ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 60V; R DS(ON) = I D = 5.1A DESCRIPTION FEATURES APPLICATIONS

Similar documents
NOT RECOMMENDED FOR NEW DESIGN

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = I D = 4.6A DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -40V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =20V : R DS ( on )=0.06 DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXM62N03E6. Not Recommended for New Design Please Use ZXMN3A01E6TA 30V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = 0.02 ;I D = 8.5A DESCRIPTION FEATURES SO8 APPLICATIONS

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS =-30V; R DS(ON) =0.15

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -60V; R DS(ON) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = 100V : R DS(on) = 0.7 I D = 0.8A DESCRIPTION FEATURES SOT23 APPLICATIONS

ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =30V : R DS ( on )=0.065

ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.07 DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =100V : R DS(on) =0.7 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 40V; R DS(ON) = 0.05 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE = 0.7 ; I D = 1.0 ; I D = -1.3A

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = ;I D = 6.2A DESCRIPTION FEATURES APPLICATIONS

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET N/C N/C SOT23-5 PINOUT - TOP VIEW SUMMARY V (BR)DSS =-200V; R DS(ON) = 28

ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT89 S D

ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT23-6

ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT223 S D

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A SOT23-6

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.13Ω; ID=2.4A MSOP8

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A SOT23

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18 ; ID=1.7A SOT23

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET N/C SUMMARY V (BR)DSS = 450V; R DS(ON) = 50 ORDERING INFORMATION DEVICE MARKING ZXMN 0545

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET

120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = 60V : R SAT = 30m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 30V : R SAT = 28m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8

ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 60V : R SAT = 35m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -30V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZXM64P02 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.090 ; ID= -3.5A MSOP8

ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 100V : R SAT = 36m DESCRIPTION FEATURES

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A

ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A

ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK. SUMMARY BV CEO = 30V : R SAT = 33m. typical; I C = 7A DESCRIPTION FEATURES APPLICATIONS PINOUT

FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = -60V : R SAT = 38m DESCRIPTION FEATURES APPLICATIONS

ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZXTAM322. MPPS Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR. SUMMARY V CEO = 15V; R SAT = 45m ;I C = 4.5A

ZXT1M322. MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = -12V; R SAT = 60m ;I C = -4A DESCRIPTION

ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR

ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8

ZXTDC3M832. MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE. SUMMARY V BR =25V; I R =20nA; C d =33pF(Nom)

ZXT2M322. MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = 20V; R SAT = 64m

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;

ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE SUMMARY

MDS9652E Complementary N-P Channel Trench MOSFET

SSF6014D 60V N-Channel MOSFET

SSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description

Applications. Devices are identified by type. Colour of marking: BYP53- black, BYP54 red

ZXCT1008 AUTOMOTIVE HIGH-SIDE CURRENT MONITOR APPLICATIONS

IRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D

Linear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C

UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)

Applications. BYY53-75; ; BYY The package quantities for the different package

SSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)

P-Channel Enhancement Mode Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET

Applications. BYY57-75; ; BYY The package quantities for the different package

Obsolete Product(s) - Obsolete Product(s)

V DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET

Characteristics Symbol Rating Unit

Applications. Device Quantity per box Options BYY57-75; ; BYY BYY58-75; ; BYY

ZXMHC3F381N8 30V SO8 Complementary enhancement mode MOSFET H-Bridge

UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET

V DSS R DS(on) max (mω)

MDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω

ZXMC10A816N8 100V SO8 Complementary Dual enhancement mode MOSFET

T C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET

HEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

ZXCT1008 AUTOMOTIVE HIGH-SIDE CURRENT MONITOR APPLICATIONS

ZAMP MHz MMIC WIDEBAND AMPLIFIER LNA, 15dB Gain, Very Low Current

ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge

UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET

SSF11NS65UF 650V N-Channel MOSFET

LNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

WPM2005 Power MOSFET and Schottky Diode

MDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω

ZDT1048 SM-8 Dual NPN medium power high gain transistors

STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET

Transcription:

60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 60V; R DS(ON) = 0.045 I D = 5.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance SOT223 Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Relay and Solenoid driving Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL TA 7 12mm 1000 units TC 13 12mm 4000 units DEVICE MARKING ZXMN 6A09 Top View 1

ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 60 V Gate Source Voltage V GS 20 V Continuous Drain Current (V GS =10V; T A =25 C) (b) (V GS =10V; T A =70 C) (b) (V GS =10V; T A =25 C) (a) I D 6.9 5.6 5.0 Pulsed Drain Current (c) I DM 30.6 A Continuous Source Current (Body Diode) (b) I S 3.5 A Pulsed Source Current (Body Diode) (c) I SM 30.6 A Power Dissipation at T A =25 C (a)(d) Linear Derating Factor Power Dissipation at T A =25 C (b)(d) Linear Derating Factor P D 2.0 16 P D 3.9 31 A W mw/ C W mw/ C Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(d) R θja 62.5 C/W Junction to Ambient (b)(d) R θja 32.2 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. 2

CHARACTERISTICS 3

ELECTRICAL CHARACTERISTICS (at TA = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS 60 V I D =250µA, V GS =0V Zero Gate Voltage Drain Current I DSS 1 µa V DS =60V, V GS =0V Gate-Body Leakage I GSS 100 na V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) 1.0 V I D =250µA, V DS =V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.045 0.070 Ω Ω V GS =10V, I D =8.2A V GS =4.5V, I D =7.4A Forward Transconductance (3) g fs 15 S V DS =15V,I D =8.2A DYNAMIC (3) Input Capacitance C iss 1407 pf Output Capacitance C oss 121 pf V DS =40V,V GS =0V, f=1mhz Reverse Transfer Capacitance C rss 59 pf SWITCHING(2) (3) Turn-On Delay Time t d(on) 4.9 ns Rise Time t r 5.0 ns Turn-Off Delay Time t d(off) 25.3 ns Fall Time t f 4.6 ns V DD =15V, I D =3.5A R G 6.0Ω, V GS =10V (refer to test circuit) Gate Charge Q g 12.4 nc V DS =15V,V GS =5V, I D =3.5A Total Gate Charge Q g 24.2 nc Gate-Source Charge Q gs 5.2 nc Gate-Drain Charge Q gd 3.5 nc V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J =25 C, I S =6.6A, V GS =0V Reverse Recovery Time (3) t rr 26.3 ns T J =25 C, I F =3.5A, di/dt= 100A/µs Reverse Recovery Charge (3) Q rr 26.6 nc NOTES (1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 4

TYPICAL CHARACTERISTICS 5

6

PACKAGE OUTLINE PAD LAYOUT DETAILS 4.6 2.0 min (3x) 6.8 2.3 1.5 min (3x) 2.0 min 3.8 min PACKAGE DIMENSIONS DIM MILLIMETRES MILLIMETRES DIM MIN MAX MIN MAX A 1.80 D 6.30 6.70 A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 7.30 b2 2.90 3.10 E1 3.30 3.70 C 0.23 0.33 L 0.90 Zetex plc 2003 Europe Americas Asia Pacific Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 7