Dual N-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) PRODUCT SUMMARY r DS(on) (mω) @ V GS =.5V @ V GS =.5V ID (A) Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Operating Junction and Storage Temperature Range Symbol Limit Units V DS V GS ± V T A =5 C I D T A =7 C.9 A I DM 5 I S 3. A T A =5 C. P D T A =7 C.3 W T J, T stg -55 to 5 C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= sec Steady State Symbol Maximum Units R θja.5 C/W Notes a. Surface Mounted on x FR Board. b. Pulse width limited by maximum junction temperature Preliminary Publication Order Number: DS A
Electrical Characteristics Parameter Symbol Test Conditions Min Typ Max Unit Static Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 5 ua. V Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V V DS = V, V GS = V, T J = 55 C 5 ua On-State Drain Current a I D(on) V DS = 5 V, V GS =.5 V A Drain-Source On-Resistance a r DS(on) V GS =.5 V, I D = 9 A V GS =.5 V, I D = 7. A mω Forward Transconductance a g fs V DS = V, I D = 9 A 5 S Diode Forward Voltage a V SD I S =.7 A, V GS = V.7 V Dynamic b Total Gate Charge Q g V DS = V, V GS =.5 V, Gate-Source Charge Q gs 5. I D = 9 A Gate-Drain Charge Q gd. nc Turn-On Delay Time t d(on) Rise Time t r V DS = V, R L =. Ω, I D = 9 A, 7 Turn-Off Delay Time t d(off) V GEN =.5 V, R GEN = Ω 5 ns Fall Time t f 37 Input Capacitance C iss 355 Output Capacitance C oss V DS = 5 V, V GS = V, f = Mhz 5 pf Reverse Transfer Capacitance C rss 9 Notes a. Pulse test: PW <= 3us duty cycle <= %. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. Preliminary Publication Order Number: DS A
ID - Drain Current (A) Capacitance (pf) IS - Source Current (A) ID - Drain Current (A) Analog Power Typical Electrical Characteristics.5 TJ = 5 C..V.5 V.5V. 3V,3.5V,V,.5V,V.5. 3 ID-Drain Current (A) VGS - Gate-to-Source Voltage (V). On-Resistance vs. Drain Current. Transfer Characteristics..5. TJ = 5 C ID = 9A TJ = 5 C.3......... VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage. Drain-to-Source Forward Voltage V,.5V,V,3.5V,3V.5V V.V 5 35 3 5 Ciss F = MHz 5.5..5. 5 Coss Crss 5 5 VDS - Drain-to-Source Voltage (V) VDS-Drain-to-Source Voltage (V) 5. Output Characteristics. Capacitance Preliminary 3 Publication Order Number: DS A
ID Current (A) PEAK TRANSIENT POWER (W) VGS-Gate-to-Source Voltage (V) (Normalized) Analog Power Typical Electrical Characteristics VDS = V ID = 9A.5 3 5 Qg - Total Gate Charge (nc) 7. Gate Charge.5-5 -5 5 5 75 5 5 TJ -JunctionTemperature( C). Normalized On-Resistance Vs Junction Temperature us us ms ms ms SEC... SEC SEC DC Idm limit Limited by RDS... VDS Drain to Source Voltage (V) t TIME (SEC) 9. Safe Operating Area. Single Pulse Maximum Power Dissipation. D =.5...5. P(pk) R θja (t) = r(t) + R θja R θja = C /W. Single Pulse t t T J - T A = P * R θja (t) Duty Cycle, D = t / t..... t TIME (sec). Normalized Thermal Transient Junction to Ambient Preliminary Publication Order Number: DS A
Package Information Note:. All Dimension Are In mm.. Package Body Sizes Exclude Mold Flash, Protrusion Or Gate Burrs. Mold Flash, Protrusion Or Gate Burrs Shall Not Exceed. mm Per Side. 3. Package Body Sizes Determined At The Outermost Extremes Of The Plastic Body Exclusive Of Mold Flash, Tie Bar Burrs, Gate Burrs And Interlead Flash, But Including Any Mismatch Between The Top And Bottom Of The Plastic Body.. The Package Top May Be Smaller Than The Package Bottom. 5. Dimension "B" Does Not Include Dambar Protrusion. Allowable Dambar Protrusion Shall Be. mm Total In Excess Of "B" Dimension At Maximum Material Condition. The Dambar Cannot Be Located On The Lower Radius Of The Foot. Preliminary 5 Publication Order Number: DS A