V 93 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage Drop Low Tail Current valanche Rated Thunderbolt IGBT High Freq. Switching to 5KHz Ultra Low Leakage Current RBSO and SCSO Rated G E C ISOTOP G E C SOT-7 "UL Recognized" MXIMUM RTINGS Symbol Parameter E ll Ratings: T C = 5 C unless otherwise specified. UNIT ES Collector-Emitter Voltage GR Collector-Gate Voltage (R GE = KΩ) Volts V GE Gate Emitter Voltage ± Continuous Collector Current @ T C = 5 C 93 M Continuous Collector Current @ T C = 95 C Pulsed Collector Current @ T C = 5 C 6 36 mps I LM RBSO Clamped Inductive Load Current R G = Ω T C = 5 C 36 E S Single Pule valanche Energy 65 P D Total Power Dissipation 378 Watts T J,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.63" from Case for Sec. -55 to 5 3 C STTIC ELECTRICL CHRCTERISTICS Symbol Characteristic / Test Conditio MIN TYP MX UNIT BES Collector-Emitter Breakdown Voltage (V GE = V, =.5m) V GE (TH) Gate Threshold Voltage (E = V GE, = 5µ, T j = 5 C) 3 4 5 Volts Collector-Emitter On Voltage (, =, T j = 5 C)..5 E (ON) Collector-Emitter On Voltage (, =, T j = 5 C).8 ES Collector Cut-off Current (E = ES, V GE = V, T j = 5 C) Collector Cut-off Current (E = ES, V GE = V, T j = 5 C) µ I GES Gate-Emitter Leakage Current (V GE = ±V, E = V) ± n CUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. PT Website - http://www.advancedpower.com US 5 S.W. Columbia Street Bend, Oregon 977-35 Phone: (54) 38-8 FX: (54) 388-364 EUROPE Chemin de Magret F-337 Merignac - France Phone: (33) 5 57 9 5 5 FX: (33) 5 56 47 97 6
DYNMIC CHRCTERISTICS Symbol Characteristic Test Conditio MIN TYP MX UNIT C ies C oes C res Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Capacitance V GE = V E = 5V f = MHz Gate Charge C =.5ES = 5 9 57 4 9 3 pf nc Resistive Switching (5 C) C =.5ES = 95 9 35 47 45 49 5 5 Turn-on Switching Energy Turn-off Switching Energy Inductive Switching (5 C) LMP (Peak) =.66ES = T J = +5 C 59 43 65 65 3.6 3..4 4.8 E ts Total Switching Losses 4. 8. E ts Total Switching Losses Inductive Switching (5 C) LMP (Peak) =.66ES = 6 5 63 5 395 59 68 3.4 7. gfe Forward Traconductance E = V, = 4 S THERML ND MECHNICL CHRCTERISTICS Symbol Characteristic MIN TYP MX UNIT R ΘJC R ΘJ Junction to Case Junction to mbient.33 C/W W T Package Weight.3 9. oz gm Torque Mounting Torque (Mounting = 8-3 or 4mm Machine and Terminals = 4mm Machine) lb in N m Repetitive Rating: Pulse width limited by maximum junction temperature. IC =, R GE = 5Ω, L = µh, T j = 5 C 3 See MIL-STD-75 Method 347 PT Reserves the right to change, without notice, the specificatio and information contained herein.
C, CPCITNCE (pf), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) 6V 6V 5V 4 8 6 4 8 6 Figure, Typical Output Characteristics (T J = 5 C) Figure, Typical Output Characteristics (T J = 5 C) 3 4 5 5 5 Figure 3, Typical Output Characteristics @ Figure 4, Maximum Forward Safe Operating rea,, T C =+5 C T C =-55 C f = MHz 9V 8V 7V C ies C oes C res... 5 3 Q g, TOTL GTE CHRGE (nc) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage.35 5 µsec. Pulse Test V GE =7, 5, 3, & V T C =+5 C V GE, GTE-TO-EMITTER VOLTGE (VOLTS), COLLECTOR CURRENT (MPERES), COLLECTOR CURRENT (MPERES) 5 6 8 4 OPERTION LIMITED BY E (ST) T C =+5 C T J =+5 C SINGLE PULSE = E =3V V GE =7, 5, 3, & V E =V 9V 8V 7V E =4V µs ms ms Z θjc, THERML IMPEDNCE ( C/W)..5 D=.5...5 Note:.. t.5. t SINGLE PULSE Duty Factor D = t /t Peak T J = P DM x Z θjc + T C. -5-4 -3 - -. RECTNGULR PULSE DURTION (SECONDS) Figure 7, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration P DM
4., COLLECTOR CURRENT (MPERES) TOTL SWITCHING ENERGY LOSSES () BES, COLLECTOR-TO-EMITTER BREKDOWN E (ST), COLLECTOR-TO-EMITTER VOLTGE (NORMLIZED) STURTION VOLTGE (VOLTS) 3.5 3..5. C =.66 ES V GE = +5V R G = Ω.5. -5-5 5 5 75 5 5 5 5 75 5 5 T C, CSE TEMPERTURE ( C) Figure 8, Typical E (ST) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature. 8...9.8.5 SWITCHING ENERGY LOSSES () SWITCHING ENERGY LOSSES (), COLLECTOR CURRENT (MPERES) C =.66 ES V GE = +5V =.7-5 -5 5 5 75 5 5 6 R G, GTE RESISTNCE (OHMS) Figure, Breakdown Voltage vs Junction Temperature Figure, Typical Switching Energy Losses vs Gate Resistance C =.66 ES V GE = +5V T J = +5 C R G = Ω -5-5 5 5 75 5 5 3 5 6, COLLECTOR CURRENT (MPERES) Figure, Typical Switching Energy Losses vs. Junction Temperature Figure 3, Typical Switching Energy Losses vs Collector Current.. F, FREQUENCY (KHz) Figure 4,Typical Load Current vs Frequency 9 7 6 5 3 6. 4...5...5 For Both: Duty Cycle = 5% T J = +5 C T sink = +9 C Gate drive as specified Power dissapation = W I LOD = I RMS of fundamental
HRGE *DRIVER SME TYPE S C =.66 ES E ts = + B 9% % 9% 9% uh LMP B R G % E (ST) % DRIVER* t=us Figure 5, Switching Loss Test Circuit and Waveforms E (off) 9% V GE (on) C R L =.5 ES % V GE (off) E (on) From Gate Drive Circuitry R G Figure 6, Resistive Switching Time Test Circuit and Waveforms SOT-7 (ISOTOP ) Package Outline 3 (.) 3.7 (.48) 7.8 (.37) 8. (.3) W=4. (.6) W=4.3 (.69) H=4.8 (.87) H=4.9 (.93) (4 places).8 (.463). (.4) 8.9 (.35) 9.6 (.378) Hex Nut M4 (4 places) r = 4. (.57) ( places) 4. (.57) 4. (.65) ( places).75 (.3).85 (.33).6 (.496).8 (.54) 5. (.99) 5.4 (.) 4.9 (.587) 5. (.594) 3. (.85) 3.3 (.93) 38. (.496) 38. (4) 3.3 (.9) 3.6 (.43).95 (.77).4 (.84) * Emitter Collector * Emitter Dimeio in Millimeters and (Inches) * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. Gate