Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO92 package which is designed for through hole applications. NPN SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PIN 3 COLLECTOR (OUTPUT) Rating Symbol Value Unit R1 Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 0 madc Total Power Dissipation @ T A = 25 C (Note 1.) Derate above 25 C P D 350 2.81 mw mw/ C PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (surface mounted) R θja 357 C/W Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath T J, T stg DEVICE MARKING AND RESISTOR VALUES 55 to +150 T L 260 Device Marking R1 (K) R2 (K) Shipping 22 2.2 22 2.2 5000/Box 1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. C C Sec DTC1 xxx Y WW 1 2 3 CASE 29 TO92 (TO226) STYLE 1 MARKING DIAGRAM DTC1xxx YWW = Specific Device Code = (See Table) = Year = Work Week Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 Rev. 2 402 Publication Order Number: /D
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutoff Current (V CB = 50 V, I E = 0) I CBO 0 nadc CollectorEmitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc EmitterBase Cutoff Current I EBO 0.5 madc (V EB = 6.0 V, I C = 0) 0.1 0.9 1.9 4.3 2.3 1.5 0.18 CollectorBase Breakdown Voltage (I C = µa, I E = 0) V (BR)CBO 50 Vdc CollectorEmitter Breakdown Voltage (Note 2.) (I C = 2.0 ma, I B = 0) V (BR)CEO 50 Vdc ON CHARACTERISTICS (Note 2.) DC Current Gain (V CE = V, I C = 5.0 ma) h FE 35 60 80 80 160 160 3.0 8.0 15 80 60 0 140 140 350 350 5.0 15 30 200 CollectorEmitter Saturation Voltage (I C = ma, I E = 0.3 ma) / (I C = ma, I B = 0.3 ma) / (I C = ma, I B = 5 ma) (I C = ma, I B = 1 ma) // (I C = ma, I B = 1 ma) / V CE(sat) 5 Vdc Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L = kω) (V CC = 5.0 V, V B = 3.5 V, R L = kω) 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% V OL Vdc 403
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) V OH 4.9 Vdc (V CC = 5.0 V, V B = 0.5 V, R L = kω) (V CC = 5.0 V, V B = 0.05 V, R L = kω) (V CC = 5.0 V, V B = 5 V, R L = kω) Input Resistor R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 kω Resistor Ratio // / // R 1 /R 2 0.8 0.17 0.8 0.055 1 0.1 1.2 5 1.2 0.185 404
TYPICAL ELECTRICAL CHARACTERISTICS θ Figure 1. Derating Curve Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain Figure 4. Output Capacitance Figure 5. V CE(sat) versus I C Figure 6. VCE(sat) versus I C 405
TYPICAL ELECTRICAL CHARACTERISTICS Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain Figure 9. Output Capacitance Figure. Output Current versus Input Voltage Figure 11. Input Voltage versus Output Current 406
TYPICAL ELECTRICAL CHARACTERISTICS Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage Figure 16. Input Voltage versus Output Current 407
TYPICAL ELECTRICAL CHARACTERISTICS Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage Figure 21. Input Voltage versus Output Current 408
TYPICAL APPLICATIONS FOR NPN BRTs µ Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source 409