TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 70 @ I C =.0 dc Collector Emitter Saturation Voltage V CE(sat) = 1.1 Vdc (Max) @ I C =.0 dc Excellent Safe Operating rea These are Pb Free Devices* 15 MPERE POWER TRNSISTORS COMPLEMENTRY SILICON 60 VOLTS, 90 WTTS MXIMUM RTINS Rating Symbol Value Unit Collector Emitter Voltage V CEO 60 Vdc Collector Emitter Voltage V CER 70 Vdc Collector Base Voltage V CB 100 Vdc Emitter Base Voltage V EB 7.0 Vdc Collector Current Continuous I C 1 5 dc Base Current I B 7.0 dc Total Power Dissipation @ T C = 25 C Derate above 25 C P D 90 0.72 W W/ C CSE 30D STYLE 1 CSE 30L STYLE 3 Operating and Storage Junction Temperature Range T J, T stg 65 to + 150 C THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 1.39 C/W Thermal Resistance, Junction to mbient R J 35.7 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: Effective June 2012 this device will be available only in the package. Reference FPCN# 16827. ORDERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. * 1
MRKIN DIRMS TO 218 1 BSE YWW 2 COLLECTOR 3 EMITTER YWW 1 BSE 3 EMITTER 2 COLLECTOR Y WW = Device Code = ssembly Location = Year = Work Week = Pb Free Package ORDERIN INFORMTION Device Package Shipping TIP3055 TIP2955 TIP3055 TIP2955 2
ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Max Unit OFF CHRCTERISTICS Collector Emitter Sustaining Voltage (Note 1) V CEO(sus) Î (I C = 30 mdc, I B = 0) ÎÎ 60 Î Vdc I CER Î 1.0 mdc (V CE = 70 Vdc, R BE = 100 Ohms) Î I (V CE = 30 Vdc, I B = 0) CEO Î 0.7 mdc Î I CEV Î (V CE = 100 Vdc, V BE(off) = 1.5 Vdc) ÎÎ 5.0 mdc Î Emitter Cutoff Current I EBO Î 5.0 mdc (V BE = 7.0 Vdc, I C = 0) ON CHRCTERISTICS (Note 1) DC Current ain h (I C =.0 dc, V CE =.0 Vdc) FE Î (I C = 10 dc, V CE =.0 Vdc) ÎÎ 20 70 5.0 Î Collector Emitter Saturation Voltage V CE(sat) Vdc (I C =.0 dc, I B = 00 mdc) (I C = 10 dc, I B = 3.3 dc) ÎÎ 1.1 Î 3.0 Î Î Base Emitter On Voltage V BE(on) 1.8 Vdc (I C =.0 dc, V CE =.0 Vdc) ÎÎ SECOND BREKDOWN Second Breakdown Collector Current with Base Forward Biased I s/b 3.0 Î dc (V CE = 30 Vdc, t = 1.0 s; Nonrepetitive) ÎÎ DYNMIC CHRCTERISTICS Current ain Bandwidth Product f (I C = 0.5 dc, V CE = 10 Vdc, f = 1.0 MHz) T 2.5 Î MHz Î Small Signal Current ain h fe 15 (V CE =.0 Vdc, I C = 1.0 dc, f = 1.0 khz) ÎÎ khz NOTE: For additional design curves, refer to electrical characteristics curves of 2N3055. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 3
1000 hfe, DC CURRENT IN 100 V CE =.0 V T J = 25 C TIP3055 TIP2955 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I C, COLLECTOR CURRENT (MP) Figure 1. DC Current ain IC, COLLECTOR CURRENT (MPS) 100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 SECONDRY BREKDOWN LIMIT BONDIN WIRE LIMIT THERML LIMIT @ T C = 25 C T J = 150 C 0.1 1.0 2.0.0 6.0 10 20 dc 1.0 ms 10 ms 0 60 V CE, COLLECTOR-EMITTER VOLTE (VOLTS) 300 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T C = 25 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. Figure 2. Maximum Rated Forward Bias Safe Operating rea
PCKE DIMENSIONS CSE 30D 02 ISSUE E B Q E C NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, 1982. 2. CONTROLLIN DIMENSION: MILLIMETER. K S L U V 1 2 3 D J H MILLIMETERS INCHES DIM MIN MX MIN MX --- 20.35 --- 0.801 B 1.70 15.20 0.579 0.598 C.70.90 0.185 0.193 D 1.10 1.30 0.03 0.051 E 1.17 1.37 0.06 0.05 5.0 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L --- 16.20 --- 0.638 Q.00.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U.00 REF 0.157 REF V 1.75 REF 0.069 STYLE 1: PIN 1. BSE 2. COLLECTOR 3. EMITTER. COLLECTOR CSE 30L 02 ISSUE F N K F 2 PL B U L 1 2 3 P Y W J D 3 PL 0.25 (0.010) M Y Q S C T E H Q 0.63 (0.025) M T B M NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, 1982. 2. CONTROLLIN DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MX MIN MX 20.32 21.08 0.800 8.30 B 15.75 16.26 0.620 0.60 C.70 5.30 0.185 0.209 D 1.00 1.0 0.00 0.055 E 1.90 2.60 0.075 0.102 F 1.65 2.13 0.065 0.08 5.5 BSC 0.215 BSC H 1.50 2.9 0.059 0.098 J 0.0 0.80 0.016 0.031 K 19.81 20.83 0.780 0.820 L 5.0 6.20 0.212 0.2 N.32 5.9 0.170 0.216 P ---.50 --- 0.177 Q 3.55 3.65 0.10 0.1 U 6.15 BSC 0.22 BSC W 2.87 3.12 0.113 0.123 STYLE 3: PIN 1. BSE 2. COLLECTOR 3. EMITTER. COLLECTOR 5