QH8MA3 30V Nch+Pch Middle Power MOSFET Datasheet loutline Symbol Tr1:Nch Tr2:Pch TSMT8 V DSS 30V -30V R DS(on) (Max.) 29mΩ 48mΩ I D ±7.0A ±5.5A P D 2.5W lfeatures 1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. linner circuit lpackaging specifications Packing Embossed Tape lapplication Reel size (mm) 180 Switching Type Tape width (mm) 8 Basic ordering unit (pcs) 3000 Taping code Marking labsolute maximum ratings (T a = 25 C),unless otherwise specified. Parameter Symbol Value Tr1:Nch Tr2:Pch Drain - Source voltage V DSS 30-30 V Continuous drain current I D *1 ±7.0 ±5.5 A Pulsed drain current I D, pulse *2 ±18 ±18 A Gate - Source voltage V GSS ±20 ±20 V Avalanche energy, single pulse E AS *4 1.8 1.1 mj Avalanche current I *4 AS 5.0-4.0 A P *1 D 2.5 total Power dissipation P *3 D 1.5 W element P D *3 1.25 Junction temperature T j 150 Range of storage temperature T stg -55 to +150 2015 ROHM Co., Ltd. All rights reserved. 1/19 20150730 - Rev.002 TR MA3 Unit
lthermal resistance Parameter Symbol Values Min. Typ. Max. Thermal resistance, junction - ambient R thja *3-83.3 - lelectrical characteristics (T a = 25 C), unless otherwise specified Parameter Symbol Type Conditions Drain - Source breakdown voltage Breakdown voltage temperature coefficient Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Gate threshold voltage temperature coefficient Static drain - source on - state resistance Values Min. Typ. Max. Tr1 V GS = 0V, I D = 1mA 30 - - V (BR)DSS Tr2 V GS = 0V, I D = -1mA -30 - - ΔV (BR)DSS Tr1 I D = 1mA, referenced to 25-21 - ΔT j Tr2 I D = -1mA, referenced to 25 - -22 - Tr1 V DS = 30V, V GS = 0V - - 1 I DSS Tr2 V DS = -30V, V GS = 0V - - -1 Tr1 V DS = 0V, V GS = ±20V - - ±100 I GSS Tr2 V DS = 0V, V GS = ±20V - - ±100 Tr1 V DS = V GS, I D = 1mA 1.0-2.5 V GS(th) Tr2 V DS = V GS, I D = -1mA -1.0 - -2.5 ΔV GS(th) Tr1 I D = 1mA, referenced to 25 - -3 - ΔT j Tr2 I D = -1mA, referenced to 25-2.9 - R DS(on) *5 Transconductance g fs *5 *1 Pw 1s, Limited only by maximum temperature allowed. *2 Pw 10μs, Duty cycle 1% *3 MOUNTED ON A CERAMIC BOARD Tr1 V GS = 10V, I D = 7.0A - 22 29 V GS = 4.5V, I D = 5.0A - 35 46 Tr2 V GS = -10V, I D = -5.5A - 37 48 V GS = -4.5V, I D = -4.0A - 55 72 Tr1 V DS = 5V, I D = 5A 2.7 - - Tr2 V DS = -5V, I D = -4A 3.3 - - *4 Tr1: L 100μH, V DD = 15V, R G = 25Ω, STARTING T ch = 25 Fig.3-1,3-2 Tr2: L 100μH, V DD = -15V, R G = 25Ω, STARTING T ch = 25 Fig.6-1,6-2 *5 Pulsed Unit Unit V mv/ μa na V mv/ mω S 2015 ROHM Co., Ltd. All rights reserved. 2/19 20150730 - Rev.002
lelectrical characteristics (T a = 25 C) <Tr1> Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V - 300 - Output capacitance C oss V DS = 15V - 50 - Reverse transfer capacitance C rss f = 1MHz - 40 - Turn - on delay time t d(on) *5 V DD 15V, V GS = 10V - 7.2 - Rise time t r *5 I D = 3.5A - 8.0 - Turn - off delay time t d(off) *5 R L = 4.3Ω - 12 - Fall time t f *5 R G = 10Ω - 5.7 - Unit pf ns <Tr2> Parameter Symbol Conditions Values Min. Typ. Max. Input capacitance C iss V GS = 0V - 480 - Output capacitance C oss V DS = -15V - 85 - Reverse transfer capacitance C rss f = 1MHz - 65 - Turn - on delay time t *5 d(on) V DD -15V, V GS = -10V - 8.0 - Rise time t *5 r I D = -2.25A - 12 - Turn - off delay time t *5 d(off) R L = 6.7Ω - 40 - Fall time t *5 f R G = 10Ω - 20 - Unit pf ns 2015 ROHM Co., Ltd. All rights reserved. 3/19 20150730 - Rev.002
lgate charge characteristics (T a = 25 C) <Tr1> Parameter Symbol Conditions Values Min. Typ. Max. V GS = 10V - 7.2 - Total gate charge Q *5 g V DD 15V - 3.7 - Gate - Source charge Q *5 gs I D = 7A V GS = 4.5V - 1.4 - Gate - Drain charge Q gd *5-1.3 - <Tr2> Parameter Symbol Conditions Values Min. Typ. Max. V GS = -10V - 10 - Total gate charge Q *5 g V DD -15V - 5.2 - Gate - Source charge Q *5 gs I D = -5.5A V GS = -4.5V - 1.6 - Gate - Drain charge Q gd *5-1.9 - Unit nc Unit nc lbody diode electrical characteristics (Source-Drain) (T a = 25 C) <Tr1> Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current Values Min. Typ. Max. I S - - 1.0 T a = 25 I *2 SP - - 18 Forward voltage V SD *5 V GS = 0V, I S = 1A - - 1.2 V <Tr2> Parameter Symbol Conditions Body diode continuous forward current Body diode pulse current Values Min. Typ. Max. I S - - -1.0 T a = 25 I *2 SP - - -18 Forward voltage V SD *5 V GS = 0V, I S = -1A - - -1.2 V Unit A Unit A 2015 ROHM Co., Ltd. All rights reserved. 4/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2015 ROHM Co., Ltd. All rights reserved. 5/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 6/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current 2015 ROHM Co., Ltd. All rights reserved. 7/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 8/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 2015 ROHM Co., Ltd. All rights reserved. 9/19 20150730 - Rev.002
lelectrical characteristic curves <Tr1> Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain Voltage 2015 ROHM Co., Ltd. All rights reserved. 10/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Single Pulse Maximum Power dissipation 2015 ROHM Co., Ltd. All rights reserved. 11/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.5 Typical Output Characteristics(I) Fig.6 Typical Output Characteristics(II) Fig.7 Breakdown Voltage vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 12/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.8 Typical Transfer Characteristics Fig.9 Gate Threshold Voltage vs. Junction Temperature Fig.10 Tranceconductance vs. Drain Current 2015 ROHM Co., Ltd. All rights reserved. 13/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.11 Drain Current Derating Curve Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 2015 ROHM Co., Ltd. All rights reserved. 14/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.14 Static Drain - Source On - State Resistance vs. Drain Current(I) Fig.15 Static Drain - Source On - State Resistance vs. Drain Current(II) Fig.16 Static Drain - Source On - State Resistance vs. Drain Current(III) 2015 ROHM Co., Ltd. All rights reserved. 15/19 20150730 - Rev.002
lelectrical characteristic curves <Tr2> Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Switching Characteristics Fig.19 Dynamic Input Characteristics Fig.20 Source Current vs. Source Drain Voltage 2015 ROHM Co., Ltd. All rights reserved. 16/19 20150730 - Rev.002
lmeasurement circuits <Tr1> Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform 2015 ROHM Co., Ltd. All rights reserved. 17/19 20150730 - Rev.002
lmeasurement circuits <Tr2> Fig.4-1 Switching Time Measurement Circuit Fig.4-2 Switching Waveforms Fig.5-1 Gate Charge Measurement Circuit Fig.5-2 Gate Charge Waveform Fig.6-1 Avalanche Measurement Circuit Fig.6-2 Avalanche Waveform lnotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 2015 ROHM Co., Ltd. All rights reserved. 18/19 20150730 - Rev.002
ldimensions 2015 ROHM Co., Ltd. All rights reserved. 19/19 20150730 - Rev.002