1-Line, Bi-directional, Ultra-low Capacitance Transient Voltage Suppressors http//:www.willsemi.com Descriptions The is an ultra-low capacitance TVS (Transient Voltage Suppressor) designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The incorporates one pair of ultra-low capacitance steering diodes plus a TVS diode. The may be used to provide ESD protection up to ±2kV (contact discharge) according to IEC6-4-2, and withstand peak pulse current up to 4A (8/2μs) according to IEC6-4-5. The is available in WBFBP-2C-C package. Standard products are Pb-free and Halogen-free. WBFBP-2C-C (Bottom View) Pin configuration Features Stand-off voltage: 5V Max Transient protection for each line according to IEC6-4-2 (ESD): ±2kV (contact discharge) IEC6-4-5 (surge): 4 A (8/2μs) Ultra-low capacitance: C J =.25pF typ. Ultra-low leakage current: I R < 1nA typ. Low clamping voltage: V CL = 22V typ. @ I PP = 16A (TLP) Solid-state silicon technology Applications USB 2. and USB 3. HDMI 1.3 and HDMI 1.4 SATA and esata DVI IEEE 1394 PCI Express Portable Electronics Notebooks 8 = Device code * = Month code (A~Z) Marking (Top View) Order information Device Package Shipping -2/TR WBFBP-2C-C /Tape&Reel Will Semiconductor Ltd. 1 Revision 1.1, 218/4/23
Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (t p = 8/2μs) P pk 72 W Peak pulse current (t p = 8/2μs) I PP 4 A ESD according to IEC6-4-2 air discharge V ESD ESD according to IEC6-4-2 contact discharge ±2 Junction temperature T J 125 Operating temperature T OP -4~85 Lead temperature T L 26 Storage temperature T STG -55~15 ±2 kv Electrical characteristics (T A =25, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage V RWM 5. V Reverse leakage current I R V RWM = 5V <1 na Reverse breakdown voltage V BR I T = 1mA 7.5 9.. V Clamping voltage 1) V CL I PP = 16A, t p = ns 22 V Dynamic resistance 1) R DYN.7 Ω Clamping voltage 2) V CL V ESD = 8kV 22 V Clamping voltage 3) V CL I PP = 1A, t p = 8/2μs 13 V I PP = 4A, t p = 8/2μs 18 V Junction capacitance C J V R = V, f = 1MHz.25.4 pf Notes: 1) TLP parameter: Z = 5Ω, t p = ns, t r = 2ns, averaging window from 6ns to 8ns. R DYN is calculated from 4A to 16A. 2) Contact discharge mode, according to IEC6-4-2. 3) Non-repetitive current pulse, according to IEC6-4-5. Will Semiconductor Ltd. 2 Revision 1.1, 218/4/23
Typical characteristics (T A =25, unless otherwise noted) Peak pulse current (%) 9 5 T T 1 Front time: T 1 = 1.25 T = 8 s Time to half-value: T 2 = 2 s T 2 2 Time ( s) 8/2μs waveform per IEC6-4-5 Current (%) 9 3ns t r =.7~1ns Time (ns) 6ns Contact discharge current waveform per IEC6-4-2 t V C - Clamping voltage (V) 17 16 15 14 13 12 11 Pulse waveform: t p = 8/2μs.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 I PP - Peak pulse current (A) Clamping voltage vs. Peak pulse current C J - Junction capacitance (pf).28.26.24.22 f = 1MHz V AC = 5mV.2-5 -4-3 -2-1 1 2 3 4 5 V R - Reverse voltage (V) Capacitance vs. Reverse voltage Peak pulse power (W) % of Rated power 8 6 4 2 1 1 Pulse time ( s) Non-repetitive peak pulse power vs. Pulse time 25 5 75 125 15 T A - Ambient temperature ( ) Power derating vs. Ambient temperature Will Semiconductor Ltd. 3 Revision 1.1, 218/4/23
Typical characteristics (T A = 25, unless otherwise noted) V/div V/div 2ns/div ESD clamping (+8kV contact discharge per IEC6-4-2) 2ns/div ESD clamping (-8kV contact discharge per IEC6-4-2) TLP current (A) 24 2 16 12 8 Z = 5 t r = 2ns t p = ns 4-4 -8-12 -16-2 -24-3 -25-2 -15 - -5 5 15 2 25 3 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 4 Revision 1.1, 218/4/23
PACKAGE OUTLINE DIMENSIONS WBFBP-2C-C E D1 L2 L1 E1 b D e1 e TOP VIEW BOTTOM VIEW A1 A SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A.45.5.55 A1.1.5.9 D.95 1. 1.5 E.55.6.65 D1.39Ref E1.4.45.5 b.42ref e.58.63.68 e1.36ref L1.5Ref L2.27.32.37 Recommended land pattern (Unit: mm).26.52.15.55 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met..15.63 Will Semiconductor Ltd. 5 Revision 1.1, 218/4/23
TAPE AND REEL INFORMATION Reel Dimensions Tape Dimensions W RD P1 Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 User Direction of Feed Q3 Q4 Q3 Q4 RD Reel Dimension W Overall width of the carrier tape 1 7inch 13inch 8mm 12mm 16mm P1 Pin1 Pitch between successive cavity centers Pin1 Quadrant 2mm 4mm 8mm Q1 Q2 Q3 Q4 Will Semiconductor Ltd. 6 Revision 1.1, 218/4/23