We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping MMBTA13LT1 1M 3000/Tape & Reel MMBTA14LT1 1N 3000/Tape & Reel MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc Collector Base Voltage V CBO 30 Vdc SOT 23 Emitter Base Voltage V EBO Vdc Collector Current Continuous 300 madc COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, (1) T A = 25 C P D 225 mw Derate above 25 C 1.8 mw/ C Thermal Resistance, Junction to Ambient R θja 556 C/W Total Device Dissipation P D 300 mw Alumina Substrate, (2) T A = 25 C 2.4 mw/ C Derate above 25 C Thermal Resistance, Junction to Ambient R θja 417 C/W Junction and Storage Temperature, T stg 55 to +1 C 1 BASE 2 EMITTER DEVICE MARKING MMBTA13LT1 = 1M; MMBTA14LT1 = 1N; ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit Collector Emitter Breakdown Voltage V (BR)CEO 30 Vdc ( = 0 µadc, V BE = 0) Collector Cutoff Current BO 0 nadc ( V CB = 30Vdc, I E = 0) Emitter Cutoff Current I EBO 0 nadc ( V EB = Vdc, = 0) 1. FR 5 = x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain h FE ( = madc, V CE = 5.0 Vdc) MMBTA13 5,000 MMBTA14,000 ( = 0mAdc, V CE = 5.0Vdc) MMBTA13,000 Collector Emitter Saturation Voltage ( = 0 madc, I B = 0.1 madc) Base Emitter On Voltage ( = 0mAdc, V CE = 5.0Vdc) SMALL SIGNAL CHARACTERISTICS MMBTA14,000 VCE(sat) 1.5 Vdc V BE 2.0 Vdc Current Gain Bandwidth Product(4) (V CE = 5.0 Vdc, = madc, f = 0 MHz) f T 125 MHz 3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%. 4. f T = h f e *f test. R S in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS (V CE = 5.0 Vdc, T A = 25 C) e n, NOISE VOLTAGE (nv) 0 0 0 BANDWIDTH = Hz R 0 S ~ µa 0µA =ma, NOISE CURRENT (pa) I n 2.0 0.7 0.5 0.3 0.1 0.07 0.05 BANDWIDTH = Hz =ma 0µA µa V T, TOTAL WIDEBAND NOISE VOLTAGE (nv) 5.0 0 0 0 k 2.0k 5.0k k k k 0k 0 0 70 30 f, FREQUENCY (Hz) Figure 2. Noise Voltage BANDWIDTH = Hz TO 15.7 khz = µa 0 µa ma 2.0 5.0 0 0 0 k NF, NOISE FIGURE (db) 0.03 0.02 0 0 0 k 2.0k 5.0k k k k 0k f, FREQUENCY (Hz) Figure 3. Noise Current 0 BANDWIDTH = Hz TO 15.7 khz 0 0 µa 0 µa = ma 5.0 2.0 5.0 0 0 0 k R S, SOURCE RESISTANCE (kω) Figure 4. Total Wideband Noise Voltage R S, SOURCE RESISTANCE (kω) Figure 5. Wideband Noise Figure
SMALL SIGNAL CHARACTERISTICS C, CAPACITANCE (pf) =25 C 7.0 C ibo 5.0 C obo 3.0 2.0 0.04 0.1 0.4 1.2 4.0 40 h fe, SMALL SIGNAL CURRENT GAIN 4.0 V CE = 5.0 V f = 0 MHz 2.0 = 25 C 0.8 0.6 0.4 0.5 2.0 5.0 0 0 0 V R, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance, COLLECTOR CURRENT (ma) Figure 7. High Frequency Current Gain h FE, DC CURRENT GAIN 0k 0k 70k k 30k k k 7.0k 5.0k 3.0k = 125 C 25 C 55 C V CE = 5.0V 2.0k 5.0 7.0 30 70 0 0 300 0, COLLECTOR CURRENT (ma) Figure 8. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 3.0 = 25 C 2.5 = ma ma 2mA 0mA 2.0 1.5 0.5 0.1 0.5 2.0 5.0 0 0 0 00 I B, BASE CURRENT (µa) Figure 9. Collector Saturation Region V, VOLTAGE ( VOLTS ) 1.6 = 25 C 1.4 V BE(sat) @ /I B = 00 1.2 V BE(on) @ V CE = 5.0 V 0.8 V CE(sat) @ /I B = 00 0.6 5.0 7.0 30 70 0 0 300 0 C, COLLECTOR CURRENT (ma) Figure 17. ON Voltages R θv, TEMPERATURE COEFFICIENTS (mv/ C) *APPLIES FOR /I B <h FE /3.0 +25 C TO +125 C 2.0 * R θvc for V CE(sat) 55 C TO +25 C 3.0 +25 C TO +125 C 4.0 θ VB for V BE 5.0 55 C TO +25 C 6.0 5.0 7.0 30 70 0 0 300 0, COLLECTOR CURRENT (ma) Figure 18. Temperature Coefficients
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) 0.7 0.5 D = 0.5 0.3 0.1 0.05 SINGLE PULSE 0.1 0.07 SINGLE PULSE 0.05 0.03 Z θjc(t) = r(t) R θjc (pk) T C = P (pk) Z θjc(t) 0.02 Z θja(t) = r(t) R θja (pk) T A = P (pk) Z θja(t) 0.01 0.1 0.5 2.0 5.0 0 0 0 k 2.0k 5.0k k t, TIME (ms) Figure 12. Thermal Response, COLLECTOR CURRENT (ma) k 700 ms 0 300 T A = 25 C T C = 25 C 0µs 0 s 0 70 30 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 0.4 0.6 2.0 4.0 6.0 40 V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 13.Active Region Safe Operating Area t 1 FIGURE A P P t P 1/f DUTY CYCLE =t 1 f = t 1 t P PEAK PULSE POWER = P P Design Note: Use of Transient Thermal Resistance Data P P
.063(1.60).047(1.) SOT-23.122(3.).6(2.70).006(0.15)MIN..1(2.80).083(2.).080(2.04).070(1.78).008(0.).003(0.08).004(0.)MAX..0(0.).012(0.30).055(1.40).035(0.89) Dimensions in inches and (millimeters)
Ordering Information: Device PN Packing Part Number G (1) WS Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.