Molding Type Module IGBT, 2 in 1 Package, 12 V, 1 A FEATURES VS-GB1TP12N PRIMARY CHARACTERISTICS V CES I C at T C = 8 C V CE(on) (typical) at I C = 1 A, C Speed Package Circuit configuration INT-A-PAK 12 V 1 A 1.8 V 8 khz to 3 khz INT-A-PAK Half bridge High short circuit capability, self limiting to 6 x I C 1 μs short circuit capability V CE(on) with positive temperature coefficient Maximum junction temperature 1 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (Direct Copper Bonding) technology Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS AC inverter drives Switching mode power supplies Electronic welders DESCRIPTION Vishay s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (T C = C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 12 Gate to emitter voltage V GES ± 2 V T C = C 2 Collector current I C T C = 8 C 1 Pulsed collector current I (1) CM t p = 1 ms 2 A Diode continuous forward current I F 1 Diode maximum forward current I FM 2 Maximum power dissipation P D T J = 1 C 6 W Short circuit withstand time t SC 1 μs RMS isolation voltage V ISOL f = Hz, t = 1 min V I 2 t-value, diode I 2 t V R = V, t = 1 ms, 1 A 2 s Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (T C = C unless otherwise noted) Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 1. ma, T J = C 12 - - V GE = 1 V, I C = 1 A, T J = C - 1.8 2.2 Collector to emitter voltage V CE(on) V GE = 1 V, I C = 1 A, - 2. - V Gate to emitter threshold voltage V GE(th) V CE = V GE, I C = 4. ma, T J = C. 6.2 7. Collector cut-off current I CES V CE = V CES, V GE = V, T J = C - -. ma Gate to emitter leakage current I GES V GE = V GES, V CE = V, T J = C - - 4 na Revision: -Oct-17 1 Document Number: 94821 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
VS-GB1TP12N SWITCHING CHARACTERISTICS Turn-on delay time t d(on) - 279 - Rise time t r - 61 - Turn-off delay time t d(off) V CC = 6 V, I C = 1 A, R g =.6, - 38 - ns Fall time t f V GE = ± 1 V, T J = C - - Turn-on switching loss E on -.6 - Turn-off switching loss E off - 6.9 - mj Turn-on delay time t d(on) - 287 - Rise time t r - 63 - Turn-off delay time t d(off) V CC = 6 V, I C = 1 A, R g =.6, - 328 - ns Fall time t f V GE = ± 1 V, - 36 - Turn-on switching loss E on - 7.8 - Turn-off switching loss E off - 1. - mj Input capacitance C ies - 7.43 - Output capacitance C oes V GE = V, V CE = V, f = 1. MHz, T J = C -.2 - nf Reverse transfer capacitance C res -.34 - SC data I SC t sc 1 μs, V GE = 1 V,, V CC = 9 V, V CEM 12 V - 47 - A Internal gate resistance R gint - 2 - Stray inductance L CE - - 3 nh Module lead resistance, terminal to chip R CC +EE T C = C -.7 - m DIODE ELECTRICAL SPECIFICATIONS (T C = C unless otherwise noted) Diode forward voltage V F I F = 1 A T J = C - 1.9 2.3-2. - V Diode reverse recovery charge Q rr T J = C -.2 - - 11.88 - μc Diode peak reverse recovery current I rr I F = 1 A, V R = 6 V, T J = C - 8 - di F /dt = -2 A/μs, V GE = -1 V - 13 - A T J = C - 2.6 - Diode reverse recovery energy E rec -.6 - mj THERMAL AND MECHANICAL SPECIFICATIONS Operating junction temperature T J - - 1 Storage temperature range T STG -4-1 C Junction to case IGBT (per 1/2 module) - -.19 R thjc Diode (per 1/2 module) - -.28 K/W Case to sink R thcs Conductive grease applied -. - Mounting torque Power terminal screw: M 2. to. Mounting screw: M6 3. to. Nm Weight of module 1 g Revision: -Oct-17 2 Document Number: 94821 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
VS-GB1TP12N www.vishay.com 2 17 1 1 1 7 C 1 C V GE = 1 V. 1 1. 2 2. 3 E on, E off (mj) 3 2 1 1 V CC = 6 V R g =.6 Ω V GE = ± 1 V E off E on 7 1 1 1 17 2 V CE (V) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. I C 2 17 1 1 1 7 1 C C E on, E off (mj) 4 3 3 2 1 1 V CC = 6 V I C = 1 A V GE = ± 1 V E on E off V CE = 2 V 6 7 8 9 1 11 12 13 1 2 3 4 6 V GE (V) R g (Ω) Fig. 2 - IGBT Typical Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. R g 22 2 18 16 14 12 1 8 6 4 2 I C, Module R g =.6 Ω V GE = ± 1 V 7 1 1 1 V CE (V) Fig. - RBSOA Revision: -Oct-17 3 Document Number: 94821 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
VS-GB1TP12N 1 IGBT Z thjc (K/W) 1-1 1-2 1 1 1 1-3 1-2 1-1 t (s) Fig. 6 - IGBT Transient Thermal Impedance I F (A) 2 17 1 1 1 7 C 1 C E (mj) 1 9 8 7 6 4 3 2 1 V CC = 6 V R g =.6 Ω V GE = - 1 V E rec. 1 1. 2 2. 3 7 1 1 1 17 2 V F (V) I F (A) Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. I C 8 7 6 E (mj) 4 3 2 1 V CC = 6 V I C = 1 A V GE = - 1 V 1 2 3 4 6 R g (Ω) E rec Fig. 9 - Diode Switching Loss vs. R g Revision: -Oct-17 4 Document Number: 94821 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
VS-GB1TP12N 1 Diode Z thjc (K/W) 1-1 1-2 1 1 1 1-3 1-2 1-1 t (s) Fig. 1 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 4 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?924 Revision: -Oct-17 Document Number: 94821 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91
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