5MHz 3.GHz Gallium Nitride MMIC Power Amplifier AM342WN- AM342WN-SN-R January 219 Rev 1 DESCRIPTION AMCOM s AM342WN- is an ultra-broadband GaN MMIC power amplifier. It has 23dB gain, and >42dBm output power over the.5 to 2GHz band. This MMIC is matched to 5 Ohms at the input but un-matched at the output above 2GHz. The chip is also available in a package (AM342WN-SN-R). Chip and package can give good power up to 5GHz over limited bandwidth by matching the output port externally. The chip and package are RHoS compliant. FEATURES Ultrawide bandwidth from 5MHz to 3GHz Saturated output pulse power P5dB > 42dBm Small signal gain, 23dB Input matched to 5 Ohms APPLICATIONS Software Radio, ECM Instrumentation Gain block CHIP TYPICAL PERFORMANCE (AM342WN-) * A) Bias Conditions**: V dd1 = V dd2 = +28V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 2dB 23dB 26dB Gain Ripple ± 1dB ± 2dB P1dB @.5GHz 35dBm 37dBm P1dB @ 1.GHz 34dBm 36dBm P1dB @ 2.GHz 34dBm P5dB @.5GHz 38dBm 4dBm P5dB @ 1.GHz 38dBm 4dBm P5dB @ 2.GHz 4dBm P5dB Efficiency @.5GHz 35% P5dB Efficiency @ 1.GHz 32% P5dB Efficiency @ 2.GHz 27% Noise Figure (.5 4GHz) < 18dB IP3 (.1 1.1GHz) 46dBm Input Return Loss 15dB 18dB Output Return Loss 5dB Thermal Resistance.95 C/W Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 B) Bias Conditions**: V dd1 = V dd2 = +5V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1dB ± 3.dB P1dB @.5GHz 4dBm 42dBm P1dB @ 1.GHz 37dBm 39dBm P1dB @ 2.GHz 36dBm P5dB @.5GHz 42dBm 44dBm P5dB @ 1.GHz 42dBm 44dBm P5dB @ 2.GHz 43dBm P5dB Efficiency @.5GHz 4% P5dB Efficiency @ 1.GHz 35% P5dB Efficiency @ 2.GHz 25% Noise Figure (.5 4GHz) < 19dB IP3 (.1-1.1GHz) 48dBm Input Return Loss 15dB 18dB Output Return Loss 5dB Thermal Resistance.95 C/W * Specifications subject to change without notice. ** Data obtained using test fixture shown in this datasheet. Gate biases corresponding to above currents are Vgs1=-2V, Vgs2=-2V, and may vary from lot to lot. *** Input RF power should not exceed.5w (27dBm). ABSOLUTE MAXIMUM RATING (CHIP) Parameters Symbol Rating First & second stage drain voltages Vdd1,2 6V Gate source voltage Vgs1& Vgs2-6V Drain source current Iddq1.5A Drain source current Iddq2.6A Continuous dissipation at 25ºC Pt 6W Channel temperature Tch 175 C Operating temperature Top -55 C to +85 C Storage temperature Tsto -55 C to +135 C Maximum input RF power Pin.5W Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE TYPICAL PERFORMANCE * (AM342WN-SN-R) A) Bias Conditions**: V dd1 = V dd2 = +28V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.GHz.5 2.5GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1.5dB ± 2.5dB P1dB @.5GHz 36dBm 38dBm P1dB @ 1.GHz 35dBm 37dBm P1dB @ 2.GHz 37dBm P5dB @.5GHz 38dBm 4dBm P5dB @ 1.GHz 38dBm 4dBm P5dB @ 2.GHz 4dBm P5dB Efficiency @.5GHz 34% P5dB Efficiency @ 1.GHz 32% P5dB Efficiency @ 2.GHz 3% Noise Figure (1 4GHz) < 18dB IP3 (.1 1.1GHz) 46dBm Input Return Loss 15dB 18dB Output Return Loss 1dB Thermal Resistance 1.2 C/W B) Bias Conditions**: V dd1 = V dd2 = +4V, I ddq1 = 4mA, I ddq2 = 5mA Parameters Minimum Typical ** Maximum Frequency.1 2.5GHz.5 3GHz Small Signal Gain 21dB 24dB 27dB Gain Ripple ± 1.5dB ± 2.5dB P1dB @.5GHz 38dBm 4dBm P1dB @ 1.GHz 36dBm 38dBm P1dB @ 2.GHz 38dBm P5dB @.5GHz 4dBm 42dBm P5dB @ 1.GHz 4dBm 42dBm P5dB @ 2.GHz 42dBm P5dB Efficiency @.5GHz 38% P5dB Efficiency @ 1.GHz 38% P5dB Efficiency @ 2.GHz 32% Noise Figure (1 4GHz) < 19dB IP3 (.1 1.1GHz) 48dBm Input Return Loss 15dB 17dB Output Return Loss 1dB Thermal Resistance 1.2 C/W * Specifications subject to change without notice. ** Data obtained using test fixture shown in this datasheet. Gate biases corresponding to above currents are Vgs1=-2V, Vgs2=-2V, and may vary from lot to lot. *** Input RF power should not exceed.5w (27dBm). Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 ABSOLUTE MAXIMUM RATING (PACKAGE) Parameters Symbol Rating First & second stage drain voltages Vdd1,2 5V Gate source voltage Vgs1& Vgs2-6V Drain source current Iddq1.5A Drain source current Iddq2.6A Continuous dissipation at 25ºC Pt 5W Channel temperature Tch 175 C Operating temperature Top -55 C to +85 C Storage temperature Tsto -55 C to +135 C Maximum input RF power Pin.5W Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
Gain & Return Losses (db) AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 SMALL SIGNAL DATA (Chip) Chip S-Parameters (V dd1,2=28v, 4V & 5V, ddq1=.4a, I ddq2=.5a) 4 28V / 4mA / 5mA 4 4V / 4mA / 5mA Gain & Return Losses (db) 3 2 1-1 -2 Output RL Gain Gain & Return Losses (db) 3 2 1-1 -2 Gain Output RL -3 Input RL -3 Input RL -4-4 1 2 3 4 5 6 1 2 3 4 5 6 a) V dd1,2=28v b) V dd1,2=4v 4 3 2 5V / 4mA / 5mA Gain 1-1 Output RL -2-3 Input RL -4 1 2 3 4 5 6 c) V dd1,2=5v Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 POWER DATA (Chip)* 5 P1dB (28V/4mA/5mA) 5 P5dB (28V/4mA/5mA) 4 4 3 2 1 3 2 1 P1dB 1 2 3 4 5 P5dB 1 2 3 4 5 5 P1dB (4V/4mA/5mA) 5 P5dB (4V/4mA/5mA) 4 4 3 2 1 3 2 1 P1dB 1 2 3 4 5 P5dB 1 2 3 4 5 5 P1dB (5V/4mA/5mA) 5 P5dB (5V/4mA/5mA) 4 4 3 3 2 2 1 1 P1dB 1 2 3 4 5 P5dB 1 2 3 4 5 * Chip is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2.5GHz do not operate above 2.5GHz at power saturation at > +45V to avoid failure. Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
Gain & Return Losses (db) AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 SMALL SIGNAL DATA (Packaged) Package S-Parameters (V dd1,2=28v, 4V & 5V, ddq1=.4a, I ddq2=.5a) 4 28V / 4mA / 5mA 4 4V / 4mA / 5mA 3 3 Gain & Return Losses (db) 2 1-1 -2-3 Output RL Input RL Gain Gain & Return Losses (db) 2 1-1 -2-3 Output RL Input RL Gain -4-4 1 2 3 4 5 6 1 2 3 4 5 6 a) V dd1,2=28v b) V dd1,2=4v 4 3 2 5V / 4mA / 5mA Gain 1-1 -2-3 Output RL Input RL -4 1 2 3 4 5 6 b) V dd1,2=5v Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 NOISE DATA (Package) 35 Noise at +28V/4mA/5mA 35 Noise at +4V/4mA/5mA 3 3 Noise Figure (db) 25 2 15 1 Noise Figure (db) 25 2 15 1 5 5 1 2 3 4 1 2 3 4 Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AMCOM Communications, Inc. AM342WN- AM342WN-SN-R January 219, Rev 1 POWER DATA (Packaged)* 5 P1dB (28V/4mA/5mA) 5 P5dB (28V/4mA/5mA) 4 4 3 2 1 P1dB 3 2 1 P5dB 1 2 3 4 5 1 2 3 4 5 5 P1dB (4V/4mA/5mA) 5 P5dB (4V/4mA/5mA) 4 4 3 2 1 P1dB 3 2 1 P5dB 1 2 3 4 5 1 2 3 4 5 5 P1dB (5V/4mA/5mA) 5 P5dB (5V/4mA/5mA) 4 P1dB 4 3 3 2 2 1 1 P5dB 1 2 3 4 5 1 2 3 4 5 * MMIC is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2GHz do not operate above 2GHz at saturation at > +4V to avoid failure. Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 CHIP OUTLINE (AM342WN-) Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-2V 3 Vdd1 +4V 4 Vgs2-2V 5 Vgg2 +4V 6 Vdd2 & RF out +4V 7 Vdd2 & RF out +4V 8 Vdd2 & RF out +4V 9 Vdd2 & RF out +4V 1 Vgg2 +6V 11 Vgs2-2V 12 Vds1 +4V 13 Vgs1-2V Gate biases are for reference only and may vary from lot to lot Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE OUTLINE (AM342WN-SN-R) Dimensions in inches Pin Layout Pad No. Function Bias 1 RF in 2 Vgs1-2V 3 Vdd1 +4V 4 Vgs2-2V 5 Vgg2 +4V 6 Vdd2 & RF out +4V 7 Vdd2 & RF out +4V 8 Vdd2 & RF out +4V 9 Vdd2 & RF out +4V 1 Vgg2 +4V 11 Vgs2-2V 12 Vds1 +4V 13 Vgs1-2V Gate biases are for reference only and may vary from lot to lot Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 CHIP TEST CIRCUIT for.5 3GHz Notes: 1- Use epoxy to mount PCB, and Eutectic soldering to mount chip 2- C1=1uF(Dipped Radial Tantalum),C4=1uF(Aluminum Electrolytic) C2=1pF, C3=2pF, R1=5ohms, R2=1ohms, R3=5ohms L1=2nH 3- All SMT Caps & Resistors are 42 size Important Notes: 1- The second stage positive bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (1nH is adequate). 2- Input RF power should not exceed.5w 3- Recommended current biases are 4mA and 5mA for the first stage and second stage respectively. Gate biases of -2V are for reference only. Vgs1& Vgs2 could be adjusted to vary the currents going thru the first stage (Vdd1 pin) and the second stage (Vdd2 pin) respectively. Vgg2 to be applied thru 1 Ohms should be equal to Vdd2. 4- Do not apply Vdd1& Vdd2 without proper negative voltages on Vgs1& Vgs2. Otherwise MMIC would fail due to excess heat. 5- Chip is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2.5GHz do not operate above 2.5GHz at power saturation at > +45V to avoid failure. Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879
AM342WN- AM342WN-SN-R January 219, Rev 1 PACKAGE TEST CIRCUIT for.5 3GHz Important Notes: 1- The second stage positive bias to the output port could be provided via a bias tee or suitable chokes to be soldered on the board. Inductance of choke should be large enough to have high impedance at lowest frequency of operation (1nH is adequate). 2- Input RF power should not exceed.5w 3- Recommended current biases are 4mA and 5mA for the first stage and second stage respectively. Gate biases of -2V are for reference only. Vgs1& Vgs2 could be adjusted to vary the currents going thru the first stage (Vdd1 pin) and the second stage (Vdd2 pin) respectively. Vgg2 to be applied thru 1 Ohms should be equal to Vdd2. 4- Do not apply Vdd1& Vdd2 without proper negative voltages on Vgs1& Vgs2. Otherwise MMIC would fail due to excess heat. Notes: 1- Use epoxy to mount PCB 2- C1=1uF, C2=1pF, R1=5ohms, R2=1ohms, R3=5ohms, R4=5, L1=1nH 3- All SMT Caps & Resistors are 63 size 4- Use Test Block No. D7-1131 5- MMIC is only matched up to 2GHz. For applications above 2GHz output matching improves performance up to 5GHz. Make sure power dissipation is less than 5W. Since the MMIC is not matched above 2GHz do not operate above 2GHz at saturation at > +4V to avoid failure. Email: info@amcomusa.com Tel. (31) 353-84 Fax. (31) 353-841 Website: www.amcomusa.com 41 Professional Drive, Gaithersburg, MD 2879