Thyristor/Thyristor (MAGN-A-PAK Power Modules), 32 A MAGN-A-PAK PRIMARY CHARACTERISTICS I T(A) 32 A Type Modules - thyristor, standard Package MAGN-A-PAK FEATURES High voltage Electrically isolated base plate 36 RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see /doc?9992 DESCRIPTION This SK series of MAGN-A-PAK modules uses high voltage power thyristor/thyristor in doubler circuit configuration. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges or as AC-switches when modules are connected in anti-parallel mode. These modules are intended for general purpose applications such as battery chargers, welders, motor drives, UPS, etc. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS ALUES UNITS I T(A) 7 C 32 I T(RMS) 7 I TSM 6 Hz 942 Hz 9 Hz 45 I 2 t 6 Hz 37 ka 2 s I 2 t 4 ka 2 s DRM / RRM 2 to 6 T J Range -4 to +3 C A ELECTRICAL SPECIFICATIONS OLTAGE RATINGS TYPE NUMBER S-SKT32- OLTAGE CODE RRM / DRM, MAXIMUM REPETITIE PEAK REERSE AND OFF-STATE BLOCKING OLTAGE RSM, MAXIMUM NON-REPETITIE PEAK REERSE OLTAGE 2 2 3 6 6 7 I RRM /I DRM AT 3 C MAXIMUM ma Revision: 26-Jul-28 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum average on-state current 32 A I at case temperature T(A) 8 conduction, half sine wave 7 C Maximum RMS on-state current I T(RMS) As AC switch 7 t = ms No voltage 9 Maximum peak, one-cycle on-state 942 A I non-repetitive, surge current TSM t = ms % RRM 757 Sinusoidal half wave, 792 t = ms initial T J = No voltage 45 T J maximum 37 Maximum I 2 t for fusing I 2 t ka 2 s t = ms % RRM 287 262 Maximum I 2 t for fusing I 2 t t =. ms to ms, no voltage reapplied 4 ka 2 s (6.7 % x x I Low level value or threshold voltage T(A) < I < x I T(A) ), T(TO).8 T J = T J maximum High level value of threshold voltage T(TO)2 (I > x I T(A) ), T J = T J maximum.3 Low level value on-state slope resistance High level value on-state slope resistance Maximum peak on-state or forward voltage drop r t (6.7 % x x I T(A) < I < x I T(A) ), T J = T J maximum.75 r t2 (I > x I T(A) ), T J = T J maximum.53 TM, FM, I TM = 7 A, T J = 25 C, 8 conduction, average power = T(TO) x I T(A) + r t x (I T(RMS) ) 2.4 I TM = 7 A, T J = T J maximum, 8 conduction, average power = T(TO) x I T(A) + r f x (I T(RMS) ) 2.37 Maximum holding current I H Anode supply = 2, initial I T = 3 A, T J = 25 C Maximum latching current I L Anode supply = 2, resistive load =, gate pulse:, μs, T J = 25 C m ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Typical delay time t d TJ = 25 C, gate current = A di g /dt = A/μs. Typical rise time t r d =.67 % DRM 2. μs Typical turn-off time range t q I TM = 3 A; di/dt = 5 A/μs; T J = T J maximum; R = ; d/dt = 2 /μs; gate, 2 to 3 BLOCKING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum ma RMS insulation voltage INS Hz, circuit to base, all terminals shorted, 25 C, s 36 Critical rate of rise of off-state voltage d/dt T J = T J maximum, exponential to 67 % rated DRM /μs Revision: 26-Jul-28 2 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
TRIGGERING PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Maximum peak gate power P GM t p 5 ms, T J = T J maximum. Maximum average gate power P G(A) f = Hz, T J = T J maximum 2. W Maximum peak gate current + I GM t p 5 ms, T J = T J maximum 3. A Maximum peak negative gate voltage - GT t p 5 ms, T J = T J maximum 5. Maximum required DC gate voltage to trigger GT T J = 25 C Anode supply = 2, resistive load; Ra = 3. T J = - 4 C 4. T J = T J maximum 2. Maximum required DC gate current to trigger I GT T J = 25 C Anode supply = 2, resistive load; Ra = 2 ma T J = - 4 C 3 T J = T J maximum Maximum gate voltage that will not trigger GD T J = T J maximum, rated DRM applied.25 Maximum gate current that will not trigger I GD T J = T J maximum, rated DRM applied. ma Maximum rate of rise of turned-on current di/dt T J = T J maximum, I TM = 4 A, rated DRM applied A/μs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS ALUES UNITS Junction operating and storage temperature range T J, T Stg -4 to +3 C Maximum thermal resistance, junction to case per junction R thjc DC operation.25 Typical thermal resistance, case to heatsink per module R thcs Mounting surface flat, smooth and greased.2 K/W Mounting torque ± % Approximate weight Case style MAGN-A-PAK to heatsink busbar to MAGN-A-PAK A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. 4 to 6 Nm g 7.8 oz. MAGN-A-PAK R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T J MAXIMUM RECTANGULAR CONDUCTION AT T J MAXIMUM DEICES UNITS 8 2 9 6 3 8 2 9 6 3 SKT32-.9..3.2.32.7..5.2.33 K/W Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC Revision: 26-Jul-28 3 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Maximum Allowable Case Temperature ( C) 3 2 9 8 7 6 3 6 R thjc(dc) =.25 K/W 9 2 8 2 2 3 3 Maximum Average On-State Power Loss (W) 6 6 5 4 4 3 3 2 2 DC 8 2 9 6 3 RMS limit Per Junction T J = 3 C 2 3 4 9485_ 9485_4 Fig. - Current Ratings Characteristics Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) 3 2 9 8 7 6 3 6 9 2 R thjc(dc) =.25 K/W 8 DC 2 3 4 Peak Half Sine Wave On-State Current (A) 8 7 7 6 6 5 4 4 3 Per junction At any rated load condition and with rated RRM applied following surge. Initial T J = 3 C 6 Hz.83 s Hz. s 9485_2 9485_5 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Ratings Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-State Power Loss (W) 4 4 3 3 2 2 8 2 9 6 3 RMS limit Per Junction T J = 3 C Peak Half Sine Wave On-State Current (A) 9 8 7 6 4 Per junction Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial T J = 3 C No voltage reapplied Rated RRM reapplied 2 3 4 3.. 9485_3 9485_6 Pulse Train Duration (s) Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 26-Jul-28 4 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
Instantaneous On-State Current (A) T J = 3 C T J = 25 C Per junction.5.5 2.5 3.5 4.5 9485_7 Instantaneous On-State oltage () Fig. 7 - On-State oltage Drop Characteristics Z thjc - Transient Thermal Impedance ( C/W).. Steady state value R thjc =.25 K/W (DC operation).... 9485_8 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics ORDERING INFORMATION TABLE Device code S-S KT 32-6 PbF 2 3 4 5 2 3 4 5 - product - Circuit configuration (see dimensions - link at the end of datasheet) - Current rating - oltage code x = RRM (see oltage Ratings table) - None = standard production PbF = lead (Pb)-free Note To order the optional hardware go to /doc?9572 Revision: 26-Jul-28 5 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
CIRCUIT CONFIGURATION CIRCUIT DESCRIPTION CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING ~ ~ Two SCRs doubler circuit KT + + - - K G G2 K2 Dimensions LINKS TO RELATED DOCUMENTS /doc?986 Revision: 26-Jul-28 6 Document Number: 9485 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9
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