V RRM = 4 V I F = 2x 65 A ABB HiPak DIODE Module Doc. No. 5SYA 1599-5 9-216 Ultra low-loss, rugged SPT + diode Smooth switching SPT + diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance Improved high reliability package Recognized under UL1557, File E196689 Maximum rated values 1) Parameter Symbol Conditions min max Unit Repetitive peak reverse voltage VRRM 4 V DC forward current IF 65 A Peak forward current IFRM tp = 1ms 13 A Total power dissipation Ptot Tc = 25 C, per diode 335 W Surge current IFSM VR = V, Tvj = 125 C, tp = 1 ms, half-sinewave 53 A Isolation voltage Visol 1 min, f = 5 Hz 1.2 kv Junction temperature Tvj 125 C Junction operating temperature Tvj(op) -5 125 C Case temperature Tc -5 125 C Storage temperature Tstg -5 125 C 1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 6747
Diode characteristic values 2) Forward voltage 3) VF IF = 65 A Continuous reverse current IR VR = 4 V Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy Irr Qrr trr Erec VR = 28 V, IF = 65 A, VGE = 15 V, di/dt = 42 A/µs L = 15 nh inductive load, switch: 5SNA 65J453 Tvj = 25 C 3.1 Tvj = 125 C 3.4 Tvj = 25 C 1 Tvj = 125 C 16 32 Tvj = 25 C 83 Tvj = 125 C 93 Tvj = 25 C 56 Tvj = 125 C 93 Tvj = 25 C 118 Tvj = 125 C 17 Tvj = 25 C 91 Tvj = 125 C 161 Module stray inductance L AC per diode 36 nh Resistance, terminal-chip RAA +CC per diode 2) Characteristic values according to IEC 6747 2 3) Forward voltage is given at chip level TC = 25 C.2 TC = 125 C.3 V ma A µc ns mj mω Package properties 4) Diode thermal resistance junction to case Diode thermal resistance 5) case to heatsink Partial discharge extinction voltage Rth(j-c)DIODE.3 K/W Rth(c-s)DIODE diode per switch, grease = 1W/m x K.27 K/W Ve f = 5 Hz, QPD 1pC (acc. to IEC 61287) 51 V Comparative tracking index CTI 6 Mechanical properties 4) Dimensions L x W x H Typical, see outline drawing 13 x 14 x 48 mm Clearance distance in air Surface creepage distance Mounting torques 5) da ds according to IEC 6664-1 and EN 5124-1 according to IEC 6664-1 and EN 5124-1 Term. to base: 4 Term. to term: 26 Term. to base: 64 Term. to term: 56 Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 1 Mass m 98 g 4) Package and mechanical properties according to IEC 6747 15 5) For detailed mounting instructions refer to ABB document no. 5SYA 239-1 mm mm Nm Doc. No. 5SYA 1599-5 9-216 page 2 of 5
Electrical configuration C (7) C (5) A (6) A (4) Outline drawing 5) Note: all dimensions are shown in mm 5) For detailed mounting instructions refer to ABB document no. 5SYA 239-1 This is an electrostatic sensitive device, please observe the international standard IEC 6747-1, chap. VIII. This product has been designed and qualified for industrial level. Doc. No. 5SYA 1599-5 9-216 page 3 of 5
Erec [mj], Irr [A], Qrr [µc] 2 V CC = 28 V V GE = ±15 V R G = 2.2 ohm C GE = 15 nf L = 15 nh E rec I rr Q rr Erec [mj],irr [A], Qrr [µc] 2 E rec Q rr RG = 1 ohm RG = 6.8 ohm RG = 4.7 ohm RG = 3.3 ohm RG = 2.2 ohm E rec [mj] = -1.1 x 1-3 x I F 2 + 2.74 x I F + 286 325 65 975 13 1625 I rr V CC = 28 V I F = 65 A C GE = 15 nf L = 15 nh 1 2 3 4 5 I F [A] di/dt [ka/µs] Fig. 1 Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 13 V CC 36 V di/dt 4 ka/µs 975 25 C IF [A] 65 125 C I R [A] 325 1 2 3 4 5 V F [V] 2 3 4 V R [V] Fig. 3 Typical diode forward characteristics, chip level Fig. 4 Safe operating area diode (SOA) Doc. No. 5SYA 1599-5 9-216 page 4 of 5
Zth(j-c) [K/W] IGBT, DIODE.1.1.1 Z th(j-c) Diode DIODE Analytical function for transient thermal impedance: Z th (j-c) (t) = n i 1 R i (1- e -t/ i i 1 2 3 4 5 Ri(K/kW) 2 7.1 3.46 i(ms) 191.5 22.6 3.1 ).1.1.1.1 1 1 t [s] Fig. 5 Thermal impedance vs time Related documents: 5SYA 242 Failure rates of HiPak modules due to cosmic rays 5SYA 243 Load cycle capability of HiPaks 5SYA 245 Thermal runaway during blocking 5SYA 253 Applying IGBT 5SYA 257 IGBT diode safe operating area (SOA) 5SYA 258 Surge currents for IGBT diodes 5SYA 293 Thermal design of IGBT modules 5SYA 298 Paralleling of IGBT modules 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 912 Specification of environmental class for HiPak We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded. ABB Switzerland Ltd Doc. No. 5SYA 1599-5 9-216 Semiconductors Fabrikstrasse 3 CH-56 Lenzburg, Switzerland Telephone +41 ()58 586 1419 Fax +41 ()58 586 136 Email abbsem@ch.abb.com Internet www.abb.com/semiconductors