Small Signal Zener Diodes Features Silicon planar Zener diodes. Standard Zener voltage tolerance is ± 5 %. Other tolerances are available upon e3 request. These diodes are also available in DO35 case with the type designation N468...N477 and SOD23 case with the type designation MMSZ468-V...MMSZ477-V Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC Mechanical Data Case: SOT23 plastic case Weight: approx. 8.8 mg Terminals: solderable per MIL-STD-75, method 226 Packaging codes/options: GS8/ k per 3" reel (8 mm tape), k/box GS8/3 k per 7" reel (8 mm tape), 5 k/box 3 2 878 Absolute Maximum Ratings T amb, unless otherwise specified Parameter Test conditions Symbol Value Unit Zener current (see table "Characteristics") Power dissipation T A P tot 35 ) mw Note ) On FR - 5 board using recommended solder pad layout. Thermal Characteristics T amb, unless otherwise specified Parameter Test conditions Symbol Value Unit Thermal resistance junction to ambient air R thja 42 ) K/W Maximum junction temperature T j 5 C Storage temperature range T stg - 55 to + 5 C Note ) On FR - 5 board using recommended solder pad layout.
Electrical Characteristics Maximum V F =.9 V, at I F = ma Partnumber Marking code Zener voltage ) Max. reverse current Notes ) Tested with pulse test current 2) Maximum voltage change ( ). Voltage change is equal to the difference between at µa and at µa. Reverse voltage Max. voltage change at T = 5 µa I R V R Δ 2) V µa V V typ. min. max. MMBZ468-V CF 2.4 2.28 2.52 2...8 MMBZ4682-V CH 2.7 2.57 2.84...85 MMBZ4683-V CJ 3. 2.85 3.5.8..9 MMBZ4684-V CK 3.3 3.4 3.47 7.5.5.95 MMBZ4685-V CM 3.6 3.42 3.78 7.5 2..95 MMBZ4686-V CN 3.9 3.7 4. 5. 2..97 MMBZ4687-V CP 4.3 4.9 4.52 4. 2..99 MMBZ4688-V CT 4.7 4.47 4.94. 3..99 MMBZ4689-V CU 5. 4.85 5.36. 3..97 MMBZ469-V CV 5.6 5.32 5.88. 4..96 MMBZ469-V CA 6.2 5.89 6.5. 5..95 MMBZ4692-V CX 6.8 6.46 7.4. 5..9 MMBZ4693-V CY 7.5 7.3 7.88. 5.7.75 MMBZ4694-V CZ 8.2 7.79 8.6. 6.2.5 MMBZ4695-V DC 8.7 8.27 9.4. 6.6. MMBZ4696-V DD 9. 8.65 9.56. 6.9.8 MMBZ4697-V DE. 9.5.5. 7.6. MMBZ4698-V DF..5.6.5 8.4. MMBZ4699-V DH 2..4 2.6.5 9..2 MMBZ47-V DJ 3. 2.4 3.7.5 9.8.3 MMBZ47-V DK 4. 3.3 4.7.5.6.4 MMBZ472-V DM 5. 4.3 5.8.5.4.5 MMBZ473-V DN 6. 5.2 6.8.5 2..6 MMBZ474-V DP 7. 6.2 7.9.5 2.9.7 MMBZ475-V DT 8. 7. 8.9.5 3.6.8 MMBZ476-V DU 9. 8. 2..5 4.4.9 MMBZ477-V DV 2. 9. 2.. 5.2.2 MMBZ478-V DA 22. 2.9 23.. 6.7.22 MMBZ479-V DZ 24. 22.8 25.2. 8.2.24 MMBZ47-V DY 25. 23.8 26.3. 9..25 MMBZ47-V EA 27. 25.7 28.4. 2.4.27 MMBZ472-V EC 28. 26.6 29.4. 2.2.28 MMBZ473-V ED 3. 28.5 3.5. 22.8.3 MMBZ474-V EE 33. 3.4 34.7. 25..33 MMBZ475-V EF 36. 34.2 37.8. 27.3.36 MMBZ476-V EH 39. 37. 4.. 29.6.39 MMBZ477-V EJ 43. 4.9 45.2. 32.6.43 2
Typical Characteristics T amb, unless otherwise specified P tot - Total Power Dissipation (mw) 6 5 4 3 2 4 8 2 6 2 95 962 T amb - Ambient Temperature ( C) Figure. Total Power Dissipation vs. Ambient Temperature TK VZ - Temperature Coefficient of ( -4 /K) 5 5 = 5 ma - 5 2 3 4 5 95 96 Figure 4. Temperature Coefficient of vs. Z-Voltage 2 - Voltage Change (mv) 95 9598 T j 5 = 5 ma 5 2 Figure 2. Typical Change of Working Voltage under Operating Conditions at T amb 25 C D - Diode Capacitance (pf) 5 5 5 95 96 V R = 2 V T j 5 2 25 Figure 5. Diode Capacitance vs. Z-Voltage tn - Relative Voltage Change.3 tn = t / (25 C).2 TK VZ = x -4 /K 8 x -4 /K. 6 x -4 /K 4 x -4 /K 2 x -4 /K. - 2 x -4 /K.9-4 x -4 /K.8-6 6 2 8 24 95 9599 T j - Junction Temperature ( C) I F - Forward Current (ma)...2.4.6.8 95 965. T j V F - Forward Voltage (V). Figure 3. Typical Change of Working Voltage vs. Junction Temperature Figure 6. Forward Current vs. Forward Voltage 3
- Z-Current (ma) 8 6 4 2 P tot = 5 mw T amb 4 6 8 2 2 95 964 r Z - Differential Z-Resistance (Ω) = ma 5 ma ma T j 5 5 2 95 966 25 Figure 7. Z-Current vs. Z-Voltage Figure 9. Differential Z-Resistance vs. Z-Voltage 5 - Z-Current (ma) 4 3 2 P tot = 5 mw T amb 95 967 5 2 25 3 35 Figure 8. Z-Current vs. Z-Voltage Z thp - Thermal Resistance for Pulse Cond. (KW) /T =.5 /T =.2 /T =. /T =.5 /T =. /T =.2 Single Pulse - 2 R thja = 3 K/W T = T jmax - T amb i ZM = (- + ( 2 + 4r zj x T/Z thp ) /2 )/(2r zj ) - Pulse Length (ms) 95 963 Figure. Thermal Response 4
Package Dimensions in millimeters (inches): SOT23 748 5
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA. 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany 6
Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8