ZXT2M322. MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = 20V; R SAT = 64m

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MPPS Miniature Package Power Solutions 20V PNP LO SATURATION SITCHING TRANSISTOR SUMMARY V CEO = 20V; R SAT = 64m ; = -3.5A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline, this new 4 th generation low saturation transistors offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. Additionally users will also gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels Lower package height (nom 0.9mm) PCB area and device placement savings Reduced component count 2mm x 2mm MLP (single die) C FEATURES Low Equivalent On Resistance Extremely Low Saturation Voltage (-220 @-1A) B h FE characterised up to -6A = -3.5A Continuous Collector Current 2mm x 2mm MLP E APPLICATIONS DC - DC Converters (FET Drivers) Charging Circuits Power switches Motor control ORDERING INFORMATION PINOUT DEVICE REEL TAPE IDTH QUANTITY PER REEL ZXT2M322TA 7 8mm 3000 ZXT2M322TC 13 8mm 10000 DEVICE MARKING S2 2mm x 2mm Single MLP underside view 1

ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO -25 V Collector-Emitter Voltage V CEO -20 V Emitter-Base Voltage V EBO -7.5 V Peak Pulse Current (c) M -6 A Continuous Collector Current (a) -3.5 A Base Current I B -1000 ma Power Dissipation at TA=25 C (a) Power Dissipation at TA=25 C (b) Power Dissipation at TA=25 C (d) Power Dissipation at TA=25 C (e) P D 1.5 12 P D 2.45 19.6 P D 1 8 P D 3 24 Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 83 C/ Junction to Ambient (b) R θja 51 C/ Junction to Ambient (d) R θja 125 C/ Junction to Ambient (e) R θja 42 C/ NOTES (a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached. (b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t 5 secs with all exposed pads attached. (c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph. (d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only. (e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached. (f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is Rth=300 C/ giving a power rating of Ptot=420m. 2

CHARACTERISTICS 10 1 Limited DC 1s 100ms 0.1 10ms 1ms 100us Single Pulse, T amb =25 C 0.01 0.1 1 10 V CE Collector-Emitter Voltage Safe Operating Area Max Power Dissipation () 3.5 3.0 2.5 2.0 1.5 0.5 2oz Cu Note: e 1oz Cu Note: a 0.0 0 25 50 75 100 125 150 Temperature ( C) Derating Curve T amb =25 C Thermal Resistance ( C/) 80 60 D=0.5 40 D=0.2 20 Single Pulse D=0.05 D=0.1 0 100µ 100 1k Pulse idth (s) Transient Thermal Impedance Thermal Resistance ( C/) 225 200 175 150 125 100 1oz copper 75 50 25 2oz copper 0 0.1 1 10 100 BoardCuArea(sqcm) Thermal Resistance v Board Area P D Dissipation () 3.5 3.0 2.5 2.0 1.5 0.5 T amb =25 C T jmax =150 C Continuous 2oz copper 1oz copper 0.0 0.1 1 10 100 BoardCuArea(sqcm) Power Dissipation v Board Area 3

ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V (BR)CBO -25-35 V =-100 A V (BR)CEO -20-25 V =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -7.5-8.5 V I E =-100 A Collector Cut-Off Current BO -25 na V CB =-20V Emitter Cut-Off Current I EBO -25 na V EB =-6V Collector Emitter Cut-Off Current ES -25 na V CES =-16V Collector-Emitter Saturation Voltage V CE(sat) -19-170 -190-240 -225-30 -220-250 -350-300 =-0.1A, I B =-10mA* =-1A, I B =-20mA* =-1.5A, I B =-50mA* =-2.5A, I B =-150mA* =-3.5A, I B =-350mA* Base-Emitter Saturation Voltage V BE(sat) -1-75 V =-3.5A, I B =-350mA* Base-Emitter Turn-On Voltage V BE(on) -0.87-0.95 V =-3.5A, V CE =-2V* Static Forward Current Transfer Ratio h FE 300 300 150 15 475 450 230 30 =-10mA, V CE =-2V* =-0.1A, V CE =-2V* =-2A, V CE =-2V* =-6A, V CE =-2V* Transition Frequency f T 150 180 MHz =-50mA, V CE =-10V f=100mhz Output Capacitance C obo 21 30 pf V CB =-10V, f=1mhz Turn-On Time t (on) 40 ns V CC =-10V, =-1A Turn-Off Time t (off) 670 ns I B1 =I B2 =10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2% 4

CHARACTERISTICS 1 100m 10m Tamb=25 C =100 =50 =10 0.25 0.20 0.15 0.10 0.05 =50 0.00 25 C v v Normalised Gain 1.4 1.2 0.8 25 C 0.6 0.4 0.2 V 630 CE =2V 540 0.0 0 h FE v 450 360 270 180 90 Typical Gain (h FE ) V BE(SAT) =50 0.8 0.6 25 C 0.4 V BE(SAT) v V CE =2V V BE(ON) 0.8 0.6 0.4 25 C 0.2 V BE(ON) v 5

MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package) DIM CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES PACKAGE DIMENSIONS MILLIMETRES INCHES MILLIMETRES INCHES DIM MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX. A 0.80 0 0.0315 0.0393 e 0.65 REF 0.0255 REF A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.79 0.99 0.031 0.039 A3 0.15 0.25 0.0059 0.0098 E4 0.48 0.68 0.0188 0.0267 b 0.18 0.28 0.0070 0.0110 L 0.20 0.45 0.0078 0.0177 b1 0.17 0.30 0.0066 0.0118 L2 0.125 MAX. 0.005 REF D 2.00 BSC 0.0787 BSC r 0.075 BSC 0.0029 BSC D2 1.22 1.42 0.0480 0.0559 0 12 0 12 D4 0.56 0.76 0.0220 0.0299 Zetex Semiconductors plc 2007 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Balan-straße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 usa.sales@zetex.com Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Zetex Semiconductors plc Zetex Technology Park Chadderton Oldham, OL9 9LL United Kingdom Tel: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 6