_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors
General Description uses advanced FSMOS TM technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Synchronous-rectification applications. V DS, min I D, pulse R DS(ON), max @ VGS=10 V Q g 40 V 390 A 1.8 mω 96.8 nc Schematic and Package Information Schematic Diagram Pin Assignment Top View PDFN5 6 Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 40 V Gate source voltage V GS ±20 V Continuous drain current 1) I D 130 A Pulsed drain current 2) I D, pulse 390 A Power dissipation 3) P D 140 W Single pulsed avalanche energy 4) E AS 200 mj Operation and storage temperature T stg,t j -55 to 150 Oriental Semiconductor Copyright reserved 2018 2 / 9
Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case R θjc 0.89 C/W Thermal resistance, junction-ambient 5) R θja 62 C/W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BV DSS 40 V V GS=0 V, I D=250 μa Gate threshold voltage V GS(th) 1.0 2.5 V V DS=V GS, I D=250 μa Drain-source on-state resistance R DS(ON) 1.3 1.8 mω V GS=10 V, I D=55 A Drain-source on-state resistance R DS(ON) 2.0 3.0 mω V GS=4.5 V, I D=55 A Gate-source leakage current I GSS V GS=20 V na - V GS=-20 V Drain-source leakage current I DSS 1 μa V DS=40 V, V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss 6587.4 pf Output capacitance C oss 2537.3 pf Reverse transfer capacitance C rss 178.8 pf Turn-on delay time t d(on) 26.6 ns Rise time t r 9.3 ns Turn-off delay time t d(off) 96 ns Fall time t f 39.3 ns V GS=0 V, V DS=20 V, ƒ= khz V GS=10 V, V DS=20 V, R G=2 Ω, I D=20 A Oriental Semiconductor Copyright reserved 2018 3 / 9
Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g 96.8 nc Gate-source charge Q gs 14.5 nc Gate-drain charge Q gd 18.4 nc Gate plateau voltage V plateau 2.7 V I D=20 A, V DS=20 V, V GS=10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 130 Pulsed source current I SP 390 A V GS<V th Diode forward voltage V SD 1.3 V I S=20 A, V GS=0 V Reverse recovery time t rr 205 ns Reverse recovery charge Q rr 557.4 nc Peak reverse recovery current I rrm 4.3 A I S=20 A, di/dt= A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) V DD=30 V, R G=50 Ω, L=0.3 mh, starting T j=25. 5) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25. Oriental Semiconductor Copyright reserved 2018 4 / 9
Electrical Characteristics Diagrams I D, Drain current (A) 300 200 T j = 25 10 V 5 V 4.5 V 4 V 3.5 V I D, Drain current(a) 10 1 V DS = 5 V T j = 25 V GS = 3 V 0 0 2 4 6 8 10 V DS, Drain-source voltage (V) 0.1 2 4 6 8 10 V GS, Gate-source voltage(v) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10 5 10.0 C, Capacitance (pf) 10 4 10 3 10 2 f = khz V GS = 0 V C iss C oss C rss V GS, Gate-source voltage(v) 7.5 5.0 2.5 I D = 20 A V DS = 20 V 10 1 0 10 20 30 40 V DS, Drain-source voltage (V) 0.0 0 20 40 60 80 Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BV DSS, Drain-source breakdown voltage (V) 47 46 45 44 43 42 I D = 250 μa V GS = 0 V -50 0 50 150 T j, Junction temperature ( ) R DS(ON), On-resistance(mΩ) 3.0 2.5 2.0 1.5 1.0 0.5 I D = 55 A V GS = 10 V -50 0 50 150 T j, Junction Temperature ( ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance Oriental Semiconductor Copyright reserved 2018 5 / 9
30.0m T j = 25 25.0m I S, Source current (A) 10 1 R DS(ON), On-resistance(Ω) 20.0m 15.0m 10.0m V GS =3.5 V 4 V 4.5 V 5.0m 5 V 0.4 0.8 1.2 1.6 2.0 V SD, Source-Drain voltage (V) 0.0 10 V 50 150 200 250 300 I D, Drain current(a) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance 0 10 μs I D, Drain current(a) 10 1 R DS(ON) Limited μs 1 ms 10 ms DC 0.1 0.01 0.1 1 10 V DS, Drain-source voltage(v) Figure 9, Safe operation area T C=25 Oriental Semiconductor Copyright reserved 2018 6 / 9
Test circuits and waveforms Figure 1, Gate charge test circuit & waveform Figure 2, Switching time test circuit & waveforms Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms Figure 4, Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved 2018 7 / 9
Package Information Figure1, PDFN5 6 package outline dimension Oriental Semiconductor Copyright reserved 2018 8 / 9
Ordering Information Package Units/Reel Reels/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box PDFN5 6 5000 2 00 5 50000 Product Information Product Package Pb Free RoHS Halogen Free PDFN5 6 yes yes yes Oriental Semiconductor Copyright reserved 2018 9 / 9