PM50RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RLB060 MITSUBISHI <INTELLIGENT POWER MODULES>

Similar documents
PM25RL1B120 FLAT-BASE TYPE INSULATED PACKAGE

PM100RL1B060 FLAT-BASE TYPE INSULATED PACKAGE

PM150RLB060. APPLICATION General purpose inverter, servo drives and other motor controls PM150RLB060.

PM25CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM25CLA120 MITSUBISHI <INTELLIGENT POWER MODULES>

PM50CLA120. APPLICATION General purpose inverter, servo drives and other motor controls PM50CLA120 FEATURE MITSUBISHI <INTELLIGENT POWER MODULES>

PM50RSE060 PM50RSE060. APPLICATION General purpose inverter, servo drives and other motor controls PM50RSE060 LABEL

PM75CL1A120 FLAT-BASE TYPE INSULATED PACKAGE

PM75CSD120 PM75CSD120. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75CSD120

PM75RSD060 PM75RSD060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM75RSD060

PM200CVA060 PM200CVA060. APPLICATION General purpose inverter, servo drives and other motor controls LABEL PM200CVA060

PM50RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

PM150RSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

PM50CSE120 FLAT-BASE TYPE TYPE INSULATED PACKAGE

CM150TL-12NF. APPLICATION AC drive inverters & Servo controls, etc CM150TL-12NF. IC...150A VCES...600V Insulated Type 6-elements in a pack

<Intelligent Power Modules> PM50RG1A065

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.

PS12034 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module> FLAT-BASE TYPE TYPE INSULATED TYPE TYPE

<Intelligent Power Modules> PM100CG1A065/PM100CG1AL065

QM50HA-H MEDIUM POWER SWITCHING USE

QM15HA-H MEDIUM POWER SWITCHING USE

QM300HA-2H HIGH POWER SWITCHING USE

QM30HA-H MEDIUM POWER SWITCHING USE

QM150HY-H HIGH POWER SWITCHING USE

QM75DY-H HIGH POWER SWITCHING USE

QM200HA-2H HIGH POWER SWITCHING USE

QM100HY-H HIGH POWER SWITCHING USE

QM150DY-2HK HIGH POWER SWITCHING USE

PS21963-ET/-AET/-CET/-ETW TRANSFER-MOLD TYPE INSULATED TYPE

QM100DY-2HBK HIGH POWER SWITCHING USE

QM300DY-2H HIGH POWER SWITCHING USE

PS21265-P/AP TRANSFER-MOLD TYPE TYPE INSULATED TYPE TYPE

APPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (3.5) 35.9 ±0.5 (5.5)

CM200DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM200DY-24A. IC...200A VCES V Insulated Type 2-elements in a pack

PS21661-RZ/FR PS21661-FR. APPLICATION AC100V~200V, three-phase inverter drive for small power motor control.

PS21562-SP PS21562-SP. APPLICATION AC100V~200V inverter drive for small power motor control. PS21562-SP

APPLICATION AC100V~200V three-phase inverter drive for small power motor control (1.96) 17.7 (12.78) (3.5) 35.9 ±0.5 (5.5) (13.5)

CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PS21869-P/AP PS21869-P/AP. APPLICATION AC100V~200V inverter drive for small power motor control. PS21869

TYP K "T" (4 TYP) TYP TYP UP UFO V VPI GND GND GND GND IN V CC OUT S I

U P V VPI VFO WFO UP UFO V VPC GND GND

U P V VPI VFO R (2 TYP.) WFO UP UFO V VPC GND GND

PS11033 PS11033 PS MITSUBISHI SEMICONDUCTOR <Application Specific Specific Intelligent Power Power Module>

U (2 TYP.) T WFO VUPC IN F O GND GND OUT OT OUT OT S I

Applied between V UFB -V UFS, V VFB -V VFS,V WFB -V WFS. Applied between U P,V P,W P -V PC, U N,V N,W N -V NC

PM30CSJ060 Intellimod Module Three Phase IGBT Inverter Output 30 Amperes/600 Volts

MITSUBISHI INTELLIGENT POWER MODULES PM800HSA060 FLAT-BASE TYPE INSULATED PACKAGE

V VPI V (14 TYP.) VFO R (2 TYP.) WFO UP UFO V VPC GND GND GND GND GND GND VCC

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. (2.2) 21.4 ±0.5 (10) (11) (10) (4.65) (2.9) 34.9 ± ±0.5 (1.

Y Y D T SQ PIN (10 PLS) L N TERMINAL CODE 5 : FNO 4 : VNC N 3 : CN1 2 : NC 1 : VN1 5 : FPO 4 : VPC P 3 : CP1 2 : NC 1 : VP1. FWDi IGBT C2E1.

PM50RSK060 Intellimod Module Three Phase + Brake IGBT Inverter Output 50 Amperes/600 Volts

C N V (4TYP) U (5TYP) QIF (Common Collector)

V VPC V FO V WPI W FO W UP UFO V VPI GND GND GND GND V CC OUT OUT. Dimensions Inches Millimeters L

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

PS21963-S Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. (3.556) (1) TERMINAL (0.5) (6.5) (10.5) (1.5) (1.

PS , PS A, PS C Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

PS S Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

PM25RSB120 Intellimod Module Three Phase + Brake IGBT Inverter Output 25 Amperes/1200 Volts

PS11035 Intellimod Module Application Specific IPM 20 Amperes/600 Volts

PS21353-GP. Intellimod Module Dual-In-Line Intelligent Power Module 10 Amperes/600 Volts

APPLICATION DC motor control, NC equipment, Inverters, Servo drives, contactless switches, electric furnace temperature control, light dimmers. 2 φ5.

PS11017 PS APPLICATION Acoustic noise-less 3.7kW/AC200V class 3 phase inverter and other motor control applications. PS11017

PS22053 PS APPLICATION AC400V 0.2kW~0.75kW inverter drive for small power motor control. PS22053

APPLICATION Acoustic noise-less 2.2kW/AC200V class 3 phase inverter and other motor control applications. 4-φ ±

Rating 600 ± to to Unit V V A A A W W C C N m. Symbol Characteristics Conditions Unit Min. Typ. Max.

PS11036 Intellimod Module Application Specific IPM 30 Amperes/600 Volts

PS21265-P PS21265-AP Intellimod Module Dual-In-Line Intelligent Power Module 20 Amperes/600 Volts

QM400HA-H HIGH POWER SWITCHING USE

LDIP- IPM IM (Preliminary)

Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module> PS21865 Transfer-Mold Type Insulated Type

APPLICATION Acoustic noise-less 1.5kW/AC400V Class 3 Phase inverter and other motor control applications. 4-φ ± ± 1 0.

CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts

(0~3 ) HEAT SINK SIDE (3.5) (6.5) (1.5) (0.4) (0.5) (1) (45 ) (30 ) (15 )

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

FM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE

T - 4 TYP. XØ (2 PLACES) W SQ. PIN (10 PLACES) TERMINAL CODE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO VP1 RFO AMP E2 C2E1 C1

PS21867-P. Intellimod Module Dual-In-Line Intelligent Power Module 30 Amperes/600 Volts

PM300DSA060 Intellimod Module Single Phase IGBT Inverter Output 300 Amperes/600 Volts

C L DETAIL "B" TERMINAL CODE 1 (VNC) 2 VUFB 3 VVFB 4 VWFB 5 UP 6 VP 7 WP 8 VP1 9 VNC* 10 UN 11 VN 12 WN 13 VN1 HEATSINK SIDE

APPLICATION AC100V~200V three-phase inverter drive for small power motor control. TERMINAL (3.556) (1) (0.5) (6.5) (10.5) (1.5) DUMMY PIN.

CP10TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 10 Amperes/1200 Volts

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=80 C 30.

AB (2 PLACES) 30 NC 31 P 33 V 34 W

N 36 NU 37 W 38 V 39 U 40 P 41 U 42 V

PS21A79 MAIN FUNCTION AND RATINGS 3 phase inverter with N-side open emitter structure 600V / 50A (CSTBT)

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous. A Collector current

N P HEATSINK SIDE 25 UN 26 VUFB 27 UP 30 NC 31 NC 32 NC 33 NC 34 NC 35 NC 28 U(VUFS) 29 NC

Item Symbol Condition Rat ing Unit Collector-Emitter voltage Gate-Emitter voltage. Continuous Tc=25 C 75. A Collector current.

not Recommend for New Design TM130DZ/CZ/PZ-M,-H HIGH POWER GENERAL USE

Application Note Mitsubishi Semiconductors <Dual-In-Line Package Intelligent Power Module> PS21867 Transfer-Mold Type Insulated Type

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current A. Continuous Tc=25 C 35. Tc=75 C 30.

MG200Q2YS60A(1200V/200A 2in1)

PM75DSA120 Intellimod Module Single Phase IGBT Inverter Output 75 Amperes/1200 Volts

PS21562-P. Intellimod Module Dual-In-Line Intelligent Power Module 5 Amperes/600 Volts

Description of Terminal Symbols and Terminology

Smart Pack Electric Co., Ltd <Intelligent Power Module> SPE10S60F-A TRANSFER-MOLD TYPE FULL PACK TYPE

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. A Collector current. Tc=80 C 35. 1ms IC -IC pulse.

TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q2YS60A

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. Not recommend for new design. Continuous Tc=25 C

Item Symbol Condition Rating Unit Collector-Emitter voltage Gate-Emitter voltage. 1ms. 1 device. Continuous 1ms. 1 device

Transcription:

PMRLB6 PMRLB6 FETURE a) dopting new th generation (CSTBT) chip, which performance is improved by µm fine rule process. r example, typical ce(sat)=. @Tj= C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) New small package Reduce the package size by %, thickness by % from S-DSH series. d) Current rating of brake part increased. 6% for the current rating of inverter part. φ, 6 Current-sense type inverter, 6 Current-sense regenerative brake Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P- available from upper arm devices) coustic noise-less.kw class inverter application UL Recognized Yellow Card No.E86(N) File No.E8 PPLICTION General purpose inverter, servo drives and other motor controls PCKGE LINES Dimensions in mm 6 ±. 9.. 6-6 - 66. 6. - 6- -φ. MOUNTING HOLES. 6. 9.. 9.. 98. 9-. 9.... N P 9 9 -φ. B U W -φ. Terminal code. UPC. UFO. UP. UP. PC 6. FO. P 8. P 9. WPC. WFO. WP. WP. NC. N. Br 6. UN. N 8. WN 9. May

PMRLB6 INTERNL FUNCTIONS BLOCK DIGRM Br NC WN N N UN WP WP WPC WFO P P PC FO UP UP UPC UFO.k.k.k.k Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd cc Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out Gnd Out B N W U P MXIMUM RTINGS (Tj = C, unless otherwise noted) INERTER PRT Ratings CES ±IC ±ICP PC Tj Collector-Emitter oltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature D =, CIN = TC = C TC = C TC = C (Note-) 6 ~ + W C BRKE PRT Ratings CES IC ICP PC R(DC) Tj Collector-Emitter oltage Collector Current Collector Current (Peak) Collector Dissipation Rated DC Reverse oltage rward Current Junction Temperature D =, CIN = TC = C TC = C TC = C TC = C TC = C (Note-) 6 6 6 ~ + W C CONTROL PRT Ratings D Supply oltage pplied between : UP-UPC P-PC, WP-WPC, N-NC CIN FO O put oltage Fault Output Supply oltage Fault Output Current pplied between : UP-UPC, P-PC WP-WPC, UN N WN Br-NC pplied between : UFO-UPC, FO-PC, WFO-WPC FO-NC nk current at UFO, FO, WFO, FO terminals m May

PMRLB6 TL SYSTEM Ratings CC(PR) Supply oltage Protected by D =. ~ 6., verter Part, SC Tj = + C Start CC(surge) Tstg iso Supply oltage (Surge) Storage Temperature Isolation oltage pplied between : P-N, Surge value 6Hz, nusoidal, Charged part to Base, C min. ~ + C rms THERML RESISTNCES Min. Typ. Max. Rth(j-c)Q verter (per element) (Note-).9* Rth(j-c)F Junction to case Thermal verter (per element) (Note-).6* Rth(j-c)Q Resistances Brake (Note-).* Rth(j-c)F Brake (Note-).9* C/W Rth(c-f) Contact Thermal Resistance Case to fin, (per module) Thermal grease applied (Note-).8 * If you use this value, Rth(f-a) should be measured just under the chips. (Note-) Tc (under the chip) measurement point is below. axis X Y arm 9.. UP 9..6 6.6. P WP UN N WN Br 6.. 8.9. 86.. 8...6.6.8...6 6...6.6 8.. (unit : mm).. Bottom view ELECTRICL CHRCTERISTICS (Tj = C, unless otherwise noted) INERTER PRT CE(sat) EC ton trr tc(on) toff tc(off) ICES Collector-Emitter Saturation oltage rward oltage Switching Time Collector-Emitter Cutoff Current D =, IC = Tj = C CIN = (Fig. ) Tj = C IC =, D =, CIN = (Fig. ) D =, CIN = CC =, IC = Tj = C ductive Load (Fig.,) CE = CES, CIN = (Fig. ) Tj = C Tj = C Min. Typ. Max...6............... µs m May

PMRLB6 BRKE PRT CE(sat) FM ICES Collector-Emitter Saturation oltage rward oltage Collector-Emitter Cutoff Current D =, IC = Tj = C CIN = (Fig. ) Tj = C = CE = CES, CIN = (Fig. ) (Fig. ) Tj = C Tj = C Min. Typ. Max..6..... m CONTROL PRT ID th(on) th(off) SC toff(sc) r U Ur O(H) O(L) Circuit Current put ON Threshold oltage put OFF Threshold oltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-oltage Protection Fault Output Current N-NC D =, CIN = *P-*PC pplied between : UP-UPC, P-PC, WP-WPC UN N WN Br-NC Tj C, D = (Fig.,6) verter part Brake part D = (Fig.,6) D = Detect Tj of chip Tj C D =, FO = Trip level Reset level Trip level Reset level (Note-) Minimum Fault Output Pulse tfo D = (Note-)..8 ms Width (Note-) Fault output is given only when the internal SC, & U protections schemes of either upper or lower arm device operate to protect it. Min... 6. Typ...... Max..8... m µs C m MECHNICL RTINGS ND CHRCTERISTICS Mounting torque Weight Mounting part screw : M Min. Typ. Max.... N m g RECOMMENDED CONDITIONS FOR USE CC D CIN(ON) CIN(OFF) fpwm tdead Supply oltage Control Supply oltage put ON oltage put OFF oltage PWM put Frequency rm Shoot-through Blocking Time pplied across P-N terminals pplied between : UP-UPC, P-PC WP-WPC, N-NC (Note-) pplied between : UP-UPC, P-PC, WP-WPC UN N WN Br-NC Using pplication Circuit of Fig. 8 r IPM s each input signals (Fig. ) Recommended value ±..8 9.. khz µs (Note-) With ripple satisfying the following conditions: dv/dt swing ±/µs, ariation peak to peak May

PMRLB6 PRECUTIONS FOR TESTING. Before appling any control supply voltage (D), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state. fter this, the specified ON and OFF level setting for each input signal should be done.. When performing SC tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above CES rating of the device. (These test should not be done by using a curve tracer or its equivalent.) P, (U,,W,B) P, (U,,W) CIN () IN CIN () IN U,,W, (N) D (all) Fig. CE(sat) Test U,,W,B, (N) D (all) Fig. EC, (FM) Test a) Lower rm Switching P CIN () CIN gnal input (Upper rm) gnal input (Lower rm) U,,W CS cc 9% trr Irr 9% CE b) Upper rm Switching CIN CIN () gnal input (Upper rm) gnal input (Lower rm) D (all) D (all) N P U,,W Fig. Switching time and SC test circuit N CS cc % % % % tc(on) tc(off) CIN td(on) tr td(off) tf (ton= td(on) + tr) (toff= td(off) + tf) Fig. Switching time test waveform CIN Short Circuit Current P, (U,,W,B) Constant Current CIN () IN Pulse CE SC D (all) U,,W, (N) Fig. ICES Test toff(sc) Fig. 6 SC test waveform IPM input signal CIN (Upper rm).. t IPM input signal CIN (Lower rm). t tdead tdead tdead.: put on threshold voltage th(on) typical value, : put off threshold voltage th(off) typical value Fig. Dead time measurement point example May

PMRLB6 P D D k µ.µ UP U UP UPC P P PC.k.k cc cc U + M D k µ WP W WP WPC UN.k cc cc W.µ N k µ N cc D.µ k µ N WN cc.k.µ NC Br cc B k.k : terface which is the same as the U-phase Fig. 8 pplication Example Circuit NES FOR STBLE ND SFE OPERTION ; Design the PCB pattern to minimize wiring length between opto-coupler and IPM s input terminal, and also to minimize the stray capacity between the input and output wirings of opto-coupler. Connect low impedance capacitor between the cc and GND terminal of each fast switching opto-coupler. Fast switching opto-couplers: tplh, tphl.8µs, Use High CMR type. Slow switching opto-coupler: CTR > % Use isolated control power supplies (D). lso, care should be taken to minimize the instantaneous voltage charge of the power supply. Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N terminal. Use line noise filter capacitor (ex..nf) between each input C line and ground to reject common-mode noise from C line and improve noise immunity of the system. May

PMRLB6 PERFORMNCE CURES COLLECTOR CURRENT IC () 6 PUT CHRCTERISTICS (INERTER PRT TYPICL) Tj = C D =.. COLLECTOR-EMITTER OLTGE CE () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. ) CHRCTERISTICS (INERTER PRT TYPICL) D =.. Tj = C Tj = C 6 COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. D) CHRCTERISTICS (INERTER PRT TYPICL).. IC = Tj = C Tj = C 6 8 SWITCHING TIME tc(on), tc(off) (µs) SWITCHING TIME CHRCTERISTICS (TYPICL) CC = D = Tj = C Tj = C ductive load tc(on) tc(off) tc(off) CONTROL SUPPLY OLTGE D () COLLECTOR CURRENT IC () SWITCHING TIME ton, toff (µs) SWITCHING TIME CHRCTERISTICS (TYPICL) toff ton CC = D = Tj = C Tj = C ductive load SWITCHING LOSS ESW(on), ESW(off) (mj/pulse) SWITCHING LOSS CHRCTERISTICS (TYPICL) ESW(on) ESW(off) CC = D = Tj = C Tj = C ductive load COLLECTOR CURRENT IC () COLLECTOR CURRENT IC () May

PMRLB6 COLLECTOR RECOERY CURRENT IC () DIODE FORWRD CHRCTERISTICS (INERTER PRT TYPICL) D = Tj = C Tj = C... REERSE RECOERY TIME trr (µs) DIODE REERSE RECOERY CHRCTERISTICS (TYPICL) trr Irr trr CC = D = Irr Tj = C Tj = C ductive load REERSE RECOERY CURRENT lrr () EMITTER-COLLECTOR OLTGE EC () COLLECTOR RECOERY CURRENT IC () COLLECTOR CURRENT IC () PUT CHRCTERISTICS (BRKE PRT TYPICL) Tj = C D =.. COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. ) CHRCTERISTICS (BRKE PRT TYPICL) D =.. Tj = C Tj = C COLLECTOR-EMITTER OLTGE CE () COLLECTOR CURRENT IC () COLLECTOR-EMITTER STURTION OLTGE CE (sat) () COLLECTOR-EMITTER STURTION OLTGE (S. D) CHRCTERISTICS (BRKE PRT TYPICL).. IC = Tj = C Tj = C 6 8 FORWRD CURRENT () DIODE FORWRD CHRCTERISTICS (BRKE PRT TYPICL) D = Tj = C Tj = C... CONTROL SUPPLY OLTGE D () FORWRD OLTGE FM () May

PMRLB6 ID (m) ID S. fc CHRCTERISTICS (TYPICL) D = Tj = C N-side P-side NORMLIZED TRNSIENT THERML IMPEDNCE Zth (j c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (INERTER PRT) ngle Pulse Part; Per unit base = Rth(j c)q =.9 C/W Part; Per unit base = Rth(j c)f =.6 C/W fc (khz) TIME (s) NORMLIZED TRNSIENT THERML IMPEDNCE Zth (j c) TRNSIENT THERML IMPEDNCE CHRCTERISTICS (BRKE PRT) ngle Pulse Part; Per unit base = Rth(j c)q =. C/W Part; Per unit base = Rth(j c)f =.9 C/W TIME (s) May