T9G Phase Control Thyristor

Similar documents
T9S0 Phase Control Thyristor

T Phase Control Thyristor

TCS4 340H Phase Control Thyristor

R9S0 30XX GENERAL PURPOSE RECTIFIER DIODE

LDR3 Outline Dimensions. Dimension Inches Millimeters

Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)

PA POW-R-BLOK TM AC Switch SCR Isolated Module 1550 Amps RMS, Up to 1800 Volts

POW-R-BLOK TM Dual SCR Isolated Module 500 Amperes / Up to 1600 Volts. LD43 50 Dual SCR POW-R-BLOK TM Module 500 Amperes / Volts

Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)

PD POW-R-BLOK TM Dual SCR Isolated Module 700 Amperes / Up to 1800 Volts

BTA40 and BTA/BTB41 Series

POW-R-BLOK TM Dual SCR Isolated Module 250 Amperes / Up to 1600 Volts. ND43 25 Dual SCR Isolated POW-R-BLOK TM Module 250 Amperes / Up to 1600 Volts

POW-R-BLOK TM Dual SCR Isolated Module 150 Amperes / Up to 1600 Volts. CD63 15A Dual SCR Isolated POW-R-BLOK TM Module 150 Amperes / Up to 1600 Volts

POW-R-BLOK TM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts CD62 15B, CD67 15B

Value Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)

MAC12HCDG, MAC12HCMG, MAC12HCNG

ST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)

MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description

MAC16DG, MAC16MG, MAC16NG

SCR/GTO/Diode POW-R-BLOK Modules Ratings and Characteristics. 1.3 The Device Data Sheet

MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.

MCR25DG, MCR25MG, MCR25NG

ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)

C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description

MAC8DG, MAC8MG, MAC8NG

TN1605H-6G. High temperature 16 A SCRs. Description. Features. Applications

R L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

ST180S SERIES 200A. Stud Version PHASE CONTROL THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics

MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description

BTA40 and BTA/BTB41 Series

2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description

MCR218-2G, MCR218-4G, MCR218-6G

MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description

BTA40 and BTA/BTB41 Series

MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description

TM8050H-8W. 80 A high temperature Thyristor (SCR) Applications

MAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description

50RIA SERIES 50 A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2401 rev. A 07/00. Case Style TO-208AC (TO-65)

MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description

Phase Control Thyristor RMS SCRs, 25 A, 35 A

BTB08-600BW3G, BTB08-800BW3G

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS

MCR12DG, MCR12MG, MCR12NG

T2550H-600T 25A TRIACS MAIN FEATURES:

Teccor brand Thyristors Silicon Controlled Rectifiers

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS

Teccor brand Thyristors 40 Amp Low T q SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV)

Phase Control Thyristors (Hockey PUK Version), 1745 A

C106 Series. Sensitive Gate Silicon Controlled Rectifiers

MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description

Phase Control Thyristors (Hockey-PUK Version), 2310 A

Phase Control Thyristors (Hockey PUK Version), 1350 A

Silicon Bidirectional Thyristors

MAC12D, MAC12M, MAC12N

SCT25N60FD 600V, 25A STANDARD TRIAC. Features. Applications. Ordering Information. Absolute Maximum Ratings (Limiting Values)

Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C

Phase Control Thyristors (Stud Version), 110 A

MCR8SDG, MCR8SMG, MCR8SNG

POW-R-BLOK TM Dual Diode Isolated Module 600 Amperes / Up to 2400 Volts. LD41 60 Dual Diode POW-R-BLOK TM Module 600 Amperes / Volts

SCT04N60FD 600V, 4A STANDARD TRIAC. Features. Applications. Ordering Information. Absolute Maximum Ratings (Limiting Values)

T835T-8I. 8 A Snubberless Triac

China - Germany - Korea - Singapore - United States - smc-diodes.com

TN5015H-6G. High temperature 50 A SCRs. Description. Features. Applications

TN B. Standard 15 A SCRs. Description. Features. Application. Benefits

TN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications

TFI V DRM V DSM V RRM V RSM

TK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18

C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description

Phase Control Thyristors (Stud Version), 300 A

Phase Control Thyristors (Stud Version), 330 A

Thyristors 4 Amp High Temperature Sensitive SCRs. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 130 C 4 A I T(AV)

BTA A Snubberless Triacs. Features. Description. I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma

QJxx16xHx Series. Thyristors 16 Amp High Temperature Alternistor Triacs. RoHS. Description

BTA30H-600CW3G, BTA30H-800CW3G

2N6400. Thyristors. Surface Mount V > 2N6400. Description

PINNING - TO220AB PIN CONFIGURATION SYMBOL

MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description

TN3050H-12GY-TR. 30 A V automotive grade SCR Thyristor. Description. Features. Applications

BTA16-600BW3G, BTA16-800BW3G,

PD POW-R-BLOK TM Dual Diode Isolated Module 1000 Amperes / Up to 4000 Volts

BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G

Features. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.

BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description

PS POW-R-BLOK TM Single Diode Isolated Module 2500 Amperes / Up to 2400 Volts

PINNING - SOT82 PIN CONFIGURATION SYMBOL

T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description

TXN/TYN > TXN/TYN 1012

BTA25-600CW3G, BTA25-800CW3G

Teccor brand Thyristors 12 Amp Standard SCR. Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C

2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS

1800PT Series. Phase Control Thyristors (Hockey PUK Version), 1800A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.

Thyristor High Voltage, Phase Control SCR, 40 A

Description. Features. As low as 8mA max holding current. UL Recognized TO- 220AB package. 110 C rated junction temperature

UNISONIC TECHNOLOGIES CO., LTD

T1235T-8R. 12 A Snubberless Triac. Description. Features. Applications

CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Mar

China - Germany - Korea - Singapore - United States - smc-diodes.com

Thyristor / Diode (Super MAGN-A-PAK Power Modules), 570 A

T405Q A sensitivetriacs. Description. Features. Applications

Transcription:

The T9G0 SCR employs a Center Fired amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt conditions in phase control applications. FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Surge and I 2 t s ORDERING INFORMATION Select the complete 12 digit Part Number using the table below. EXAMPLE: T9G0122503DH is an 1200V-2500A SCR with 200ma IGT and 12 inch gate and cathode potential leads. PART Voltage Voltage Code Current V DRM -V RRM I tavg Tq I GT Current Code Turn-Off Gate Leads T9G0 600V 06 2500A 25 0 3 DH 800V 80 1000V 10 500us typ. 200ma 12" 1200V 12 APPLICATIONS: DC Power Supplies Plating Supplies Welding Supplies Revised: 1/7/2009 Page 1 of 6

Absolute Maximum s Characteristic Symbol Units Repetitive Peak Voltage V DRM -V RRM 1200 Volts Average On-State Current, T C =85 C I T(Avg.) 2500 A RMS On-State Current, T C =85 C I T(RMS) 3927 A Average On-State Current, T C =55 C I T(Avg.) 3100 A RMS On-State Current, T C =55 C I T(RMS) 4869 A Peak One Cycle Surge Current, 60Hz, V R =0V I TSM 27,200 A Peak One Cycle Surge Current, 50Hz, V R =0V I TSM 26,700 A Fuse Coordination I 2 t, 60Hz I 2 t 3.08E+06 A 2 s Fuse Coordination I 2 t, 50Hz I 2 t 3.56E+06 A 2 s Critical Rate-of-Rise of On-State Current di/dt 100 A/us Repetitive Critical Rate-of-Rise of On-State Current di/dt 200 A/us Non-Repetitive Critical Rate-of-Rise of Off-State Voltage dv/dt 400 V/us VD = ⅔ VDRM Peak Gate Power, 100us P GM 16 Watts Average Gate Power P G(avg) 5 Watts Operating Temperature Tj -40 to+150 C Storage Temperature T Stg. -50 to+150 C Approximate Weight 1 lb 0.45 Kg Mounting Force 5000-6000 lbs 22.2-26.7 Knewtons Information presented is correct to the knowledge and capabilities of the manufacturer. This information is subject to change without notice. The manufacturer makes no claim as to suitability for use, reliability, capability or future availability of this product. Page 2 of 6

Electrical Characteristics, Tj=25 C unless otherwise specified Characteristic Symbol Test Conditions min typ max Units Repetitive Peak Leakage Current I DRM /I RRM Tj=150 C, V DRM =Rated 150 ma Peak On-State Voltage V TM Tj=25 C, I TM =1500A 1.25 V V TM Model, Low Level V 0 Tj=150 C 0.848 V VTM = V O + r I TM r 15% I TM - π I TM 0.159 mω V TM Model, High Level V 0 Tj=150 C 1.153 V VTM = V O + r I TM r π I TM - I TSM 0.116 mω V TM Model, Hig4-Term A Tj=150 C 0.679 V TM = A + B Ln(I TM ) + B 15%I TM - I TSM -0.00257 C (I TM ) + D (I TM ) ½ C 8.34E-05 D 8.12E-03 Turn-On Delay Time t d V D = 0.5 V DRM 1.5 us Gate Drive: 40V - 20Ω Turn-Off Time tq Tj=150 C 500 us dv/dt = 20V/us to 80% V DRM Gate Trigger Current I GT Tj=25 C V D = 12V 30 90 200 ma Gate Trigger Voltage V GT 06 0.6 16 1.6 30 3.0 V Peak Reverse Gate Voltage V GRM 5 V Thermal Characteristics Characteristic Symbol Test Conditions max Units Thermal Resistance Junction to Case RΘ jc Double side cooled 0.015 C/Watt Case to Sink RΘ cs Double side cooled 0.006 C/Watt Thermal Impedance Model ZΘ jc Double side cooled ZΘ jc (t) = Σ(A(N) (1-exp(-t/Tau(N)))) where: N = 1 2 3 4 A(N) = 1.42E-03 2.98E-03 6.31E-03 4.28E-03 Tau(N) = 5.93E-05 2.78E-02 4.14E-01 2.14E+00 Page 3 of 6

Maximum On-State Voltage Drop 3.00 Tj = 150 C VTM (V) 2.00 1.00 0.00 100 1000 10000 ITM MAXIMUM TRANSIENT THERMAL IMPEDANCE 1.60E-02 Thermal Impedance ( C/Watt) 1.40E-02 1.20E-02 1.00E-02 8.00E-03 6.00E-03 4.00E-03 2.00E-03 0.00E+00 0.001 0.01 0.1 1 10 Time (sec) Page 4 of 6

Maximum On-State Power Dissipation Sinusoidal Waveform 7000 Pavg (Watts) 6000 5000 4000 3000 60 90 120 180 2000 1000 0 0 500 1000 1500 2000 2500 3000 3500 Maximum Allowable Case Temperature 150 Sinusoidal Waveform 130 Tc ( C) 110 90 70 50 60 90 120 180 0 500 1000 1500 2000 2500 3000 3500 Page 5 of 6

Maximum On-State Power Dissipation Square Waveform Pavg (Watts) 8000 7000 6000 5000 4000 3000 60 90 120 360 180 2000 1000 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 Maximum Allowable Case Temperature 150 Square Waveform 130 Tc ( C) 110 90 70 50 60 90 120 180 0 1000 2000 3000 4000 5000 360 Page 6 of 6