SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction with Built in Base Emitter Resistors to Limit Leakage Multiplication Choice of Packages MJE700 and MJE800 series T0220AB, MJE700T and MJE800T MAXIMUM RATINGS MJE702 MJE700,T ÎÎÎ Rating Symbol MJE800,T MJE703 ÎÎÎ MJE802 MJE803 Unit Collector Emitter Voltage VCEO 60 80 ÎÎÎ V Collector Base Voltage VCB 60 80 ÎÎÎ V Emitter Base Voltage VEB ÎÎÎ V Collector Current IC 4.0 ÎÎÎ A Base Current IB ÎÎÎ A ÎÎÎ CASE 77 TO 220 ÎÎÎ Total Power Dissipation @ TC = 25 C PD 40 50 ÎÎÎ Watts Derate above 25 C 2 0.40 W/ C Operating and Storage Junction Î TJ, Tstg ÎÎÎ 55 to +150 ÎÎÎ C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC Î CASE 77 ÎÎ 3.13 ÎÎÎ C/W TO 220 2.50 50 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT CASE 77 08 TO 225AA TYPE MJE700 703 MJE800 803 PD, POWER DISSIPATION (WATTS) 40 30 20 TO 126 TO 220AB CASE 221A 06 TO 220AB MJE700T MJE800T REV 3 0 25 50 75 0 125 150 TC, CASE TEMPERATURE ( C) Figure 1. Power Derating Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1
ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (1) MJE700,T, MJE800,T V(BR)CEO 60 ÎÎÎ V (IC = 50 ma, IB = 0) MJE702, MJE703, MJE802, MJE803 80 Collector Cutoff Current ICEO µa (VCE = 60 V, IB = 0) MJE700,T, MJE800,T 0 ÎÎÎ (VCE = 80 V, IB = 0) MJE702, MJE703, MJE802, MJE803 ÎÎ 0 Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) ICBO 0 µa Collector Cutoff Current (VCB = Rated BVCEO, IE = 0, TC = 0 C) 500 ÎÎÎ Emitter Cutoff Current (VBE = V, IC = 0) IEBO ÎÎÎ ma ON CHARACTERISTICS DC Current Gain (1) ÎÎÎ hfe ÎÎ (IC = 1.5 A, VCE = V) MJE700,T, MJE702, MJE800,T, MJE802 750 (IC = A, VCE = V) MJE703, MJE803 750 ÎÎÎ (IC = 4.0 A, VCE = V) All devices 0 ÎÎÎ Collector Emitter Saturation Voltage (1) (IC = 1.5 A, IB = 30 ma) MJE700,T, MJE702, MJE800,T, MJE802 ÎÎ (IC = A, IB = 40 ma) MJE703, MJE803 VCE(sat) V 2.5 ÎÎÎ ÎÎ 2.8 (IC = 4.0 A, IB = 40 ma) All devices Base Emitter On Voltage (1) (IC = 1.5 A, VCE = V) MJE700,T, MJE702, MJE800,T, MJE802 ÎÎ VBE(on) V 2.5 ÎÎÎ (IC = A, VCE = V) MJE703, MJE803 (IC = 4.0 A, VCE = V) All devices 2.5 ÎÎÎ DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 1.5 A, VCE = V, f = MHz) hfe ÎÎÎ (1) Pulse Test: Pulse Width 300 µs, Duty Cycle %. R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS D 1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE I B 0 ma MSD60 USED BELOW I B 0 ma V 2 APPROX + 8.0 V r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 V 1 APPROX 12 V t r, t f ns DUTY CYCLE = % 0.07 0.03 0.02 Figure 2. Switching Times Test Circuit D = 0.02 25 µs 51 SINGLE PULSE R B D 1 6.0 k 150 + 4.0 V TUT V CC 30 V For t d and t r, D 1 id disconnected and V 2 = 0, R B and R C are varied to obtain desired test currents. For NPN test circuit, reverse diode, polarities and input pulses. R C SCOPE t, TIME ( µ s) 4.0 0.8 ts 0.4 td @ VBE(off) = 0 PNP NPN 0.04 0.06 0.4 ZθJC(t) = r(t) RθJC RθJC = 2.50 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) ZθJC(t) Figure 3. Switching Times 0.02 20 50 0 200 500 k t, TIME (ms) Figure 4. Thermal Response (MJE700T, 800T Series) VCC = 30 V IC/IB = 250 P(pk) IB1 = IB2 t1 t 2 DUTY CYCLE, D = t1/t2 tf tr 4.0 2 Motorola Bipolar Power Transistor Device Data
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.07 0.03 0.02 D = SINGLE PULSE θjc(t) = r(t) θjc θjc = 3.12 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) θjc(t) P(pk) t1 t 2 DUTY CYCLE, D = t1/t2 0.02 0.03 20 30 50 0 200 300 500 00 t, TIME (ms) Figure 5. Thermal Response (MJE700, 800 Series) I C, COLLECTOR CURRENT (AMP) ms ms 20 MJE702, 703 MJE700 ACTIVE REGION SAFE OPERATING AREA 0 µs ms 30 50 70 0 I C, COLLECTOR CURRENT (AMP) ms 20 MJE802, 803 MJE800 30 50 0 µs 70 0 Figure 6. MJE700 Series There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 7. MJE800 Series The data of Figures 6 and 7 are based on TJ(pk) = 150 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to % provided TJ(pk) < 150 C. TJ(pk) may be calculated from the data in Figure 4 or 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. ms 0 µs ms ms 0 µs ms 20 30 50 70 0 20 30 50 70 0 Figure 8. MJE700T Figure 9. MJE800T Motorola Bipolar Power Transistor Device Data 3
PNP MJE700, T Series NPN MJE800, T Series 6.0 k 4.0 k TJ = 125 C VCE = V 6.0 k 4.0 k TJ = 125 C VCE = V hfe, DC CURRENT GAIN k k k 800 600 25 C 55 C hfe, DC CURRENT GAIN k k k 800 600 25 C 55 C 400 300 0.04 0.06 0.4 400 300 4.0 0.04 0.06 0.4 4.0 Figure. DC Current Gain 3.4 2.6 IC = A A A 4.0 A IB, BASE CURRENT (ma) 20 50 0 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 3.4 2.6 IC = A Figure 11. Collector Saturation Region A A 4.0 A IB, BASE CURRENT (ma) 20 50 0 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 VBE @ VCE = V V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 250 VCE(sat) @ IC/IB = 250 VBE @ VCE = V 0.04 0.06 0.4 4.0 0.04 Figure 12. On Voltages 0.06 0.4 4.0 4 Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS H Q B U 1 2 3 V G S F A K D 2 PL M J C R 5 (0.0) M A M B M 5 (0.0) M A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.425 0.435.80 14 B 95 05 7.50 7.74 C 0.095 2.42 2.66 D 0.020 0.026 1 6 F 15 30 2.93 3.30 G 0.094 BSC 2.39 BSC H 0 0.095 1.27 2.41 J 5 0.025 9 3 K 75 55 14.61 16.63 M 5 TYP 5 TYP Q 48 58 3.76 4.01 R 0.045 5 1.15 1.39 S 0.025 0.035 4 0.88 U 45 55 3.69 3.93 V 0.040 2 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77 08 TO 225AA TYPE ISSUE V Motorola Bipolar Power Transistor Device Data 5
PACKAGE DIMENSIONS CONTINUED H Q Z L V G B 4 1 2 3 N D A K F T U R J S C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 70 20 14.48 15.75 B 80 0.405 9.66.28 C 60 90 4.07 4.82 D 0.025 0.035 4 0.88 F 42 47 3.61 3.73 G 0.095 2.42 2.66 H 55 2.80 3.93 J 8 0.025 0.46 4 K 00 62 12.70 14.27 L 0.045 0.060 1.15 1.52 N 90 4.83 5.33 Q 0.0 20 2.54 4 R 0.080 4 2.79 S 0.045 5 1.15 1.39 T 35 55 5.97 6.47 U 0.000 0 0.00 1.27 V 0.045 1.15 Z 0.080 4 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 221A 06 TO 220AB ISSUE Y Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 20912; Phoenix, Arizona 85036. 1 800 441 2447 6F Seibu Butsuryu Center, 3 14 2 Tatsumi Koto Ku, Tokyo 135, Japan. 03 3521 8315 MFAX: RMFAX0@email.sps.mot.com TOUCHTONE (602) 244 6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: http://design NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852 26629298 6 Motorola Bipolar Power Transistor Device Data MJE700/D