URB62CTG, NRVUB62CTTG SWITCHODE Power Rectifier D 2 PK Power Surface ount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. eatures Package Designed for Power Surface ount pplications Ultrafast 35 Nanosecond Recovery Times 75 C Operating Junction Temperature Epoxy eets U 9 V @.25 in High Temperature Glass Passivated Junction ow eakage Specified @ 5 C Case Temperature Short Heat Sink Tab anufactured Not Sheared! Similar in Size to Industrial Standard TO 22 Package NRVUB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb ree and are RoHS Compliant* echanical Characteristics: Case: Epoxy, olded, Epoxy eets U 9, V Weight:.7Grams (pproximately) inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead and ounting Surface Temperature for Soldering Purposes: 26 C ax. for Seconds Device eets S Requirements ESD Ratings: achine odel = C (> V) Human Body odel = 3B (> 8 V) UTRST RECTIIER 6 PERES, 2 VOTS 3 Y WW U62 G K D 2 PK CSE 8B STYE 3 RKING DIGR Y WW U62G K = ssembly ocation = Year = Work Week = Device Code = Pb ree Package = Diode Polarity ORDERING INORTION Device Package Shipping URB62CTG URB62CTTG NRVUB62CTTG D 2 PK D 2 PK D 2 PK 5 Units / Rail 8 / Tape & Reel 8 / Tape & Reel *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D. or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Semiconductor Components Industries, C, 22 November, 22 Rev. 7 Publication Order Number: URB62CT/D
URB62CTG, NRVUB62CTTG XIU RTINGS (Per eg) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RR V RW V R 2 V verage Rectified orward Current (Rated V R, T C = 5 C) Total Device Peak Repetitive orward Current (Rated V R, Square Wave, 2 khz, T C = 5 C) Non Repetitive Peak Surge Current (Surge pplied at Rated oad Conditions Halfwave, Single Phase, 6 Hz) I (V) 8. 6 I 6 I S Operating Junction and Storage Temperature Range T J, T stg 65 to +75 C Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THER CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit aximum Thermal Resistance, Junction to Case R JC 3 C/W aximum Thermal Resistance, Junction to mbient R J 5 C/W Temperature for Soldering Purposes: /8 from Case for 5 Seconds T 26 C EECTRIC CHRCTERISTICS (Per eg) Characteristic Symbol ax Unit aximum Instantaneous orward Voltage (Note ) (i = 8, T C = 5 C) (i = 8, T C = 25 C) v.895.975 V aximum Instantaneous Reverse Current (Note ) (Rated DC Voltage, T C = 5 C) (Rated DC Voltage, T C = 25 C) aximum Reverse Recovery Time (I =, di/dt = 5 / s) (I =.5, i R =, I REC =.25 ). Pulse Test: Pulse Width = 3 s, Duty Cycle 2.% i R 25 5 t rr 35 25 ns, INSTNTNEOUS ORWRD CURRENT (PS) i 5 2 5. 2...7.3 T J = 75 C C 25 C..2..6.8.2 v, INSTNTNEOUS VOTGE (V) I R, REVERSE CURRENT ( ) μ K. K 2.2.. T J = 75 C C 25 C 2 6 8 2 6 8 V R, REVERSE VOTGE (V) 2 igure. Typical orward Voltage, Per eg igure 2. Typical Reverse Current, Per eg* 2
URB62CTG, NRVUB62CTTG I (V), VERGE POWER DISSIPTION (WTTS 9. 8. 7. 6. 5.. 3. 2.. DC SQURE WVE 5 6 7 T C, CSE TEPERTURE ( C) RTED V R PPIED R JC = 3 C/W 8 P(V), VERGE POWER DISSIPTION (WTTS) 9. 8. 7. 6. 5.. 3. 2.. T J = 75 C SQURE WVE DC 2 3 5 6 7 8 I (V), VERGE ORWRD CURRENT (PS) 9 igure 3. Current Derating Case, Per eg igure. Power Dissipation, Per eg r(t), TRNSIENT THER RESISTNCE (NORIZED.5.2..5.2 D =.5..5....2.5 SINGE PUSE..2.5 2 5 t, TIE (ms) P (pk) Z JC(t) = r(t) R JC t t 2 D curves apply for power pulse train shown read time at T Duty Cycle, D = t /t 2 T J(pk) - T C = P (pk) Z JC(t) 2 5 2 5 igure 5. Thermal Response K C, CPCITNCE (p) 3 3 T J = 25 C V R, REVERSE VOTGE (V) igure 6. Typical Capacitance, Per eg 3
URB62CTG, NRVUB62CTTG PCKGE DIENSIONS D 2 PK 3 CSE 8B ISSUE K T SETING PNE B 2 3 G S D 3 P.3 (.5) T B K C H E V W W J NOTES:. DIENSIONING ND TOERNCING PER NSI Y.5, 982. 2. CONTROING DIENSION: INCH. 3. 8B THRU 8B 3 OBSOETE, NEW STNDRD 8B. INCHES IIETERS DI IN X IN X.3.38 8.6 9.65 B.38.5 9.65.29 C.6.9.6.83 D.2.35.5.89 E.5.55...3.35 7.87 8.89 G. BSC 2.5 BSC H.8. 2.3 2.79 J.8.25.6.6 K.9. 2.29 2.79.52.72.32.83.28.32 7. 8.3 N.97 RE 5. RE P.79 RE 2. RE R.39 RE.99 RE S.575.625.6 5.88 V.5.55.. VRIBE CONIGURTION ZONE R N U P STYE 3: PIN. NODE 2. CTHODE 3. NODE. CTHODE VIEW W W VIEW W W VIEW W W 2 3 SODERING OOTPRINT*.9 8.38 6.55 2X 3.5 2X.6 5.8 PITCH DIENSIONS: IIETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D.
URB62CTG, NRVUB62CTTG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INORTION ITERTURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 US Phone: 33 675 275 or 8 3 386 Toll ree US/Canada ax: 33 675 276 or 8 3 3867 Toll ree US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8 282 9855 Toll ree US/Canada Europe, iddle East and frica Technical Support: Phone: 2 33 79 29 Japan Customer ocus Center Phone: 8 3 587 5 5 ON Semiconductor Website: www.onsemi.com Order iterature: http://www.onsemi.com/orderlit or additional information, please contact your local Sales Representative URB62CT/D