FDPF8N20FT-G N-Channel UniFET TM FRFET MOSFET 200 V, 8 A, 40 m Features R DS(on) = 29 mω (Typ.) @ V GS = 0 V, I D = 9 A Low Gate Charge (Typ. 20 nc) Low C rss (Typ. 24 pf) 00% Avalanche Tested Improve dv/dt Capability RoHS Compliant Applications LCD/LED TV Consumer Appliances Lighting Uninterruptible Power Supply AC-DC Power Supply G DS TO-220F Description UniFET TM MOSFET is ON Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode s reverse recovery performance of UniFET FRFET has been enhanced by lifetime control. Its t rr is less than 00nsec and the reverse dv/dt immunity is 5V/ns while normal planar MOSFETs have over 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. G D MOSFET Maximum Ratings T C = 25 o C unless otherwise noted Symbol Parameter FDPF8N20FT-G Unit V DSS Drain to Source Voltage 200 V V GSS Gate to Source Voltage ±30 V I D Drain Current Thermal Characteristics -Continuous (T C = 25 o C) 8* -Continuous (T C = 00 o C) 0.8* I DM Drain Current - Pulsed (Note ) 72* A E AS Single Pulsed Avalanche Energy (Note 2) 324 mj I AR Avalanche Current (Note ) 8 A E AR Repetitive Avalanche Energy (Note ) 0 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P D Power Dissipation S (T C = 25 o C) 35 W - Derate above 25 o C 0.27 W/ o C T J, T STG Operating and Storage Temperature Range -55 to +50 o C T L Maximum Lead Temperature for Soldering Purpose, /8 from Case for 5 Seconds 300 o C *Drain current limited by maximum junction temperature Symbol Parameter FDPF8N20FT-G Unit R θjc Thermal Resistance, Junction to Case, Max. 3.6 R θcs Thermal Resistance, Case to Sink, Typ. 0.5 R θja Thermal Resistance, Junction to Ambient, Max. 62.5 A o C/W 202 Semiconductor Components Industries, LLC. September-207, Rev. 3 Publication Order Number: FDPF8N20FT-G/D
Package Marking and Ordering Information T C = 25 o C unless otherwise noted Device Marking Device Package Eco Status Reel Size Tape Width Quantity FDPF8N20FT FDPF8N20F-G TO-220F Green/RoHS - - 50 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain to Source Breakdown Voltage I D = 250µA, V GS = 0V, T J = 25 o C 200 - - V BV DSS T J I DSS On Characteristics Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Dynamic Characteristics Switching Characteristics I D = 250µA, Referenced to 25 o C - 0.2 - V/ o C V DS = 200V, V GS = 0V - - 0 V DS = 60V, T C = 25 o C - - 00 I GSS Gate to Body Leakage Current V GS = ±30V, V DS = 0V - - ±00 na V GS(th) Gate Threshold Voltage V GS = V DS, I D = 250µA 3.0-5.0 V R DS(on) Static Drain to Source On Resistance V GS = 0V, I D = 9A - 0.2 0.4 Ω g FS Forward Transconductance V DS = 20V, I D = 9A (Note 4) - 3.6 - S C iss Input Capacitance - 885 80 pf V DS = 25V, V GS = 0V C oss Output Capacitance - 200 270 pf f = MHz C rss Reverse Transfer Capacitance - 24 35 pf Q g(tot) Total Gate Charge at 0V - 20 26 nc Q gs Gate to Source Gate Charge V DS = 60V, I D = 8A - 5 - nc Q gd Gate to Drain Miller Charge V GS = 0V (Note 4, 5) - 9 - nc t d(on) Turn-On Delay Time - 6 40 ns t r Turn-On Rise Time V DD = 00V, I D = 8A - 50 0 ns t d(off) Turn-Off Delay Time R G = 25Ω - 50 0 ns t f Turn-Off Fall Time (Note 4, 5) - 40 90 ns µa Drain-Source Diode Characteristics I S Maximum Continuous Drain to Source Diode Forward Current - - 8 A I SM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 8A - -.5 V t rr Reverse Recovery Time V GS = 0V, I SD = 8A - 80 - ns Q rr Reverse Recovery Charge di F /dt = 00A/µs (Note 4) - 240 - nc Notes:. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2mH, I AS = 8A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. I SD 8A, di/dt 200A/µs, V DD BV DSS, Starting T J = 25 C 4. Pulse Test: Pulse width 300µs, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2
Typical Performance Characteristics ID,Drain Current[A] RDS(ON) [Ω], Drain-Source On-Resistance Figure. On-Region Characteristics 50 0 V GS = 0.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V. 250µs Pulse Test 2. T C = 25 o C 0. 0 V DS,Drain-Source Voltage[V] Figure 2. Transfer Characteristics 0 50 o C. V DS = 20V 2. 250µs Pulse Test 4 5 6 7 V GS,Gate-Source Voltage[V] Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature 0.25 0.20 0.5 V GS = 0V V GS = 20V *Note: T J = 25 o C 0.0 0 0 20 30 40 50 I D, Drain Current [A] ID,Drain Current[A] IS, Reverse Drain Current [A] 30 00 0 50 o C 25 o C 25 o C. V GS = 0V 2. 250µs Pulse Test 0.0 0.4 0.8.2.6 2.0 V SD, Body Diode Forward Voltage [V] Capacitances [pf] Figure 5. Capacitance Characteristics 2000 500 000 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd C iss C oss *Note:. V GS = 0V 2. f = MHz VGS, Gate-Source Voltage [V] Figure 6. Gate Charge Characteristics 0 8 6 4 2 V DS = 40V V DS = 00V V DS = 60V C rss 0 0. 0 V DS, Drain-Source Voltage [V] *Note: I D = 8A 0 30 0 6 2 8 24 Q g, Total Gate Charge [nc] 3
Typical Performance Characteristics (Continued) BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature ID, Drain Current [A].2..0 0.9. V GS = 0V 2. I D = 250µA 0.8-00 -50 0 50 00 50 200 T J, Junction Temperature [ o C] Figure 9. Maximum Drain Current vs. Case Temperature 20 6 2 8 4 Figure 8. Maximum Safe Operating Area - FDP8N20F ID, Drain Current [A] 00 0 0. Operation in This Area is Limited by R DS(on). T C = 25 o C 2. T J = 50 o C 3. Single Pulse 0.0 0 00 V DS, Drain-Source Voltage [V] 20µs 00µs ms 0ms DC 600 0 25 50 75 00 25 50 T C, Case Temperature [ o C] Figure 0. Transient Thermal Response Curve - FDP8N20F Thermal Response [Z θjc ] 2 0. 0.0 0.5 0.2 0. 0.05 0.02 0.0 Single pulse P DM t t 2. Z θjc (t) = 3.0 o C/W Max. 2. Duty Factor, D= t /t 2 3. T JM - T C = P DM * Z θjc (t) 0-5 0-4 0-3 0-2 0-0 0 2 Rectangular Pulse Duration [sec] 4
Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5
V GS ( Driver ) Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + I SD V DS _ L Driver R G Same Type as DUT V GS dv/dt controlled by RG I SD controlled by pulse period Gate Pulse Width D = -------------------------- Gate Pulse Period V DD 0V I FM, Body Diode Forward Current I SD ( DUT ) di/dt I RM Body Diode Reverse Current V DS ( DUT ) Body Diode Recovery dv/dt V SD V DD Body Diode Forward Voltage Drop 6
Mechanical Dimensions TO-220M03 Dimensions in Millimeters 7
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