N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23 2 Low on-resistance R DS(on) High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFET H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Table 1. Device summary Order code Marking Packages Packaging STR2N2VH5 STD1 SOT-23 Tape and reel July 214 DocID23799 Rev 4 1/13 This is information on a product in full production. www.st.com
Contents STR2N2VH5 Contents 1 Electrical ratings............................................ 3 2 Electrical characteristics..................................... 4 2.1 Electrical characteristics (curves)............................. 6 3 Test circuits.............................................. 8 4 Package mechanical data..................................... 9 5 Revision history........................................... 12 2/13 DocID23799 Rev 4
Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 2 V V GS Gate-source voltage ± 8 V (1) I D Drain current (continuous) at T pcb = 25 C 2.3 A I (1) D Drain current (continuous) at T pcb = 1 C 1.4 A I (1)(2) DM Drain current (pulsed) 9.2 A (1) P TOT Total dissipation at T pcb = 25 C.35 W T stg Storage temperature C - 55 to 15 T j Max. operating junction temperature C 1. This value is rated according to R thj-pcb 2. Pulse width is limited by safe operating area Table 3. Thermal data Symbol Parameter Value Unit R thj-pcb (1) Thermal resistance junction-pcb max 357 C/W 1. When mounted on 1 inch² FR-4, 2 Oz Cu, t< 1 sec. DocID23799 Rev 4 3/13 13
Electrical characteristics STR2N2VH5 2 Electrical characteristics (T C = 25 C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage Zero gate voltage drain current V GS =, I D = 1 ma 2 V V GS =, V DS = 2 V 1 µa V GS =, V DS = 2 V, T C =125 C 1 µa Gate-body leakage I GSS V current DS =, V GS = ± 8 V ± 1 na V GS(th) Gate threshold voltage V DS = V GS, I D = 25 µa.7 V R DS(on) Static drain-source on-resistance V GS = 4.5 V, I D = 2 A.25.3 Ω V GS = 2.5 V, I D = 2 A.31.4 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance - 367 - pf C oss Output capacitance V GS =, V DS = 16 V, f = 1 MHz - 92 - pf C rss Reverse transfer capacitance - 16 - pf Q g Total gate charge V DD = 16 V, I D = 2 A, - 4.6 - nc Q gs Gate-source charge V GS = 4.5 V -.9 - nc Q gd Gate-drain charge (see Figure 14) - 1 - nc Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Voltage delay time - 4.8 - ns t V DD = 16 V, I D = 2 A, r (V) Voltage rise time - 14.4 - ns R G = 4.7 Ω, V GS = 4.5 V t d (off) Current fall time (see Figure 15 and Figure 18) - 17 - ns t f Crossing time - 4 - ns 4/13 DocID23799 Rev 4
Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 2.3 A I (1) SDM Source-drain current (pulsed) - 9.2 A V (2) SD Forward on voltage V GS =, I SD = 2 A - 1.1 V t rr Reverse recovery time I SD = 2 A, di/dt = 1 A/µs - 1 ns Q rr Reverse recovery charge V DD = 16 V, T j = 15 C - 24 nc I RRM Reverse recovery current (see Figure 18) - 4.8 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 3 µs, duty cycle 1.5% DocID23799 Rev 4 5/13 13
Electrical characteristics STR2N2VH5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID (A) AM18126v1 K δ=.5 AM18127v1.2 1 1 Operation in this area is Limited by max RDS(on) 1µs 1ms 1ms 1-1 1-2.1.5.2.1 pcb Tj=15 C Tpcb=25 C Single pulse.1.1 1 1 VDS(V) Figure 4. Output characteristics Single pulse 1-3 -4 1-5 1 1-2 1-1 1 tp(s) 1-3 Figure 5. Transfer characteristics ID (A) VGS=2.5, 3.5, 4.5, 5.5, 6.5 V AM18128v1 ID (A) VDS=4V AM18129v1 2 2 16 1.5V 16 12 12 8 8 4.5V 1 2 3 4 VDS(V) Figure 6. Gate charge vs gate-source voltage 4.2.4.6.8 1 1.2 VGS(V) Figure 7. Static drain-source on-resistance VGS (V) 6 VDD=1V ID=2A AM1813v1 RDS(on) (mω) 26 25.6 VGS=4.5V AM18132v1 4 25.2 24.8 2 24.4 2 4 6 Qg(nC) 24 1 1.5 2 2.5 3 3.5 ID(A) 6/13 DocID23799 Rev 4
Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature C (pf) AM18133v1 Ciss VGS(th) (norm) 1.2 1 ID=25µA AM18134v1 1 Coss.8.6.4 Crss 1 4 8 12 16 VDS(V) Figure 1. Normalized on-resistance vs temperature.2-55 -3-5 2 45 7 95 12 TJ( C) Figure 11. Normalized V (BR)DSS vs temperature RDS(on) (norm) 1.6 ID=2A VGS=1V AM18135v1 V(BR)DSS (norm) 1.1 ID=1mA AM18136v1 1.4 1.2 1.5 1.8 1.6.4.95.2-55 -3-5 2 45 7 95 12 TJ( C).9-55 -3-5 2 45 7 95 12 TJ( C) Figure 12. Source-drain diode forward characteristics VSD (V).9 TJ=-55 C AM18137v1.8 TJ=25 C.7 TJ=15 C.6.5.5.9 1.3 1.7 2.1 ISD(A) DocID23799 Rev 4 7/13 13
Test circuits STR2N2VH5 3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD VGS VD RG RL D.U.T. 22 μf 3.3 μf VDD Vi=2V=VGMAX 22 μf 12V IG=CONST 2.7kΩ 47kΩ 1Ω 1nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM1468v1 AM1469v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=1μH 3.3 1 μf μf VDD VD ID L 22 μf 3.3 μf VDD G RG S Vi D.U.T. AM147v1 Pw AM1471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 9% 1% VDS 1% 9% VDD VDD VGS 9% AM1472v1 1% AM1473v1 8/13 DocID23799 Rev 4
Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID23799 Rev 4 9/13 13
Package mechanical data STR2N2VH5 Figure 19. SOT-23 mechanical drawing 5339_I Table 8. SOT-23 mechanical data Dim. mm Min. Typ. Max. A.89 1.4 A1.1 B.3.51 C.85.18 D 2.75 3.4 e.85 1.5 e1 1.7 2.1 E 1.2 1.75 H 2.1 3. L.6 S.35.65 L1.25.55 a 8 1/13 DocID23799 Rev 4
Package mechanical data Figure 2. SOT-23 recommended footprint (a).48.95 2.89.97.99 SOT-23 footp_i a. Dimensions are in mm. DocID23799 Rev 4 11/13 13
Revision history STR2N2VH5 5 Revision history Table 9. Document revision history Date Revision Changes 19-Oct-212 1 First release. 14-Jan-213 2 Modified: R DS(on) values 19-Mar-214 3 25-Jul-214 4 The part number STT5N2VH5 has been moved to a separate datasheet Modified: the entire typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Minor text changes Modified: title, description and features Updated: Figure 12 Minor text changes 12/13 DocID23799 Rev 4
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