Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to On-State Current Rating of. Amperes RMS at C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt 5 V/µs minimum at 5 C Minimizes Snubber Networks for Protection Industry Standard TO-AB Package High Commutating di/dt 6.5 A/ms minimum at 5 C Device Marking: Logo, Device Type, e.g., MACD, Date Code MAXIMUM RATINGS (TJ = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage() (TJ = 4 to 5 C, Sine Wave, 5 to 6 Hz, Gate Open) MACD MACM MACN On-State RMS Current (Full Cycle Sine Wave, 6 Hz, TC = C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 6 Hz, TJ = 5 C) Circuit Fusing Consideration (t =.3 ms) Peak Gate Power (Pulse Width. µs, TC = C) Average Gate Power (t =.3 ms, TC = C) VDRM, VRRM 4 6 IT(RMS). Amps ITSM Amps It 6 Asec PGM 6 Watts PG(AV). Watt Operating Junction Temperature Range TJ 4 to +5 Storage Temperature Range Tstg 4 to +5 () VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. C C TRIACS AMPERES RMS 4 thru VOLTS MT 3 TO AB CASE A STYLE 4 ORDERING INFORMATION Device Package Shipping MACD TOAB 5 Units/Rail 4 PIN ASSIGNMENT Main Terminal Main Terminal 3 Gate 4 Main Terminal G MT MACM TOAB 5 Units/Rail MACN TOAB 5 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 999 January, Rev. Publication Order Number: MACD/D
THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Characteristic Symbol Value Unit Maximum Lead Temperature for Soldering Purposes / from Case for Seconds TL 6 C RθJC RθJA. 6.5 C/W ELECTRICAL CHARACTERISTICS (TJ = 5 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 5 C TJ = 5 C ON CHARACTERISTICS Peak On-State Voltage* (ITM = ± A Peak) IDRM, IRRM.. VTM..6 Gate Trigger Current (Continuous dc) (VD = V, RL = Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) Holding Current (VD = V, Gate Open, Initiating Current = ±5 ) Latching Current (VD = 4 V, IG = ) MT(+), G(+); MT( ), G( ) MT(+), G( ) Gate Trigger Voltage (VD = V, RL = Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) Gate Non Trigger Voltage (VD = V, RL = Ω, TJ = 5 C) MT(+), G(+); MT(+), G( ); MT( ), G( ) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current See Figure. (VD = 4 V, ITM = 4.4 A, Commutating dv/dt = V/µs, Gate Open, TJ = 5 C, f = 5 Hz, No Snubber) CL = µf LL = 4 mh Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 5 C) *Indicates Pulse Test: Pulse Width. ms, Duty Cycle %. IGT 3 6 4 IL VGT VGD 3.69.77.7 5.5.5.5. (di/dt)c 6.5 A/ms dv/dt 5 V/µs 9
Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol VDRM IDRM VRRM IRRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current IRRM at VRRM on state VTM Quadrant MainTerminal + VTM Maximum On State Voltage Holding Current off state + Voltage IDRM at VDRM Quadrant 3 MainTerminal V TM Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II ( ) IGT (+) IGT Quadrant I MT MT IGT + IGT ( ) MT ( ) MT Quadrant III ( ) IGT (+) IGT Quadrant IV MT MT MT NEGATIVE (Negative Half Cycle) All polarities are referenced to MT. With in phase signals (using standard AC lines) quadrants I and III are used. 36
TC, CASE TEMPERATURE ( C) 5 5 5 α = α =, 9, 6, 3 DC P AV, AVERAGE POWER (WATTS) 6 4 α = 3 9 DC 6 3 4 5 6 IT(RMS), RMS ON-STATE CURRENT (AMP) 7 3 4 5 6 IT(RMS), ON-STATE CURRENT (AMP) 7 Figure. RMS Current Derating Figure. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMP) TYPICAL AT TJ = 5 C MAXIMUM @ TJ = 5 C MAXIMUM @ TJ = 5 C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)... 4 t, TIME (ms) Figure 4. Thermal Response 4, HOLD CURRENT () 3 5 5 MT NEGATIVE MT POSITIVE. 5.5.5 3 3.5 4 4.5 5 5 3 3 5 7 9 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 3. On-State Characteristics Figure 5. Hold Current Variation 36
IGT, TRIGGER CURRENT ().95 Q Q3 Q V GT, TRIGGER VOLTAGE (VOLT).9 Q3.5. 75.7 Q.65.6 5.45 5 3 3 5 7 9 3.4 5 3 3 5 7 9 3 Q Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation (V/ µ s) dv/dt, CRITICAL RATE OF RISE OF OFF-STATE VOLTAGE 5 4.5K 4K 3.5K 3K.5K K.5K K 5 MT POSITIVE MT NEGATIVE RG, TO MAIN TERMINAL RESISTANCE (OHMS) Figure. Critical Rate of Rise of Off-State Voltage (Exponential) (dv/dt), CRITICAL RATE OF RISE OF (V/ µ s) c COMMUTATING VOLTAGE TJ = 5 C C 75 C f = t w t w (di/dt) c = 6f I TM V DRM 5 5 3 4 45 5 55 6 (di/dt)c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 9. Critical Rate of Rise of Commutating Voltage LL N47 VRMS ADJUST FOR ITM, 6 Hz VAC MEASURE I CHARGE TRIGGER CHARGE CONTROL NON-POLAR CL TRIGGER CONTROL N94 MT 5 G MT + V Note: Component values are for verification of rated (di/dt)c. See AN4 for additional information. Figure. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c 36