, please contact your local Sales Representative